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Evgenia P. Valcheva

Observed names: E P Valcheva, E Valcheva, E. P. VALCHEVA, E. P. Valcheva, E. Valcheva, E.P. VALCHEVA, E.P. Valcheva, Evgenia Petrova Valcheva, Evgenia Valcheva, Evgeniya Valcheva, Valcheva, E.
ORCID: 0000-0001-6563-6286
Observed ORCID: 0000-0001-6563-6286
OpenAlex ID: A5057246282
Energy position of near-band-edge emission spectra of InN epitaxial layers with different doping levels
2004 · B. Arnaudov, T. Paskova, et al. · Physical Review B · 187
Large-scale synthesis of free-standing N-doped graphene using microwave plasma
2018 · N. Bundaleska, J. Henriques, et al. · Scientific Reports · 119
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Towards large-scale in free-standing graphene and N-graphene sheets
2017 · E. Tatarova, A. Dias, et al. · Scientific Reports · 104
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Properties of nonpolar a-plane GaN films grown by HVPE with AlN buffers
2005 · T. Paskova, V. Darakchieva, et al. · Journal of Crystal Growth · 71
Deformation potentials of the E1(TO) and E2 modes of InN
2004 · V. Darakchieva, P. P. Paskov, et al. · Applied Physics Letters · 54
InN dielectric function from the midinfrared to the ultraviolet range
2004 · A. Kasic, E. Valcheva, et al. · Physical Review B · 52
Bragg and Laue x-ray diffraction study of dislocations in thick hydride vapor phase epitaxy GaN films
2000 · V. Ratnikov, R. Kyutt, et al. · Journal of Applied Physics · 46
Phonon mode behavior in strained wurtzite AlN∕GaN superlattices
2005 · V. Darakchieva, E. Valcheva, et al. · Physical Review B · 43
Lattice parameters of GaN layers grown on a-plane sapphire: Effect of in-plane strain anisotropy
2003 · V. Darakchieva, P. P. Paskov, et al. · Applied Physics Letters · 41
Multilayer model for Hall effect data analysis of semiconductor structures with step-changed conductivity
2003 · B. Arnaudov, T. Paskova, et al. · Physical review. B, Condensed matter · 41
Optical and dielectric properties of dc magnetron sputtered AlN thin films correlated with deposition conditions
1999 · V Dimitrova, D Manova, et al. · Materials Science and Engineering B · 39
Prospects for microwave plasma synthesized N-graphene in secondary electron emission mitigation applications
2020 · N. Bundaleska, A. Dias, et al. · Scientific Reports · 34
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Defect and stress relaxation in HVPE-GaN films using high temperature reactively sputtered AlN buffer
2001 · T. Paskova, E. Valcheva, et al. · Journal of Crystal Growth · 33
Interface structure of hydride vapor phase epitaxial GaN grown with high-temperature reactively sputtered AlN buffer
2000 · E. Valcheva, T. Paskova, et al. · Applied Physics Letters · 33
Hydride vapor-phase epitaxial GaN thick films for quasi-substrate applications: Strain distribution and wafer bending
2004 · T. Paskova, V. Darakchieva, et al. · Journal of Electronic Materials · 24
Epitaxial growth and orientation of AlN thin films on Si(001) substrates deposited by reactive magnetron sputtering
2006 · E. Valcheva, J. Birch, et al. · Journal of Applied Physics · 23
Nanopipes and their relationship to the growth mode in thick HVPE-GaN layers
2003 · E Valcheva, T Paskova, et al. · Journal of Crystal Growth · 22
Infrared ellipsometry and Raman studies of hexagonal InN films: correlation between strain and vibrational properties
2004 · V. Darakchieva, P.P. Paskov, et al. · Superlattices and Microstructures · 18
Growth of GaN on a‐plane sapphire: in‐plane epitaxial relationships and lattice parameters
2003 · T. Paskova, V. Darakchieva, et al. · physica status solidi (b) · 18
Experimental study of the effect of local atomic ordering on the energy band gap of melt grown InGaAsN alloys
2017 · M Milanova, V Donchev, et al. · Semiconductor Science and Technology · 17
Raman Spectroscopic Study of As-Deposited and Exfoliated Defected Graphene Grown on (001) Si Substrates by CVD
2017 · T. I. Milenov, E. Valcheva, et al. · Journal of Spectroscopy · 17
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Polar and nonpolar GaN grown by HVPE: Preferable substrates for nitride-based emitting devices
2004 · T. Paskova, P. P. Paskov, et al. · physica status solidi (a) · 16
In vitro and in silico studies of radical scavenging activity of salicylaldehyde benzoylhydrazones
2021 · Nadya G. Hristova-Avakumova, Evgenia P. Valcheva, et al. · Journal of Molecular Structure · 15
Pulsed laser deposition of thin carbon films on SiO2/Si substrates
2019 · Teodor Milenov, Anna Dikovska, et al. · Applied Surface Science · 15
Elimination of nonuniformities in thick GaN films using metalorganic chemical vapor deposited GaN templates
2001 · E. Valcheva, T. Paskova, et al. · Journal of Applied Physics · 15
Works count: 138
Citation count: 1,517
H-index: 18
I10-index: 37
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