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Christophe Müller

Observed names: C Muller, C. Muller, CH. MULLER, Ch Muller, Ch. Muller, Christophe Muller, Chritophe Muller, M. Christophe Muller, MULLER, Christophe, Muller, C., Muller, C., A., Muller, Ch., Muller, Christophe
Observed institutions: Centre National de la Recherche Scientifique, Université de Toulon, Aix-Marseille Université, University of Catania, Institut des Matériaux, de Microélectronique et des Nanosciences de Provence, IMEC, Château Gombert, Aix-Marseille Sciences Economiques, Institute for Microelectronics and Microsystems, Université Aix-Marseille-III, Université de Provence Aix-Marseille I
ORCID: 0000-0002-6009-2870
Observed ORCID: 0000-0002-6009-2870
OpenAlex ID: A5062033283
Coexistence of the bipolar and unipolar resistive-switching modes in NiO cells made by thermal oxidation of Ni layers
2010 · L. Goux, J. G. Lisoni, et al. · Journal of Applied Physics · 188
Robust Compact Model for Bipolar Oxide-Based Resistive Switching Memories
2014 · Marc Bocquet, Damien Deleruyelle, et al. · IEEE Transactions on Electron Devices · 138
Synchronous Non-Volatile Logic Gate Design Based on Resistive Switching Memories
2013 · Weisheng Zhao, Mathieu Moreau, et al. · IEEE Transactions on Circuits and Systems I Regular Papers · 124
Experimental and theoretical study of electrode effects in HfO2 based RRAM
2011 · C. Cagli, J. Buckley, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 86
Sr-doped PbZr1−xTixO3 ceramic: structural study and field-induced reorientation of ferroelectric domains
2000 · C. Bedoya, Ch. Muller, et al. · Materials Science and Engineering B · 72
Self-consistent physical modeling of set/reset operations in unipolar resistive-switching memories
2011 · Marc Bocquet, Damien Deleruyelle, et al. · Applied Physics Letters · 68
Neutron diffraction study of the relaxor-ferroelectric phase transition in disordered Pb(Sc1/2Nb1/2)O3
2000 · C Perrin, N Menguy, et al. · Journal of Physics Condensed Matter · 65
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Oxidation kinetics of Ni metallic films: Formation of NiO-based resistive switching structures
2007 · L. Courtade, Ch. Turquat, et al. · Thin Solid Films · 50
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BICOVOX family of oxide anion conductors: chemical, electrical and structural studies
1995 · Sylvie Lazure, Rose-No�lle Vannier, et al. · Journal of Materials Chemistry · 48
Bipolar ReRAM Based non-volatile flip-flops for low-power architectures
2012 · Santhosh Onkaraiah, Marina Reyboz, et al. · IEEE Interregional NEWCAS Conference (NEWCAS) · 47
Accurate analysis of parasitic current overshoot during forming operation in RRAMs
2011 · S. Tirano, L. Perniola, et al. · Microelectronic Engineering · 47
Role of Ti and Pt electrodes on resistance switching variability of HfO2-based Resistive Random Access Memory
2012 · T. Cabout, J. Buckley, et al. · Thin Solid Films · 46
Ge-doped GaSb thin films with zero mass density change upon crystallization for applications in phase change memories
2016 · Magali Putero, Marie-Vanessa Coulet, et al. · Applied Physics Letters · 45
Switching of nanosized filaments in NiO by conductive atomic force microscopy
2012 · F. Nardi, D. Deleruyelle, et al. · Journal of Applied Physics · 43
Polarization fatigue in PbZr0.45Ti0.55O3-based capacitors studied from high resolution synchrotron x-ray diffraction
2005 · N. Menou, Ch. Muller, et al. · Journal of Applied Physics · 39
A Highly Reliable 3-D Integrated SBT Ferroelectric Capacitor Enabling FeRAM Scaling
2005 · L. Goux, G. Russo, et al. · IEEE Transactions on Electron Devices · 36
Compact Modeling Solutions for Oxide-Based Resistive Switching Memories (OxRAM)
2014 · Marc Bocquet, Hassen Aziza, et al. · Journal of Low Power Electronics and Applications · 35
Ge2Sb2Te5 layer used as solid electrolyte in conductive-bridge memory devices fabricated on flexible substrate
2012 · D. Deleruyelle, M. Putero, et al. · Solid-State Electronics · 34
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Temperature-dependent neutron powder diffraction evidence for splitting of the cationic sites in ferroelectric PbHf0.4Ti0.6O3
1999 · C. Muller, J.-L. Baudour, et al. · Acta Crystallographica Section B Structural Science · 34
Unusual crystallization behavior in Ga-Sb phase change alloys
2013 · Magali Putero, Marie-Vanessa Coulet, et al. · APL Materials · 33
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Design and Test Challenges in Resistive Switching RAM (ReRAM): An Electrical Model for Defect Injections
2009 · O. Ginez, J.-M. Portal, et al. · IEEE European Test Symposium (ETS) · 33
Evaluation of OxRAM cell variability impact on memory performances through electrical simulations
2011 · H. Aziza, M. Bocquet, et al. · Non-Volatile Memory Technology Symposium · 31
Low-power resistive switching in Au/NiO/Au nanowire arrays
2012 · S. Brivio, G. Tallarida, et al. · Applied Physics Letters · 30
Temperature impact (up to 200 °C) on performance and reliability of HfO2-based RRAMs
2013 · T. Cabout, L. Perniola, et al. · IEEE International Memory Workshop (IMW) · 29
Lattice vibrations and order–disorder transition in the oxide anion conductor BICOVOX.15: a neutron thermodiffractometry study
1998 · C Muller, M Anne, et al. · Solid State Ionics · 29
Works count: 118
Citation count: 2,144
H-index: 26
I10-index: 55
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