2004 · T. Araki, Y. Saito, et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 46

Low resistivity of highly Si-doped n-type Al0.62Ga0.38N layer by suppressing self-compensation

2019 · Kengo Nagata, Hiroaki Makino, et al. · Applied Physics Express · 43

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Growth of AlN films on SiC substrates by RF-MBE and RF-MEE

2001 · N. Teraguchi, A. Suzuki, et al. · Journal of Crystal Growth · 42

Efficiency improvement of AlGaN-based deep-ultraviolet light-emitting diodes and their virus inactivation application

2021 · Yoshiki Saito, Satoshi Wada, et al. · Japanese Journal of Applied Physics · 41

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Structure Analysis of InN Film Using Extended X-Ray Absorption Fine Structure Method

2002 · T. Miyajima, Y. Kudo, et al. · physica status solidi (b) · 31

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m -Plane GaInN Light Emitting Diodes Grown on Patterned a -Plane Sapphire Substrates

2009 · Yoshiki Saito, Koji Okuno, et al. · Applied Physics Express · 30

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Relationship between the density of states effective mass and carrier concentration of thermoelectric phosphide Ag6Ge10P12 with strong mechanical robustness

2022 · H. Namiki, M. Kobayashi, et al. · Materials Today Sustainability · 27

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m-Plane GaN Films Grown on Patterneda-Plane Sapphire Substrates with 3-inch Diameter

2009 · Koji Okuno, Yoshiki Saito, et al. · Applied Physics Express · 26

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Surface treatment of GaN and InN using (NH 4 ) 2 S x

2003 · T. Maruyama, K. Yorozu, et al. · Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics · 24

The inhibitory effect of simvastatin on growth in malignant gliomas - with special reference to its local application with fibrin glue spray in vivo

2001 · Masaji Murakami, Tomoaki Goto, et al. · International Journal of Oncology · 23

Operation-induced degradation mechanisms of 275-nm-band AlGaN-based deep-ultraviolet light-emitting diodes fabricated on a sapphire substrate

2023 · S. F. Chichibu, K. Nagata, et al. · Applied Physics Letters · 22

Reduction in operating voltage of AlGaN homojunction tunnel junction deep-UV light-emitting diodes by controlling impurity concentrations

2021 · Kengo Nagata, Hiroaki Makino, et al. · Applied Physics Express · 22

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Electronic degeneracy conduction in highly Si-doped Al0.6Ga0.4N layers based on the carrier compensation effect

2020 · Keita Kataoka, Tetsuo Narita, et al. · Applied Physics Letters · 22

Effect of AlN buffer layer on the growth of InN epitaxial film on Si substrate

2003 · T. Yamaguchi, Y. Saito, et al. · physica status solidi (b) · 20

Hypocholesterolemic alkaloids of Lentinus edodes (Berk.) Sing.—I

1972 · T. Kamiya, Y. Saito, et al. · Tetrahedron · 20

Influence of substrate polarity on growth of InN films by RF‐MBE

2003 · Fumie Matsuda, Yoshiki Saito, et al. · Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics · 19

Works count: 74

Citation count: 3,241

H-index: 22

I10-index: 40