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In-Hwan Ji

Observed names: Byung-Chul Jeon In-Hwan Ji, In-hwan Ji, Inhwan Ji, In‐hwan Ji, 지인환
Observed institutions: North Carolina State University, Seoul National University, Samsung (South Korea), Wolfspeed, Inc. (United States), Microsemi (United States), Samsung Display (South Korea), Littelfuse (United States)
ORCID: 0009-0004-6797-9062
Observed ORCID: 0009-0004-6797-9062
OpenAlex ID: A5059581885
51.1: Novel Simultaneous Emission Driving Scheme for Crosstalk‐free 3D AMOLED TV
2010 · Baek‐woon Lee, In‐hwan Ji, et al. · SID Symposium Digest of Technical Papers · 45
New Power MOSFET Employing Segmented Trench Body Contact for Improving the Avalanche Energy
2008 · In-Hwan Ji, Kyu-Heon Cho, et al. · IEEE International Symposium on Power Semiconductor Devices and ICs/Proceedings of the International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices and ICs · 19
The first demonstration of symmetric blocking SiC gate turn-off (GTO) thyristor
2015 · Woongje Sung, Alex Q. Huang, et al. · IEEE International Symposium on Power Semiconductor Devices and ICs/Proceedings of the International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices and ICs · 15
Temperature dependence of avalanche breakdown in 4H-SiC devices
2023 · Philipp Steinmann, Brett Hull, et al. · Journal of Applied Physics · 11
Highly rugged 1200 V 80 mQ 4-H SiC power MOSFET
2017 · In-Hwan Ji, Amaury Gendron-Hansen, et al. · IEEE International Symposium on Power Semiconductor Devices and ICs/Proceedings of the International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices and ICs · 10
SiC Power MOSFETs: Designing for Reliability in Wide-Bandgap Semiconductors
2019 · Kevin Matocha, In-Hwan Ji, et al. · IEEE International Reliability Physics Symposium proceedings · 9
High Temperature and High Humidity Reliability Evaluation of Large-Area 1200V and 1700V SiC Diodes
2023 · In-Hwan Ji, Anoop Mathew, et al. · IEEE International Reliability Physics Symposium proceedings · 7
Design and fabrication of high current AlGaN/GaN HFET for Gen III solid state transformer
2014 · In-Hwan Ji, Sizhen Wang, et al. · IEEE Workshop on Wide Bandgap Power Devices and Applications · 7
15.3: Smart Power‐Saving Driving Scheme for AMOLEDs Using Dynamic Power Rail Control
2011 · Sang‐Myeon Han, Baek‐woon Lee, et al. · SID Symposium Digest of Technical Papers · 5
A New Soft Self-Clamping Scheme for Improving the Self-Clamped Inductive Switching (SCIS) Capability of Automotive Ignition IGBT
2007 · In-Hwan Ji, Kyu-Heon Cho, et al. · IEEE International Symposium on Power Semiconductor Devices and ICs/Proceedings of the International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices and ICs · 5
The Geometry Effect of A Counter-Doped Lateral Body Terminal on Poly-Si TFTs
2006 · Sang-Myeon Han, In-Hwan Ji, et al. · ECS Transactions · 4
21.1: Distinguished Paper : 120 Hz 3D Driving for AMOLED with Interleaved Scan and Emission Operation
2011 · Baek‐woon Lee, Sang‐Myeon Han, et al. · SID Symposium Digest of Technical Papers · 3
The Optimized Monolithic Fault Protection Circuit for the Soft-shutdown behavior of 600V PT-IGBT by employing a New Blanking Filter
2006 · In-Hwan Ji, Young-Hwan Choi, et al. · IEEE International Symposium on Power Semiconductor Devices and ICs/Proceedings of the International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices and ICs · 3
A New Fault Protection Circuit of 600V PT-IGBT for the Improved Avalanche Energy Employing the Floating p-well
2005 · Byung-Chul Jeon In-Hwan Ji · IEEE International Symposium on Power Semiconductor Devices and ICs/Proceedings of the International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices and ICs · 3
A new protection circuit for high-voltage current saturation of LEST
2005 · Byung-Chul Jeon, In-Hwan Ji, et al. · IEEE Electron Device Letters · 3
Channel modulated AlGaN/GaN HEMTs employing fluoride plasma treatment
2008 · Kyu-Heon Cho, Young-Hwan Choi, et al. · IEEE Power Electronics Specialists Conference (PESC) · 2
Experimental Study on Improving Unclamped Inductive Switching Characteristics of the New Power Metal Oxide Semiconductor Field Effect Transistor Employing Deep Body Contact
2006 · In-Hwan Ji, Young-Hwan Choi, et al. · Japanese Journal of Applied Physics · 2
An Improved Junction Termination Design Employing Shallow Trenches and Field Limiting Rings for Power Devices
2006 · Min-Woo Ha, Seung-Chul Lee, et al. · Japanese Journal of Applied Physics · 2
PDF
Erratum: “Temperature dependence of avalanche breakdown in 4H-SiC devices” [J. Appl. Phys. 133, 235705 (2023)]
2023 · Philipp Steinmann, Brett Hull, et al. · Journal of Applied Physics · 1
PDF
SiC MOSFET Body Diode Qualification Testing Platform with Repetitive Switching Current Stressing
2020 · Gin Sheh, Xuning Zhang, et al. · PCIM Europe digital days 2020; International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management · 1
A new AlGaN/GaN power HFET employing partial deep trench drain structure for high voltage application
2015 · In-Hwan Ji, Bongmook Lee, et al. · IEEE Workshop on Wide Bandgap Power Devices and Applications · 1
High voltage AlGaN/GaN HFET employing low taper angle field-plate for stable forward blocking capability
2014 · In-Hwan Ji, Bongmook Lee, et al. · IEEE International Symposium on Power Semiconductor Devices and ICs/Proceedings of the International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices and ICs · 1
AlGaN/GaN high-electron-mobility transistor(HEMT) employing Schottky contact on the unetched region and the silicon dioxide passivation
2008 · Young-Hwan Choi, Sun-Jae Kim, et al. · IEEE Power Electronics Specialists Conference (PESC) · 1
High Breakdown Voltage AlGaN/GaN HEMTs by Employing Proton Implantation
2008 · Kyu-Heon Cho, In-Hwan Ji, et al. · IEEE International Symposium on Power Semiconductor Devices and ICs/Proceedings of the International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices and ICs · 1
A new fault current-sensing scheme for fast fault protection of the insulated gate bipolar transistor
2008 · In-Hwan Ji, Min-Woo Ha, et al. · Microelectronics Journal · 1
Works count: 54
Citation count: 167
H-index: 7
I10-index: 5
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