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Kadir Ejderha
Observed names:
Ejderha, Kadir,
K Ejderha,
K. Ejderha,
KADIR EJDERHA
Institution:
Bingöl University
Observed institutions:
Bingöl University,
Ağrı İbrahim Çeçen University,
Yıldız Technical University,
Istanbul Medeniyet University,
Atatürk University
ORCID:
0000-0001-6883-9580
Observed ORCID:
0000-0001-6883-9580
OpenAlex ID:
A5057917993
On temperature-dependent experimental I-V and C-V data of Ni/n-GaN Schottky contacts
2010
·
Nezir Yıldırım
, Kadir Ejderha
, et al.
·
Journal of Applied Physics
·
130
Capacitance–conductance–current–voltage characteristics of atomic layer deposited Au/Ti/Al2O3/n-GaAs MIS structures
2015
·
A. Turut
, A. Karabulut
, et al.
·
Materials Science in Semiconductor Processing
·
124
PDF
Capacitance–conductance characteristics of Au/Ti/Al2O3/n-GaAs structures with very thin Al2O3interfacial layer
2015
·
A Turut
, A Karabulut
, et al.
·
Materials Research Express
·
44
PDF
Examination by interfacial layer and inhomogeneous barrier height model of temperature-dependent I–V characteristics in Co/p-InP contacts
2009
·
K. Ejderha
, N. Yıldırım
, et al.
·
Journal of Alloys and Compounds
·
37
Influence of interface states on the temperature dependence and current–voltage characteristics of Ni/p-InP Schottky diodes
2010
·
K. Ejderha
, N. Yıldırım
, et al.
·
Superlattices and Microstructures
·
36
Dependence of characteristic diode parameters on sample temperature in Ni/epitaxy n-Si contacts
2011
·
K. Ejderha
, A. Zengin
, et al.
·
Materials Science in Semiconductor Processing
·
34
The electrical characterizations and illumination response of Co/N-type GaP junction device
2015
·
İkram Orak
, Kadir Ejderha
, et al.
·
Current Applied Physics
·
31
Temperature dependence of electrical parameters of the Cu/n-Si metal semiconductor Schottky structures
2020
·
Ömer Faruk Bakkaloğlu
, Kadir Ejderha
, et al.
·
Journal of Molecular Structure
·
28
Effect of temperature on the current (capacitance and conductance)–voltage characteristics of Ti/n-GaAs diode
2014
·
K. Ejderha
, S. Duman
, et al.
·
Journal of Applied Physics
·
28
The Characteristic Parameters of Ni/n-6H-SiC Devices Over a Wide Measurement Temperature Range
2016
·
Kadir Ejderha
, Abdulkerim Karabulut
, et al.
·
Silicon
·
24
The effect of annealing temperature on the electrical characterization of Co/n type GaP Schottky diode
2014
·
İ. Orak
, K. Ejderha
, et al.
·
Materials Research Bulletin
·
22
Determination of contact parameters of Ni/n-GaP Schottky contacts
2012
·
S. Duman
, K. Ejderha
, et al.
·
Microelectronics Reliability
·
20
Characterization of CuO/n-Si heterojunction solar cells produced by thermal evaporation
2018
·
Reşit Özmenteş
, Cabir Temirci
, et al.
·
Materials Science-Poland
·
19
Schottky barrier height modification in Au/n-type 6H–SiC structures by PbS interfacial layer
2010
·
Y. Gülen
, K. Ejderha
, et al.
·
Microelectronic Engineering
·
16
Dependence of Electrical Properties of Ni/n-GaP/Al Schottky Contacts on Measurement Temperature and Thermal Annealing
2021
·
Kadir Ejderha
, Abdulmecit Turut
·
Journal of Electronic Materials
·
15
The Effect of Thermal Annealing and Measurement Temperature on Interface State Density Distribution and Time Constant in Ni/n-GaP Rectifying Contacts
2018
·
K. Ejderha
, I. Orak
, et al.
·
Journal of Electronic Materials
·
15
Electrical and optical characteristics of Au/PbS/n-6H–SiC structures prepared by electrodeposition of PbS thin film on n-type 6H–SiC substrate
2010
·
Y. Gülen
, M. Alanyalıoğlu
, et al.
·
Journal of Alloys and Compounds
·
15
Investigation on Atomic Bonding Structure of Solution-Processed Indium-Zinc-Oxide Semiconductors According to Doped Indium Content and Its Effects on the Transistor Performance
2022
·
Dongwook Kim
, Hyeonju Lee
, et al.
·
Materials
·
13
PDF
Temperature-dependent current-voltage characteristics in thermally annealed ferromagnetic Co/n-GaN Schottky contacts
2014
·
Kadir Ejderha
, N. Yıldırm
, et al.
·
The European Physical Journal Applied Physics
·
11
Responses of Pt/n-InP Schottky diode to electron irradiation in different temperature conditions
2011
·
Atakan Akbay
, Hatun Korkut
, et al.
·
Journal of Radioanalytical and Nuclear Chemistry
·
10
PDF
Temperature dependence of interface state density distribution determined from conductance–frequency measurements in Ni/n-GaP/Al diode
2020
·
S. Duman
, K. Ejderha
, et al.
·
Journal of Materials Science Materials in Electronics
·
9
THE CHARACTERISTIC DIODE PARAMETERS IN Ti/p-InP CONTACTS PREPARED BY DC SPUTTERING AND EVAPORATION PROCESSES OVER A WIDE MEASUREMENT TEMPERATURE
2016
·
KADIR EJDERHA
, SEZAI ASUBAY
, et al.
·
Surface Review and Letters
·
9
Characteristic diode parameters in thermally annealed Ni/p-InP contacts
2016
·
A. Turut
, K. Ejderha
, et al.
·
Journal of Semiconductors
·
9
Temperature-dependent I-V characteristics in thermally annealed Co/p-InP contacts
2011
·
K. Ejderha
, N. Yıldırım
, et al.
·
The European Physical Journal Applied Physics
·
6
Investigation of Donor-like State Distributions in Solution-Processed IZO Thin-Film Transistor through Photocurrent Analysis
2023
·
Dongwook Kim
, Hyeonju Lee
, et al.
·
Nanomaterials
·
5
PDF
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Works count:
33
Citation count:
721
H-index:
15
I10-index:
20
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