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Author

Girish Shankar Mishra

Observed name: Girish S. Mishra
Institution: GITAM University
Observed institution: GITAM University
ORCID: 0000-0002-6109-1896
Observed ORCID: 0000-0002-6109-1896
OpenAlex ID: A5061054135
Impact of InGaN notch on sensitivity in dielectric modulated dual channel GaN MOSHEMT for label-free biosensing
2023 · Girish Shankar Mishra, N. Mohankumar, et al. · Current Applied Physics · 15
Design and Simulation of advanced boron-doped GaN cap layer on AlGaN/GaN MOSHEMTs for enhanced label-free biosensing applications
2025 · Reddy Govindappagari Hemalatha, Manoharan Arun Kumar, et al. · Biomedical Microdevices · 11
GaN Devices for Optoelectronics Applications
2024 · Nagarajan Mohankumar, Girish S. Mishra · Wiley eBooks · 5
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Impact of capacitance and linearity on the reliability of InGaN notch based dual channel GaN MOSHEMTs for precision biosensing
2024 · Girish Shankar Mishra, N. Mohankumar, et al. · Microsystem Technologies · 3
Sensitivity improvement in gate engineered technique dielectric modulated GaN MOSHEMT with InGaN notch for label-free biosensing
2024 · Girish Shankar Mishra, N Mohankumar, et al. · Engineering Research Express · 1
CV Analysis and Linearity Performance of InGaN Notch Dielectric Modulated Dual Channel GaN MOSHEMT for Reliable Label-free Biosensing
2022 · Girish Shankar Mishra, N. Mohankumar, et al. · IEEE International Conference of Electron Devices Society Kolkata Chapter (EDKCON) · 1
Noise Characterization of InAs Based Composite Channel DG -MOSHEMT with Different Gate Dielectrics
2021 · G. Sujatha, N. Mohankumar, et al. · Silicon · 1
Effect of sensitivity on the performance of dielectric–modulated asymmetrical AlGaN/GaN/InGaN/GaN MOSHEMTs for precise biosensing applications
2026 · Girish Shankar Mishra, N. Mohankumar, et al. · Micro and Nano Systems Letters
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Impact of geometrical parameters on sensitivity and selectivity in InGaN notch-engineered AlGaN/GaN MOSHEMT biosensor
2026 · Girish Shankar Mishra, N. Mohankumar, et al. · Microsystem Technologies
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Noise Analysis in Dual Quantum Well InAs-based Double-Gate (DG) HEMTs
2021 · Girish Shankar Mishra · CRC Press eBooks
Correction to: Noise Characterization of InAs Based Composite Channel DG -MOSHEMT with Different Gate Dielectrics
2021 · G. Sujatha, N. Mohankumar, et al. · Silicon
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Compact Modeling of Schottky Gate-all-around Silicon Nanowire Transistors with Halo Doping
2021 · Girish Shankar Mishra, N. Mohankumar, et al. · Silicon
Works count: 12
Citation count: 37
H-index: 3
I10-index: 2
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