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Alijon Razzokov

Observed names: A. Razzakov, A. Sh. Razzakov, A. Sh. Razzokov, A.S. Razzokov, A.Sh. Razzakov, A.Sh. Razzokov, Alijon RAZZOKOV, Alijon Shonazarovich RAZZOKOV, Alijon Shonazarovich Razzokov, Alozhon Sh. Razzokov, Razzokov, Alijon, А.Ш. Раззоков, Раззоков А Ш
ORCID: 0000-0002-2210-6207
Observed ORCID: 0000-0002-2210-6207
OpenAlex ID: A5058343144
Liquid-phase epitaxy of solid solutions (Ge2)1−x(ZnSe)x
2001 · A.S. Saidov, A.Sh. Razzakov, et al. · Materials Chemistry and Physics · 30
Investigation of the Crystallographic Perfection and Photoluminescence Spectrum of the Epitaxial Films of (Si2)1-x(GaP)x 0 ≤ x ≤ 1 Solid Solution, Grown on Si and GaP Substrates with the Crystallographic Orientation (111)
2021 · A. S. Saidov, D. V. Saparov, et al. · Advances in Condensed Matter Physics · 16
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Analysis of structure formation processes features in high-entropy alloys of Al-Co-Cr-Fe-Ni system during laser alloying
2022 · V.V. Girzhon, V.V. Yemelianchenko, et al. · Results in Materials · 9
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Features of liquid-phase epitaxy of new solid solutions of (GaAs)1−y−z(Ge2)y(ZnSe)z and their photoelectric properties
2022 · A. S. Saidov, D. V. Saparov, et al. · International Journal of Modern Physics B · 8
Growth and Morphological Study of Graded-Gap Si–Si1 – xGex–GaAs Structures
2022 · A. S. Saidov, A. Sh. Razzokov · Crystallography Reports · 7
Features of growing Si- and Si1-xGex-single-crystal films from solution-melt based on tin
2022 · A. Sh. Razzokov, A. S. Saidov, et al. · Journal of Physical Studies · 7
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Studies of the crystal structure of solid solutions (Sn2)1−x−y(GaAs)x(ZnSe)y, (GaAs)1−x(ZnSe)x grown from liquid phase
2023 · A.Sh. Razzokov, A.S. Saidov, et al. · Journal of Crystal Growth · 5
Obtaining Si-Si1-xGex-(Si1-xGex)1-z(Al1-yGayAs)z-Si1-xGex-(Si1-xGex)1-z(Al1-yGayAs)z Structures from a Tin Solution-Melt in a Single Technological Cycle
2022 · A.S. Saidov, A.Sh. Razzokov, et al. · Acta Physica Polonica A · 5
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Liquid phase epitaxy of Ge1−x Snx semiconductor films
2001 · A. S. Saidov, A. Sh. Razzakov, et al. · Technical Physics Letters · 5
Preparation and Morphological Studies of Epitaxial Layers of a Solid Solution Si1–xGex
2020 · Amin S. Saidov, Alozhon Sh. Razzokov · Siberian Journal of Physics · 4
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Liquid phase epitaxy of (GaAs)1−x (ZnSe)x solid solution layers from a lead-based solution melt
2001 · A. S. Saidov, A. Sh. Razzakov, et al. · Technical Physics Letters · 4
Оbtaining and Electrophysical Properties of (Ge2)1 – x(GaAs)x Solid Solutions
2025 · Alijon Razzokov, Amin Saidov, et al. · Semiconductors · 3
Morphological Studies of (Ge2)1-X(ZnSe)X Solid Solutions
2025 · A.Sh. Razzokov, A.S. Saidov, et al. · East European Journal of Physics · 2
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Thermodynamic determination of optimal conditions for growing Si1-xGex crystals from a tin solution on a silicon substrate
2022 · Alijon Shonazarovich RAZZOKOV, Khushnudbek Odilbekovich ESHCHANOV · Journal of Metals Materials and Minerals · 2
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Liquid phase epitaxy of (Sn2)1−x (InSb)x solid solution layers
2002 · A. S. Saidov, A. Sh. Razzakov, et al. · Technical Physics Letters · 2
The possibility of improving the structural perfection of the new heterojunctions GaAs-(Ge2)1− x (ZnSe)x, Ge-(Ge2)1−x (ZnSe)x, GaP-(Ge2)1−x (ZnSe)x, and Si-(Ge2)1−x (ZnSe)x
1998 · A. S. Saidov, É. A. Koshchanov, et al. · Technical Physics Letters · 2
Optimal Regime for Growth of Epitaxial Germanium Layers from the Liquid Phase Based on Thermodynamic Calculations
2022 · Alijon RAZZOKOV, Khushnudbek ESHCHANOV · International Journal of Thermodynamics · 1
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Growth of Ge1−x Snnx solid solutions from the liquid phase
2001 · A. Sh. Razzakov · Doklady Physics · 1
Structural Features of Epitaxial Solid Solution Films (Si2)1-X(GaN)X Grown on Si Substrates
2026 · A.S. Saidov, Sh.N. Usmonov, et al. · DOAJ (DOAJ: Directory of Open Access Journals)
Growth and structural study of (Si2)1-x(GaP)x solid solution
2026 · Amin Saidov, Alijon Razzokov, et al. · Journal of Materials Science Materials in Electronics
Growth and structural study of the solid solution Si1−xGex (0 < x < 1)
2026 · Alijon Shonazarovich Razzokov, Serhii Ivanovych Petrushenko, et al. · Journal of Crystal Growth
Formation of (Si2)1-x(GaP)x gradient composition solid solutions during growth from a tin solution-melt
2025 · A. Sh. Razzokov, V.V. Girzhon, et al. · Vacuum
Growing Perfect Single-Crystal Epitaxial Films of (Si2)1-x(GaN)x Solid Solutions on Si (111) Substrates from the Liquid Phase
2025 · A.S. Saidov, Sh.N. Usmonov, et al. · Acta Physica Polonica A
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STUDYING THE GROWTH MECHANISMS OF Si EPITAXIAL LAYERS FROM A LIMITED VOLUME OF Si-Sn SOLUTION USING THEORETICAL CALCULATIONS AND THE SEDIMENTATION METHOD
2025 · Alijon Razzokov, Khushnudbek Eshchanov, et al. · International Journal of Mathematics and Physics
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Growing Ge1-xSnx solid solutions on Ge, GaAs substrates
2025 · A.Sh. Razzokov, M.A. Shonazarova, et al. · Functional materials
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Works count: 38
Citation count: 113
H-index: 6
I10-index: 2
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