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S.N. Agbo

Observed names: Agbo, Nereus, N. Agbo, N. S. Agbo, Nereus Agbo, Nereus Sunday Agbo, Sunday Nereus Agbo
ORCID: 0000-0001-6196-5111
Observed ORCID: 0000-0001-6196-5111
OpenAlex ID: A5062340261
Comparison of Short Circuit Failure Modes in SiC Planar MOSFETs, SiC Trench MOSFETs and SiC Cascode JFETs
2021 · Erfan Bashar, Ruizhu Wu, et al. · IEEE Workshop on Wide Bandgap Power Devices and Applications · 32
Performance of Parallel Connected SiC MOSFETs under Short Circuits Conditions
2021 · Ruizhu Wu, Simon Mendy, et al. · Energies · 23
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Benchmarking the robustness of Si and SiC MOSFETs: Unclamped inductive switching and short-circuit performance
2022 · J. Ortiz Gonzalez, A. Deb, et al. · Microelectronics Reliability · 14
Measurement and simulation of short circuit current sharing under parallel connection: SiC MOSFETs and SiC Cascode JFETs
2021 · R. Wu, S.N. Agbo, et al. · Microelectronics Reliability · 14
UIS performance and ruggedness of stand-alone and cascode SiC JFETs
2020 · S.N. Agbo, J. Ortiz Gonzalez, et al. · Microelectronics Reliability · 13
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Robustness and reliability review of Si and SiC FET devices for more-electric-aircraft applications
2019 · J. Ortiz Gonzalez, R. Wu, et al. · Microelectronics Reliability · 11
Performance of SiC cascode JFETs under single and repetitive avalanche pulses
2020 · S.N. Agbo, J. Ortiz-Gonzalez, et al. · Microelectronics Reliability · 7
Simulations and Measurements of Failure Modes in SiC Cascode JFETs under Short Circuit Conditions
2021 · Sunday Nereus Agbo, Erfan Bashar, et al. · IEEE ... Workshop on Control and Modeling for Power Electronics · 6
The Impact of Varying the High-Temperature Post-Deposition Anneal Time or Temperature Ramp Rates on ALD-SiO2/4H-SiC Interfaces
2024 · X. Tian, A. B. Renz, et al. · IEEE Workshop on Wide Bandgap Power Devices and Applications in Europe (WiPDA Europe) · 2
A Comparison of the Short Circuit Performance of 650 V SiC Planar MOSFETs, Trench MOSFETs and Cascode JFETs
2022 · O. Alatise, B. Erfan, et al. · IET conference proceedings. · 2
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Influence of the SiC JFET Gate Impedance on the Off-State Voltage Balance in Cascode Configuration
2022 · Simon Mendy, Nereus Sunday Agbo, et al. · IEEE Workshop on Wide Bandgap Power Devices and Applications in Europe (WiPDA Europe) · 1
Vertical GaN Schottky barrier diodes: Impact of device dimensions and micro-masking on mesa edge termination
2026 · Mritunjay Kumar, Chengzhi Zhang, et al. · Applied Physics Letters
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Investigation of temperature-dependent oxide capacitance in paraelectric monoclinic doped HfO2/SiO2 gate stacks implemented on 4H-SiC
2026 · X. Tian, A. B. Renz, et al. · Applied Physics Letters
Characterisation of Unclamped Inductive Switching in SiC Cascode JFETs
2021 · N. S. Agbo, J. Ortiz-Gonzalez, et al. · IET conference proceedings.
Works count: 15
Citation count: 130
H-index: 7
I10-index: 6
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