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Mingsheng Fang
Observed name:
Fang, Mingsheng
Institution:
Hubei Jiufengshan Laboratory
Observed institutions:
Beijing Academy of Quantum Information Sciences,
PLA Academy of Military Science,
State Key Laboratory of Digital Manufacturing Equipment and Technology,
Hubei Jiufengshan Laboratory,
Huazhong University of Science and Technology
ORCID:
0000-0002-5284-8789
Observed ORCID:
0000-0002-5284-8789
OpenAlex ID:
A5060350114
Layer‐Dependent Dielectric Function of Wafer‐Scale 2D MoS 2
2018
·
Baokun Song
, Honggang Gu
, et al.
·
Advanced Optical Materials
·
107
Layer-dependent dielectric and optical properties of centimeter-scale 2D WSe 2 : evolution from a single layer to few layers
2019
·
Honggang Gu
, Baokun Song
, et al.
·
Nanoscale
·
82
PDF
Complex Optical Conductivity of Two-Dimensional MoS2: A Striking Layer Dependency
2019
·
Baokun Song
, Honggang Gu
, et al.
·
The Journal of Physical Chemistry Letters
·
54
Layer-dependent dielectric permittivity of topological insulator Bi2Se3 thin films
2019
·
Mingsheng Fang
, Zhenyu Wang
, et al.
·
Applied Surface Science
·
52
Complete Dielectric Tensor and Giant Optical Anisotropy in Quasi-One-Dimensional ZrTe5
2021
·
Zhengfeng Guo
, Honggang Gu
, et al.
·
ACS Materials Letters
·
46
Temperature and thickness dependent dielectric functions of MoTe2 thin films investigated by spectroscopic ellipsometry
2022
·
Mingsheng Fang
, Honggang Gu
, et al.
·
Applied Surface Science
·
28
An analytical method to determine the complex refractive index of an ultra-thin film by ellipsometry
2019
·
Honggang Gu
, Simin Zhu
, et al.
·
Applied Surface Science
·
27
Giant in-plane optical and electronic anisotropy of tellurene: a quantitative exploration
2022
·
Zhengfeng Guo
, Honggang Gu
, et al.
·
Nanoscale
·
26
2D Niobium-Doped MoS2: Tuning the Exciton Transitions and Potential Applications
2021
·
Baokun Song
, Honggang Gu
, et al.
·
ACS Applied Electronic Materials
·
25
PDF
Complex optical conductivity of Bi2Se3 thin film: Approaching two-dimensional limit
2021
·
Mingsheng Fang
, Zhenyu Wang
, et al.
·
Applied Physics Letters
·
18
PDF
Substrate-tuned dielectric screening effect on optical properties of monolayer MoSe2
2023
·
Liusheng Huang
, Honggang Gu
, et al.
·
Applied Surface Science
·
15
Thickness and Layer Stacking Order Effects on Complex Optical Conductivity and Exciton Strength of Few-Layer Graphene: Implications for Optical Modulators and Photodetectors
2022
·
Mingsheng Fang
, Honggang Gu
, et al.
·
ACS Applied Nano Materials
·
12
Investigations of Optical Functions and Optical Transitions of 2D Semiconductors by Spectroscopic Ellipsometry and DFT
2023
·
Honggang Gu
, Mingsheng Fang
, et al.
·
Nanomaterials
·
10
PDF
Thickness Scaling Effects on the Complex Optical Conductivity of Few‐Layer WSe2 Investigated by Spectroscopic Ellipsometry
2022
·
Mingsheng Fang
, Honggang Gu
, et al.
·
Advanced Photonics Research
·
6
PDF
Characterization of Interface Properties of 4 H-SiC (0001) MOS Structures Grown by Dry Oxygen Oxidation and NO Annealing
2025
·
Mingsheng Fang
, Ruolan Wang
, et al.
·
IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)
·
1
Interfacial Engineering of SiC/Si Heterostructures via Surface-Activated Direct Bonding: Crystallographic Orientation Effects and Stress Mitigation Strategies
2026
·
Xiao Qin
, Jieqiong Zhang
, et al.
·
ACS Applied Electronic Materials
Comparison band offsets between SiO 2 /3C-SiC and SiO 2 /4H-SiC heterojunctions by x-ray photoelectron spectroscopy
2026
·
Huaping Song
, Chenyu Liang
, et al.
·
Journal of Physics D Applied Physics
PDF
Dopant Analysis of SiC EPI Structure with Electrical Atomic Force Microscopy
2025
·
Yan Liu
, Ting Zhang
, et al.
·
IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)
Investigating Local Residual Stress and Dopant Homogeneity in 4H-SiC MOSFETs: A Failure Analysis Approach
2025
·
Ruolan Wang
, Mingsheng Fang
, et al.
·
IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)
Anatomy of internal electric field profile in operating SiC power MOSFETs with local contact potential probing
2025
·
Mingsheng Fang
, Yan Liu
, et al.
·
Applied Physics Letters
Insights into Overcurrent-Induced Gate Breakdown and Failure Analysis of 1200 V SiC MOSFETs
2024
·
Ruolan Wang
, Mingsheng Fang
, et al.
·
IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)
Characterization, Analysis, and Failure Investigation of SiC Materials and Power Devices
2023
·
Yupu Wang
, Dandan Wang
, et al.
·
China International Forum on Solid State Lighting & International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS)
Hybridization and joint density of states dominated evolutions in the dielectric function of Bi2Se3 thin films
2019
·
Mingsheng Fang
, Honggang Gu
, et al.
·
International Photonics and Optoelectronics Meetings
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Works count:
25
Citation count:
509
H-index:
12
I10-index:
13
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