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Douglas W. Barlage
Observed names:
D W Barlage,
D. Barlage,
D. W. Barlage,
D.W. Barlage,
Douglas Barlage
Institution:
University of Alberta
Observed institutions:
Intel (United States),
North Carolina State University,
University of Alberta,
University of Illinois Urbana-Champaign,
Wright-Patterson Air Force Base,
University of Illinois System,
United States Air Force,
Wright Laboratory,
Wright Research and Development Center
show all 9
ORCID:
0000-0003-1734-1277
Observed ORCID:
0000-0003-1734-1277
OpenAlex ID:
A5057705376
30 nm physical gate length CMOS transistors with 1.0 ps n-MOS and 1.7 ps p-MOS gate delays
2002
·
R. Chau
, J. Kavalieros
, et al.
·
Technical digest - International Electron Devices Meeting/Technical digest
·
110
A 50 nm depleted-substrate CMOS transistor (DST)
2002
·
R. Chau
, J. Kavalieros
, et al.
·
Technical digest - International Electron Devices Meeting/Technical digest
·
99
Zinc oxide thin film transistors with Schottky source barriers
2012
·
Alex M. Ma
, Manisha Gupta
, et al.
·
Solid-State Electronics
·
65
Inversion MOS capacitance extraction for high-leakage dielectrics using a transmission line equivalent circuit
2000
·
D.W. Barlage
, J.T. O'Keeffe
, et al.
·
IEEE Electron Device Letters
·
52
High-frequency response of 100 nm integrated CMOS transistors with high-K gate dielectrics
2002
·
D. Barlage
, R. Arghavani
, et al.
·
Technical digest - International Electron Devices Meeting/Technical digest
·
47
High-speed InGaP/GaAs HBTs with a strained In/sub x/Ga/sub 1-x/As base
1996
·
D.A. Ahmari
, M.T. Fresina
, et al.
·
IEEE Electron Device Letters
·
43
Schottky Barrier Thin Film Transistors Using Solution-Processed n -ZnO
2012
·
Ahmad H. Adl
, Alex Ma
, et al.
·
ACS Applied Materials & Interfaces
·
33
Enhanced photo-collection in single BiFeO3 nanowire due to carrier separation from radial surface field
2015
·
K. Prashanthi
, P. Dhandharia
, et al.
·
Nano Energy
·
32
Planar microwave resonator with electrodeposited ZnO thin film for ultraviolet detection
2019
·
M Benlamri
, S Deif
, et al.
·
Semiconductor Science and Technology
·
27
PDF
Sustained hole inversion layer in a wide-bandgap metal-oxide semiconductor with enhanced tunnel current
2016
·
Gem Shoute
, Amir Afshar
, et al.
·
Nature Communications
·
26
PDF
High Breakdown Strength Schottky Diodes Made from Electrodeposited ZnO for Power Electronics Applications
2019
·
Mourad Benlamri
, Benjamin D. Wiltshire
, et al.
·
ACS Applied Electronic Materials
·
25
Electrical Comparison of ${\rm HfO}_{2}$ and ${\rm ZrO}_{2}$ Gate Dielectrics on GaN
2013
·
Kyle M. Bothe
, Peter A. von Hauff
, et al.
·
IEEE Transactions on Electron Devices
·
24
A Photogenerated Silicon Plasma Waveguide Switch and Variable Attenuator for Millimeter-Wave Applications
2021
·
Thomas R. Jones
, Alden Fisher
, et al.
·
IEEE Transactions on Microwave Theory and Techniques
·
23
Optimization of pulsed laser deposited ZnO thin-film growth parameters for thin-film transistors (TFT) application
2012
·
Manisha Gupta
, Fatema Rezwana Chowdhury
, et al.
·
Applied Physics A
·
22
Schottky barrier source-gated ZnO thin film transistors by low temperature atomic layer deposition
2013
·
Alex M. Ma
, Manisha Gupta
, et al.
·
Applied Physics Letters
·
20
Low phase noise Ka-band VCOs using InGaP/GaAs HBTs and coplanar waveguide
2002
·
M.S. Heins
, D.W. Barlage
, et al.
·
17
Transmission electron microscopy studies of regrown GaN Ohmic contacts on patterned substrates for metal oxide semiconductor field effect transistor applications
2007
·
Y. N. Saripalli
, L. Pei
, et al.
·
Applied Physics Letters
·
16
Thermal characterization of thermally-shunted heterojunction bipolar transistors
1996
·
J. Sewell
, L.L. Liou
, et al.
·
IEEE Electron Device Letters
·
16
Performance of Nanocrystal ZnO thin film Schottky Contacts on Cu by Atomic Layer Deposition
2016
·
Mei Shen
, Amir Afshar
, et al.
·
IEEE Transactions on Nanotechnology
·
15
Fractal Loop Inductors
2015
·
Gem Shoute
, Douglas W. Barlage
·
IEEE Transactions on Magnetics
·
15
ZrO2 on GaN metal oxide semiconductor capacitors via plasma assisted atomic layer deposition
2013
·
P. von Hauff
, A. Afshar
, et al.
·
Applied Physics Letters
·
15
Low phase noise Ka-band VCOs using InGaP/GaAs HBTs and coplanar waveguide
2002
·
M.S. Heins
, D.W. Barlage
, et al.
·
IEEE MTT-S International Microwave Symposium digest
·
15
Interfacial Contact Effects in Top Gated Zinc Oxide Thin Film Transistors Grown by Atomic Layer Deposition
2016
·
Alex M. Ma
, Mei Shen
, et al.
·
IEEE Transactions on Electron Devices
·
14
Design and fabrication of a 1 Gb/s OEIC receiver for fiber-optic data link applications
1996
·
Chian-Gauh Shih
, Wei-Heng Chang
, et al.
·
Journal of Lightwave Technology
·
14
Capacitance Modeling and Characterization of Planar MOSCAP Devices for Wideband-Gap Semiconductors With High-$\kappa$ Dielectrics
2012
·
Kyle M. Bothe
, Peter A. von Hauff
, et al.
·
IEEE Transactions on Electron Devices
·
13
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Works count:
83
Citation count:
1,006
H-index:
16
I10-index:
30
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