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I. Yu. Lovshenko

Observed names: I. Lovshenko, I.Yu. Lovshenko, Ivan Lovshenko
ORCID: 0000-0002-0007-2587
Observed ORCID: 0000-0002-0007-2587
OpenAlex ID: A5059291845
Technology and electric characteristics of the field-effect hall sensor based on SOI structure
2013 · L. N. Dolgyi, I. Yu. Lovshenko, et al. · Russian Microelectronics · 7
Gallium nitride high electron mobility transistor with an effective graphene-based heat removal system
2020 · V. S. Volcheck, I. Yu. Lovshenko, et al. · Doklady BGUIR · 6
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Heterojunction bipolar transistor with pnp structure in the gallium arsenide technology HBT-HEMT
2022 · I.Yu. Lovshenko, P.S. Kratovich, et al. · Problems of advanced micro- and nanoelectronic systems development · 3
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Modeling the impacts of heavy charged particles on electrical characteristics of n-MOSFET device structure
2020 · I. Yu. Lovshenko, V. R. Stempitsky, et al. · Doklady BGUIR · 2
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Calculation of Optical Parameters of Thin Films of Structural Materials of Thermal Uncooled Bolometric Type Detector
2023 · Van Trieu Tran, K. V. Korsak, et al. · Doklady BGUIR · 1
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Physic-topological (electrical) model of a junction field effect transistor, taking into account the degradation of operational characteristics under the influence of penetrating radiation
2019 · Ivan Lovshenko, Veranika Khanko, et al. · ITM Web of Conferences · 1
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Three-dimensional Magnetometer Based on Hall Sensors Integrated in Standard Cmos Technology
2019 · D. HA. Dao, V. S. Volchek, et al. · DOAJ (DOAJ: Directory of Open Access Journals) · 1
Investigation of the radiations effect on the electrical characteristics of a junction field-effect transistor
2017 · O. Dvornikov, I. Yu. Lovshenko, et al. · Репозиторий БГУИР (BSUIR Repository) · 1
Optimization of structural and technological parameters of the field effect Hall sensor
2015 · V. Volchek, I. Lovshenko, et al. · International Conference on Advanced Technologies for Communications · 1
Super-Junction Insulated-Gate Bipolar Transistor with a Vertical Channel Arrangement and a Shielded Floating Charge-Carrier Accumulation Layer
2026 · Thanh Nguyen Trong, I. Lovshenko, et al. · Doklady BGUIR
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ffect of Silicon Nitride and Silicon Dioxide Passivation Films on the Performance of Off-State Field-Plated AlGaN/GaN HEMT
2025 · V. Volcheck, I. Lovshenko, et al. · Doklady BGUIR
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Design Solutions for Device Structures of Bipolar Transistors with an Insulated Gate and a Vertical Channel Arrangement
2024 · Trong Thanh Nguyen, Dao Dinh Ha, et al. · Doklady BGUIR
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Circuit Modeling of the Impact of Heavy Charged Particles on Transient Processes in Bipolar Analog Microcircuits
2024 · O. V. Dvornikov, V. A. Tchekhovski, et al. · Doklady BGUIR
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ELECTRICAL CHARACTERIZATION OF GATE-ALL-AROUND FIELD-EFFECT TRANSISTOR WITH HZO AND HfO2 FERROELECTRICS
2024 · I.Yu. Lovshenko, V.S. Volcheck, et al. · All-Russian Youth Scientific Conference
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Addition to Compact Models of Gallium Arsenide Device Structures Taking Into Account the Change (degradation) of Operational Characteristics Under Radiation Exposure
2024 · I.Yu. Lovshenko, K.V. Korsak, et al. · All-Russian Youth Scientific Conference
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Optical, Mechanical and Electrical Characteristics of Thermal Uncooled Bolometric Type Detector Based on Vanadium Oxide
2024 · Van Trieu Tran, K. V. Korsak, et al. · Doklady BGUIR
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Design and Performance of Amorphous Silicon Based on Uncooled Bolometer-Type Infrared Focal Plane Arrays
2023 · Van Trieu Tran, V. R. Stempitsky, et al. · Doklady BGUIR
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Application of Cad Systems to Accounting for Mechanical Stresses in the Development of Uncooled Thermal Detectors of the Bolometric Type
2023 · Tran Van Trieu, I. Yu. Lovshenko, et al. · Digital Transformation
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The proton flux influence on electrical characteristics of a dual-channel hemt based on GaAs
2022 · I. Yu. Lovshenko, A. Yu. Voronov, et al. · Doklady BGUIR
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Computer simulation of the operational characteristics of a microstrip silicon detector
2021 · Ha Dinh Dao, Ivan Lovshenko, et al. · Semiconductor Science and Technology
Simulation of the Heavy Charged Particle Impacts on Electrical Characteristics of N-MOSFET Device Structure
2019 · Dao Dinh Ha, Tran Tuan Trung, et al. · International Conference on Advanced Technologies for Communications
Insulated-gate Bipolar Transistor Formed in the Bulk Silicon and Using «silicon on Insulator» Technology
2019 · S. Ibrahim, I. Yu. Lovshenko, et al. · DOAJ (DOAJ: Directory of Open Access Journals)
Construction and Technological Characteristicsof Wide Bandgap Semiconductors Sensors
2019 · V. S. Volchek, D. HA. Dao, et al. · DOAJ (DOAJ: Directory of Open Access Journals)
27 Technology and Device Nanoscale Mosfets Simulation
2019 · T. T. Trung, A. M. Borovik, et al. · DOAJ (DOAJ: Directory of Open Access Journals)
Optimization of structural and technological parameters of junction field-effect transistor with increased radiation hardness
2017 · O. Dvornikov, I. Yu. Lovshenko, et al. · Репозиторий БГУИР (BSUIR Repository)
Works count: 28
Citation count: 23
H-index: 3
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