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Nobuo Toyokura
Observed names:
N Toyokura,
N. TOYOKURA,
N. Toyokura
Observed institution:
Fujitsu (Japan)
OpenAlex ID:
A5060213721
Breakdown in silicon oxides—correlation with Cu precipitates
1984
·
Kouichirou Honda
, Akira Ohsawa
, et al.
·
Applied Physics Letters
·
106
Breakdown in silicon oxides (II)—correlation with Fe precipitates
1985
·
Kouichirou Honda
, Akira Ohsawa
, et al.
·
Applied Physics Letters
·
60
Catastrophic breakdown in silicon oxides: The effect of Fe impurities at the SiO2-Si interface
1987
·
Kouichirou Honda
, Toshirou Nakanishi
, et al.
·
Journal of Applied Physics
·
58
Metal Impurities near the SiO2 ‐ Si Interface
1984
·
Akira Ohsawa
, Kouichirou Honda
, et al.
·
Journal of The Electrochemical Society
·
55
PDF
Properties of Molybdenum Silicide Film Deposited by Chemical Vapor Deposition
1983
·
S. Inoue
, N. Toyokura
, et al.
·
Journal of The Electrochemical Society
·
44
PDF
Phosphorus‐Doped Molybdenum Silicide Films for LSI Applications
1981
·
S. Inoue
, N. Toyokura
, et al.
·
Journal of The Electrochemical Society
·
20
Silicon surface roughness—Structural observation by reflection electron microscopy
1986
·
Kouichirou Honda
, Akira Ohsawa
, et al.
·
Applied Physics Letters
·
14
Instrument measuring temperature dependence of minority-carrier lifetime without contact
1983
·
Akira Ohsawa
, Kouichirou Honda
, et al.
·
Review of Scientific Instruments
·
10
Determination of trace elements in a silicon single crystal
1997
·
T. Takeuchi
, Y. Nakano
, et al.
·
Journal of Radioanalytical and Nuclear Chemistry
·
7
An Mo gate 4K static MOS RAM
1980
·
H. Ishikawa
, M. Yamamoto
, et al.
·
IEEE Transactions on Electron Devices
·
7
Determination of trace element in a silicon single crystal
1993
·
T. Takeuchi
, Y. Nakano
, et al.
·
Journal of Radioanalytical and Nuclear Chemistry
·
5
Electrically alterable read-only memory cell with graded energy band-gap insulator
1980
·
S. Hijiya
, T. Ito
, et al.
·
Technical digest - International Electron Devices Meeting/Technical digest
·
5
Donor-related microdefects at surface of denuded zone in Czochralski-grown silicon
1983
·
Ritsuo Takizawa
, Akira Ohsawa
, et al.
·
Applied Physics Letters
·
3
An Mo gate 4K static MOS RAM
1979
·
H. Ishikawa
, M. Yamamoto
, et al.
·
Technical digest - International Electron Devices Meeting/Technical digest
·
3
Metal impurities at the SiO2–Si interface
2020
·
K Honda
, T Nakanishi
, et al.
·
CRC Press eBooks
·
1
An Mo Gate 4K Static MOS RAM
1980
·
H. Ishikawa
, M. Yamamoto
, et al.
·
IEEE Journal of Solid-State Circuits
·
1
Phosphorus doped molybdenum silicide technology for LSI applications
1980
·
S. Inoue
, N. Toyokura
, et al.
·
Technical digest - International Electron Devices Meeting/Technical digest
·
1
A design of the combinatorial molecular layer epitaxy system and its application to the fabrication of halide perovskite films
2016
·
Kazuhiro Kawashima
, Yuji Okamoto
, et al.
·
The Japan Society of Applied Physics
ChemInform Abstract: PROPERTIES OF MOLYBDENUM SILICIDE FILM DEPOSITED BY CHEMICAL VAPOR DEPOSITION
1983
·
S. INOUE
, N. TOYOKURA
, et al.
·
ChemInform
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Works count:
19
Citation count:
400
H-index:
8
I10-index:
8
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