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Author

Bozhou Cai

Observed institution: Kyushu University
ORCID: 0009-0005-8322-6033
Observed ORCID: 0009-0005-8322-6033
OpenAlex ID: A5058230435
A Model of Wafer Warpage for Trench Field‐Plate Power MOSFETs
2024 · Hiroaki Kato, Bozhou Cai, et al. · physica status solidi (a) · 4
Study on dislocation propagation in 300-mm Si wafer during a high thermal budget process
2025 · Jiuyang Yuan, Bozhou Cai, et al. · Materials Science in Semiconductor Processing · 3
A Warpage Prediction Model for Trench Field-Plate Power MOSFET in 300mm-Diameter Process
2025 · Hiroaki Kato, Bozhou Cai, et al. · IEEE Transactions on Semiconductor Manufacturing · 3
Study on stress in trench structures during silicon IGBTs process-oxidation
2024 · Bozhou Cai, Jiuyang Yuan, et al. · Japanese Journal of Applied Physics · 3
Dependence of Dislocation Density Distribution on Radial Temperature Gradient in 300MM Si Wafer During IGBT High Thermal Budget Process
2025 · Jiuyang Yuan, Bozhou Cai, et al. · IEEE Electron Devices Technology & Manufacturing Conference (EDTM) · 2
Study on Dislocation Propagation in Trench Structures during Silicon IGBTs Process-Oxidation
2025 · Bozhou Cai, Jiuyang Yuan, et al. · International Conference on Solid State Devices and Materials (SSDM) · 1
Quantitative Evaluation of the Impact of FZ-Si Wafer Deep-Level Defects on 3.3 kV Si-IGBT Characteristics
2026 · Bozhou Cai, Keiji Tagami, et al. · International Conference on Solid State Devices and Materials (SSDM)
Impact of Dislocations on Minority Carrier Lifetime in 300-mm Si Wafers During a High Thermal Budget Process
2025 · Jiuyang Yuan, Bozhou Cai, et al. · IEEE Journal of the Electron Devices Society
Wafer Warpage Modeling for Process Integration of Trench Field Plate Power MOSFETs
2023 · Hiroaki Kato, Bozhou Cai, et al. · International Conference on Solid State Devices and Materials (SSDM)
Study on Stress in Trench Structures during Silicon IGBTs Process – Oxidation
2023 · Bozhou Cai, Jiuyang Yuan, et al. · International Conference on Solid State Devices and Materials (SSDM)
Works count: 10
Citation count: 16
H-index: 3
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