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Hocine Ait-Kaci

Observed names: Ait-Kaci, Hocine, Aït-Kaci, H., H AÏT KACI, H Aït-Kaci, H. Ait Kaci, H. Ait-Kaci, H. Ait-kaci, H. Aït-Kaci, H. Aït-Kaci, H. Aït-kaci, H. Aït‐Kaci, Hocine AIT-KACI, Hocine Aït-Kaci, Hocine Aït-kaci, Hocine Aït‐Kaci
Observed institutions: Centre National de la Recherche Scientifique, Université Oran 1 Ahmed Ben Bella, Université de Montpellier, Université des Sciences et de la Technologie d'Oran Mohamed Boudiaf, Institut d'Électronique et des Systèmes, Laboratoire de Physique des Plasmas, Université Montpellier 2
OpenAlex ID: A5060327491
Wet etching and chemical polishing of InAs/GaSb superlattice photodiodes
2009 · R Chaghi, C Cervera, et al. · Semiconductor Science and Technology · 71
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Unambiguous determination of carrier concentration and mobility for InAs/GaSb superlattice photodiode optimization
2009 · C. Cervera, J. B. Rodriguez, et al. · Journal of Applied Physics · 54
Characterization of midwave infrared InAs/GaSb superlattice photodiode
2009 · C. Cervera, J. B. Rodriguez, et al. · Journal of Applied Physics · 41
Effect of incorporating p-type hydrogenated nanocrystalline silicon buffer layer on amorphous silicon n–i–p solar cell performances
2012 · A. Belfar, H. Aït-Kaci · Thin Solid Films · 25
Temperature dependence performances of InAs/GaSb superlattice photodiode
2010 · C. Cervera, K. Jaworowicz, et al. · Infrared Physics & Technology · 24
Optimization of InAsSb photodetector for non‐cryogenic operation in the mid‐infrared range
2005 · H. Aït‐Kaci, J. Nieto, et al. · physica status solidi (a) · 17
InSb photodetectors with PIN and nBn designs
2013 · A. Evirgen, J. Abautret, et al. · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · 14
Electrical properties of short period InAs/GaSb superlattice
2007 · P. Christol, L. Konczewicz, et al. · Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics · 14
Electronic properties of InAs/GaSb superlattice detectors to evaluate high-temperature operation
2010 · P. Christol, C. Cervera, et al. · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · 12
Band Discontinuities of Perfectly Lattice-Matched GaSb(n)/GaAlAsSb(p)/GaSb(p) Double Heterojunction
1997 · H. Ait Kaci, D. Boukredimi, et al. · physica status solidi (a) · 12
Role of metallic contacts and defects on performances of an antimonide based thermo-photovoltaic cell: A numerical analysis
2022 · Arbia Cheriet, Mohamed Mebarki, et al. · Solar Energy · 8
ITO/p+nc-Si:H contact barrier effects on n-i-p′-p silicon solar cell performances
2013 · A. Belfar, H. Aït-kaci · Materials Science and Engineering B · 8
Effect of pressure on electrical properties of short period InAs/GaSb superlattice
2008 · Leszek Konczewicz, Sylvie Contreras, et al. · physica status solidi (b) · 7
Analysis of the GaSb-p+/GaSb-p/GaSb-n+/GaSb-n structure performances at room temperature, for thermo-photovoltaic applications
2018 · F.Z. Meharrar, A. Belfar, et al. · Optik · 6
Back reflection and temperature effects on n-i-p-p+ amorphous and nanocrystalline silicon based solar cells performances
2016 · Abbas Belfar, Hocine Aït-Kaci · Optik · 6
Optimization of Band Gap and Thickness for the Development of Efficient n-i-p+ Solar Cell
2015 · Abbas Belfar, B. Amiri, et al. · Electronic Sumy State University Institutional Repository (Sumy State University) · 6
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The benefit of using p-a-SiOxCy:H as double window layers in hydrogenated amorphous silicon solar cells: Correlation of simulation and experiment
2021 · W. Hadj Kouider, A. Belfar, et al. · Optik · 5
Window Layer Thickness Effect on Amorphous Silicon Oxide Solar Cell Performances
2020 · Wafa HADJ KOUIDER, Abbas BELFAR, et al. · Algerian Journal of Renewable Energy and Sustainable Development · 5
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High sensitivity 2.5 μm photodiodes with metastable GaInAsSb absorbing layer
1996 · M. Mébarki, H. Ait-Kaci, et al. · Solid-State Electronics · 5
Energy band diagram and energy band offsets of Ga 0.6 Al 0.4 As 0.034 Sb 0.966 (p)/Ga 0.6 Al 0.4 As 0.034 Sb 0.966 (n)/InAs 0.9 Sb 0.1 double interface determined by capacitance-voltage measurements
2017 · A. Cheriet, M. Mebarki, et al. · Materials Science in Semiconductor Processing · 4
Carrier Concentration Control of GaSb/GaInAsSb System
2007 · J.-L. Lazzari, F. De Anda, et al. · AIP conference proceedings · 4
Current-Voltage Characteristic and Schottky Barrier Height of the GaAlAsSb(p)/GaSb(n+) Heterostructure
2001 · H. Ait Kaci, D. Boukredimi, et al. · physica status solidi (a) · 4
A survey of new laser and detector structures for 3-5 μm midinfrared spectral range
2004 · Andre F. Joullie, Philippe Christol, et al. · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · 3
Extraction of Diode’s Electrical Parameters under Forward and Room Temperature Conditions in an InAsSb Based Device
2019 · Laboratoire de Physique des Plasmas, 31000 Oran, Algerie, K. Mahi, et al. · Journal of Nano- and Electronic Physics · 2
Numerical simulation of barrier height effect on output parameters, for a a-Si:H/nc-Si:H based solar cell
2013 · A. Belfar, H. Aït-Kaci · EPJ Web of Conferences · 2
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Works count: 53
Citation count: 367
H-index: 10
I10-index: 10
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