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Jake Soto

Observed name: Soto, Jake
ORCID: 0009-0003-0025-7105
Observed ORCID: 0009-0003-0025-7105
OpenAlex ID: A5060432038
Defects in 4H-SiC epilayers affecting device yield and reliability
2022 · Robert Stahlbush, Nadeemullah Mahadik, et al. · IEEE International Reliability Physics Symposium proceedings · 16
Nondestructive microstructural investigation of defects in 4H-SiC epilayers using a multiscale luminescence analysis approach
2022 · Sami A. El Hageali, Harvey Guthrey, et al. · Journal of Applied Physics · 13
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Optoelectronic and structural characterization of trapezoidal defects in 4H-SiC epilayers and the effect on MOSFET reliability
2023 · Sami A. El Hageali, Harvey Guthrey, et al. · Journal of Applied Physics · 12
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A Comparison of Ion Implantation at Room Temperature and Heated Ion Implantation on the Body Diode Degradation of Commercial 3.3 kV 4H-SiC Power MOSFETs
2022 · Jiashu Qian, Tianshi Liu, et al. · IEEE Workshop on Wide Bandgap Power Devices and Applications · 4
Stacking Faults Originating from Star-Defects in 4H-SiC
2023 · Sami El Hageali, Nadeem Mahadik, et al. · Defect and diffusion forum/Diffusion and defect data, solid state data. Part A, Defect and diffusion forum · 2
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Challenges in Investigating UIS Material-Based Failures & Yield Prediction in the Absence of Robust 4H-SiС Epiwafer Quality Standards
2025 · Jake Soto, Bruce Odekirk, et al. · Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena
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Investigation of BPD Faulting under Extreme Carrier Injection in Room vs High Temperature Implanted 3.3kV SiC MOSFETs
2024 · Nadeemullah A. Mahadik, Michael E. Liao, et al. · Defect and diffusion forum/Diffusion and defect data, solid state data. Part A, Defect and diffusion forum
Works count: 10
Citation count: 47
H-index: 4
I10-index: 3
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