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Rock‐Hyun Baek

Observed names: Baek, Rock-Hyun, R. -H. Baek, R. H. Baek, R.-H. Baek, R.H. Baek, Rock-Hyun Baek, Rockhyun Baek
ORCID: 0000-0002-6175-8101
Observed ORCID: 0000-0002-6175-8101
OpenAlex ID: A5056156000
Electrical characteristics of 20-nm junctionless Si nanowire transistors
2012 · Chan-Hoon Park, Myung-Dong Ko, et al. · Solid-State Electronics · 162
Systematic DC/AC Performance Benchmarking of Sub-7-nm Node FinFETs and Nanosheet FETs
2018 · Jun-Sik Yoon, Jinsu Jeong, et al. · IEEE Journal of the Electron Devices Society · 96
Multi-${V}_{\text{th}}$ Strategies of 7-nm node Nanosheet FETs With Limited Nanosheet Spacing
2018 · Jun-Sik Yoon, Jinsu Jeong, et al. · IEEE Journal of the Electron Devices Society · 73
Low-Temperature Performance of Nanoscale MOSFET for Deep-Space RF Applications
2008 · Seung-Ho Hong, Gil-Bok Choi, et al. · IEEE Electron Device Letters · 65
Device Design Guideline of 5-nm-Node FinFETs and Nanosheet FETs for Analog/RF Applications
2020 · Jun-Sik Yoon, Rock-Hyun Baek · IEEE Access · 64
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Reduction of Process Variations for Sub-5-nm Node Fin and Nanosheet FETs Using Novel Process Scheme
2020 · Jun-Sik Yoon, Seunghwan Lee, et al. · IEEE Transactions on Electron Devices · 47
Comprehensive Analysis of Source and Drain Recess Depth Variations on Silicon Nanosheet FETs for Sub 5-nm Node SoC Application
2020 · Jinsu Jeong, Jun-Sik Yoon, et al. · IEEE Access · 44
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Junction Design Strategy for Si Bulk FinFETs for System-on-Chip Applications Down to the 7-nm Node
2015 · Jun-Sik Yoon, Eui-Young Jeong, et al. · IEEE Electron Device Letters · 40
Origin of Incremental Step Pulse Programming (ISPP) slope degradation in charge trap nitride based multi-layer 3D NAND flash
2020 · Kihoon Nam, Chanyang Park, et al. · Solid-State Electronics · 39
Neural Approach for Modeling and Optimizing Si-MOSFET Manufacturing
2020 · Hyun-Chul Choi, Hyeok Yun, et al. · IEEE Access · 38
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Sensitivity of Source/Drain Critical Dimension Variations for Sub-5-nm Node Fin and Nanosheet FETs
2019 · Jun-Sik Yoon, Jinsu Jeong, et al. · IEEE Transactions on Electron Devices · 38
Bottom Oxide Bulk FinFETs Without Punch-Through-Stopper for Extending Toward 5-nm Node
2019 · Jun-Sik Yoon, Jinsu Jeong, et al. · IEEE Access · 38
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Improved Long-Term Responses of Au-Decorated Si Nanowire FET Sensor for NH3 Detection
2019 · Donghoon Kim, Chanoh Park, et al. · IEEE Sensors Journal · 37
Novel Trench Inner-Spacer Scheme to Eliminate Parasitic Bottom Transistors in Silicon Nanosheet FETs
2022 · Jinsu Jeong, Jun-Sik Yoon, et al. · IEEE Transactions on Electron Devices · 35
Metal Source-/Drain-Induced Performance Boosting of Sub-7-nm Node Nanosheet FETs
2019 · Jun-Sik Yoon, Jinsu Jeong, et al. · IEEE Transactions on Electron Devices · 35
Punch-Through-Stopper Free Nanosheet FETs With Crescent Inner-Spacer and Isolated Source/Drain
2019 · Jun-Sik Yoon, Jinsu Jeong, et al. · IEEE Access · 34
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Channel Thickness and Grain Size Engineering for Improvement of Variability and Performance in 3-D NAND Flash Memory
2022 · Kihoon Nam, Chanyang Park, et al. · IEEE Transactions on Electron Devices · 33
Optimization of nanosheet number and width of multi-stacked nanosheet FETs for sub-7-nm node system on chip applications
2019 · Jun-Sik Yoon, Jinsu Jeong, et al. · Japanese Journal of Applied Physics · 33
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Characteristics of the Series Resistance Extracted From Si Nanowire FETs Using the $Y$-Function Technique
2009 · Rock-Hyun Baek, Chang-Ki Baek, et al. · IEEE Transactions on Nanotechnology · 33
Digital/Analog Performance Optimization of Vertical Nanowire FETs Using Machine Learning
2021 · Jun-Sik Yoon, Seunghwan Lee, et al. · IEEE Access · 32
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Performance, Power, and Area of Standard Cells in Sub 3 nm Node Using Buried Power Rail
2022 · Jun-Sik Yoon, Jinsu Jeong, et al. · IEEE Transactions on Electron Devices · 30
Electrical Coupling Effect of Forksheet FET for Power, Performance, and Area Analysis
2022 · Junjong Lee, Jun-Sik Yoon, et al. · IEEE Transactions on Electron Devices · 27
Electron trapping and extraction kinetics on carrier diffusion in metal halide perovskite thin films
2019 · Gyeongho Kang, Jun-Sik Yoon, et al. · Journal of Materials Chemistry A · 26
Process-Induced Variations of 10-nm Node Bulk nFinFETs Considering Middle-of-Line Parasitics
2016 · Jun-Sik Yoon, Chang-Ki Baek, et al. · IEEE Transactions on Electron Devices · 25
Characterization and Modeling of 1/$f$ Noise in Si-nanowire FETs: Effects of Cylindrical Geometry and Different Processing of Oxides
2010 · Rock-Hyun Baek, Chang-Ki Baek, et al. · IEEE Transactions on Nanotechnology · 25
Works count: 179
Citation count: 1,829
H-index: 25
I10-index: 46
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