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Zachary J. Biegler

Observed names: Biegler, Zachary, Z. J. Biegler, Z.J. Biegler, Zach Biegler, Zachary Biegler
ORCID: 0000-0002-0749-2031
Observed ORCID: 0000-0002-0749-2031
OpenAlex ID: A5058638787
Vanadium dioxide phase change thin films produced by thermal oxidation of metallic vanadium
2020 · Pengfei Guo, Zach Biegler, et al. · Thin Solid Films · 37
Atomic layer etching (ALE) of III-nitrides
2023 · Wan Ying Ho, Yi Chao Chow, et al. · Applied Physics Letters · 21
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Over 1 kV Vertical GaN-on-GaN p-n Diodes With Low On-Resistance Using Ammonia Molecular Beam Epitaxy
2020 · Esmat Farzana, Jianfeng Wang, et al. · IEEE Electron Device Letters · 17
Investigation of strain and stoichiometry of epitaxial titanium nitride on sapphire
2020 · H.A. Smith, S. Elhamri, et al. · Thin Solid Films · 7
Impact of growth parameters on the background doping of GaN films grown by ammonia and plasma-assisted molecular beam epitaxy for high-voltage vertical power switches
2021 · Jianfeng Wang, Kelsey Fast Jorgensen, et al. · APL Materials · 6
Removal of Si impurities from GaN regrowth interfaces using XeF2
2025 · Z. J. Biegler, A. A. Allerman, et al. · Applied Physics Letters · 4
kV-class lateral NiOx/GaN superjunction diode via ammonia molecular beam epitaxy (NH3-MBE)
2026 · Yizheng Liu, Zachary J. Biegler, et al. · APL Electronic Devices · 1
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Lateral GaN Schottky Superjunction Diodes with Buried p-GAN by NH3-MBE - Supplemental Information
2026 · Biegler, Zachary, Ho, Wan Ying, et al. · AIP Publishing
Lateral GaN Schottky superjunction diodes with buried p-GaN by NH3-MBE
2026 · Z. J. Biegler, W. Y. Ho, et al. · APL Electronic Devices
Lateral GaN Schottky Superjunction Diodes with Buried p-GaN by NH3-MBE
2026 · Speck, James, Farzana, Esmat, et al. · AIP Publishing
Examination of doping limits in GaN:Mg layers for superjunction devices
2026 · Z. J. Biegler, J. S. Speck · Journal of Applied Physics
MBE Grown GaN P-N Diodes
2025 · Zachary J. Biegler, Esmat Farzana, et al. · ˜The œMaterials Research Society series
(Invited) Gallium Nitride for Vertical Power Devices: Improving Morphology and Unintentional Impurities for Better Devices
2023 · James S. Speck, Esmat Farzana, et al. · ECS Meeting Abstracts
(Invited) Vertical GaN Devices for High-Power Electronics
2021 · Esmat Farzana, Jianfeng Wang, et al. · ECS Meeting Abstracts
Effect of Scandium Nitride Film Orientation on Growth and Electrical Properties
2020 · Amber Reed, D. C. Look, et al. · Bulletin of the American Physical Society
Comparing Magnetron Sputtered ScN Films Grown on Sapphire (10-10) and (1-102) Substrates
2020 · Tobin C. Muratore, S. Elhamri, et al. · Bulletin of the American Physical Society
Growth, Optimization, and Characterization of Transition Metal Nitrides and Transition Metal Oxides for Electronic and Optical Applications
2019 · Zachary J. Biegler · OhioLink ETD Center (Ohio Library and Information Network)
Effects of Deposition Parameters on the Optical and Piezoelectric Properties of Aluminum Scandium Nitride
2018 · R.O. Adams, Hadley Smith, et al. · Bulletin of the American Physical Society
Works count: 18
Citation count: 93
H-index: 5
I10-index: 3
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