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Aleksandar Radisic

Observed names: A Radisic, A. Radisic
Institution: IMEC
ORCID: 0000-0002-6699-1615
Observed ORCID: 0000-0002-6699-1615
OpenAlex ID: A5059230990
Quantifying Electrochemical Nucleation and Growth of Nanoscale Clusters Using Real-Time Kinetic Data
2006 · Aleksandar Radisic, Philippe M. Vereecken, et al. · Nano Letters · 278
Island growth in electrodeposition
2011 · Lian Guo, Gerko Oskam, et al. · Journal of Physics D Applied Physics · 181
In Situ Study of the Growth Kinetics of Individual Island Electrodeposition of Copper
2006 · A. Radisic, F. M. Ross, et al. · The Journal of Physical Chemistry B · 178
The morphology and nucleation kinetics of copper islands during electrodeposition
2006 · A. Radisic, P.M. Vereecken, et al. · Surface Science · 134
Nucleation and Growth of Copper on TiN from Pyrophosphate Solution
2001 · Aleksandar Radisic, John G. Long, et al. · Journal of The Electrochemical Society · 121
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Modeling the Bottom-Up Filling of Through-Silicon vias Through Suppressor Adsorption/Desorption Mechanism
2013 · Liu Yang, Aleksandar Radisic, et al. · Journal of The Electrochemical Society · 84
Copper plating for 3D interconnects
2010 · A. Radisic, O. Lühn, et al. · Microelectronic Engineering · 84
Direct Copper Electrodeposition on TaN Barrier Layers
2003 · Aleksandar Radisic, Yang Cao, et al. · Journal of The Electrochemical Society · 75
Influence of Additives on Nucleation and Growth of Copper on n-Si(111) from Acidic Sulfate Solutions
2002 · Aleksandar Radisic, Alan C. West, et al. · Journal of The Electrochemical Society · 68
Electroless Cu deposition on atomic layer deposited Ru as novel seed formation process in through-Si vias
2013 · Fumihiro Inoue, Harold Philipsen, et al. · Electrochimica Acta · 56
Implementation of an industry compliant, 5×50μm, via-middle TSV technology on 300mm wafers
2011 · A. Redolfi, D. Velenis, et al. · IEEE Electronic Components and Technology Conference (ECTC) · 52
Changing Superfilling Mode for Copper Electrodeposition in Blind Holes from Differential Inhibition to Differential Acceleration
2009 · O. Lühn, A. Radisic, et al. · Electrochemical and Solid-State Letters · 51
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Stochastic Simulation of the Early Stages of Kinetically Limited Electrodeposition
2006 · Timothy O. Drews, Aleksandar Radisic, et al. · Journal of The Electrochemical Society · 47
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Influence of Oxide Thickness on Nucleation and Growth of Copper on Tantalum
2004 · Aleksandar Radisic, Gerko Oskam, et al. · Journal of The Electrochemical Society · 47
Growth Kinetics for Copper Deposition on Si(100) from Pyrophosphate Solution
2000 · Peter M. Hoffmann, Aleksandar Radisic, et al. · Journal of The Electrochemical Society · 46
Void-Free Filling of HAR TSVs Using a Wet Alkaline Cu Seed on CVD Co as a Replacement for PVD Cu Seed
2010 · S. Armini, Z. El-Mekki, et al. · Journal of The Electrochemical Society · 40
Fabrication of Complex Architectures Using Electrodeposition into Patterned Self-Assembled Monolayers
2006 · Noshir S. Pesika, A. Radisic, et al. · Nano Letters · 40
Electrodeposition of Copper on Oxidized Ruthenium
2006 · Lian Guo, Aleksandar Radisic, et al. · Journal of The Electrochemical Society · 40
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Stochastic Modeling of Polyethylene Glycol as a Suppressor in Copper Electroplating
2014 · Liu Yang, Aleksandar Radisic, et al. · Journal of The Electrochemical Society · 38
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Kinetic Monte Carlo Simulations of Nucleation and Growth in Electrodeposition
2005 · Lian Guo, Aleksandar Radisic, et al. · The Journal of Physical Chemistry B · 37
Monitoring the Superfilling of Blind Holes with Electrodeposited Copper
2010 · O. Lühn, A. Radisic, et al. · Journal of The Electrochemical Society · 32
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Wafer-scale Cu plating uniformity on thin Cu seed layers
2013 · Liu Yang, Tanya Atanasova, et al. · Electrochimica Acta · 30
The effect of cupric ion concentration on the nucleation and growth of copper on RuTa seeded substrates
2013 · M. Nagar, A. Radisic, et al. · Electrochimica Acta · 30
High aspect ratio via metallization for 3D integration using CVD TiN barrier and electrografted Cu seed
2008 · G. Druais, G. Dilliway, et al. · Microelectronic Engineering · 25
Impact of “terminal effect” on Cu electrochemical deposition: Filling capability for different metallization options
2010 · Silvia Armini, Zsolt Tokei, et al. · Microelectronic Engineering · 23
Works count: 95
Citation count: 2,103
H-index: 24
I10-index: 33
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