Author

Seigo Mori

Observed name: S. Mori

Institution: ROHM

Observed institution: ROHM

ORCID: 0000-0002-0800-823X

Observed ORCID: 0000-0002-0800-823X

OpenAlex ID: A5062381109

Progress and future challenges of SiC power devices and process technology

2017 · T. Kimoto, H. Niwa, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 27

High-Temperature Characteristics of 3-kV 4H-SiC Reverse Blocking MOSFET for High-Performance Bidirectional Switch

2017 · Seigo Mori, Masatoshi Aketa, et al. · IEEE Transactions on Electron Devices · 24

Demonstration of 3 kV 4H-SiC reverse blocking MOSFET

2016 · Seigo Mori, Masatoshi Aketa, et al. · IEEE International Symposium on Power Semiconductor Devices and ICs/Proceedings of the International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices and ICs · 20

Suppression of Punch-Through Current in 3 kV 4H-SiC Reverse-Blocking MOSFET by Using Highly Doped Drift Layer

2018 · Seigo Mori, Masatoshi Aketa, et al. · IEEE Journal of the Electron Devices Society · 12

Performance transition from full- to semi-superjunction geometries in 4H-SiC

2025 · Daisuke Iizasa, Hiroaki Shiraga, et al. · Journal of Applied Physics · 2

Investigation of thermal runaway of reverse-biased silicon carbide schottky barrier diode

2017 · M. Nakagawa, S. Mori, et al. · IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) · 2

Outperformance of Asymmetric 4H-SiC Superjunction Geometry Beyond the Optimal Limit of Symmetric Design

2025 · Daisuke Iizasa, Hiroaki Shiraga, et al. · IEEE International Symposium on Power Semiconductor Devices and ICs/Proceedings of the International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices and ICs · 1

Theory of asymmetric geometry control for enhanced on-resistance in 4H-SiC semi-superjunction devices

2025 · Daisuke Iizasa, Hiroaki Shiraga, et al. · Semiconductor Science and Technology

Robustness against Thermal Runaway of Reverse-Biased Silicon Carbide

2017 · Minoru Nakagawa, Seigo Mori, et al. · The Japan Society of Applied Physics

Works count: 9

Citation count: 88

H-index: 4

I10-index: 4