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Author

M.-C. Chen

Observed institution: National Taiwan University
ORCID: 0009-0000-0827-2922
Observed ORCID: 0009-0000-0827-2922
OpenAlex ID: A5058970340
Physical thickness 1.x nm ferroelectric HfZrOx negative capacitance FETs
2016 · M. H. Lee, S.-T. Fan, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 147
Prospects for ferroelectric HfZrOx FETs with experimentally CET=0.98nm, SSfor=42mV/dec, SSrev=28mV/dec, switch-off 0.2V, and hysteresis-free strategies
2015 · M. H. Lee, P.-G. Chen, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 134
Nano-scaled Ge FinFETs with low temperature ferroelectric HfZrOx on specific interfacial layers exhibiting 65% S.S. reduction and improved ION
2017 · C.-J. Su, Y.-T Tang, et al. · Symposium on VLSI Technology · 33
High performance complementary Ge peaking FinFETs by room temperature neutral beam oxidation for sub-7 nm technology node applications
2016 · Y.-J. Lee, T.-C. Hong, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 13
Negative capacitance FETs with steep switching by ferroelectric Hf-based oxide
2017 · M. H. Lee, P.-G. Chen, et al. · International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA) · 8
Works count: 5
Citation count: 335
H-index: 5
I10-index: 4
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