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Jingtian Fang

Observed names: Fang, Jingtian, J. Fang
ORCID: 0000-0002-9493-2276
Observed ORCID: 0000-0002-9493-2276
OpenAlex ID: A5062691781
Multiple Defects Cause Degradation After High Field Stress in AlGaN/GaN HEMTs
2018 · Rong Jiang, Xiao Shen, et al. · IEEE Transactions on Device and Materials Reliability · 72
Microscopic dielectric permittivities of graphene nanoribbons and graphene
2016 · Jingtian Fang, William G. Vandenberghe, et al. · Physical review. B./Physical review. B · 61
Electron Transport Properties of AlxGa1−xN/GaN Transistors Based on First-Principles Calculations and Boltzmann-Equation Monte Carlo Simulations
2019 · Jingtian Fang, Massimo V. Fischetti, et al. · Physical Review Applied · 40
Understanding the Average Electron–Hole Pair-Creation Energy in Silicon and Germanium Based on Full-Band Monte Carlo Simulations
2018 · Jingtian Fang, Mahmud Reaz, et al. · IEEE Transactions on Nuclear Science · 32
Theoretical Study of Ballistic Transport in Silicon Nanowire and Graphene Nanoribbon Field-Effect Transistors Using Empirical Pseudopotentials
2017 · Jingtian Fang, Shanmeng Chen, et al. · IEEE Transactions on Electron Devices · 24
Pseudopotential-based electron quantum transport: Theoretical formulation and application to nanometer-scale silicon nanowire transistors
2016 · Jingtian Fang, William G. Vandenberghe, et al. · Journal of Applied Physics · 22
3-D Full-Band Monte Carlo Simulation of Hot-Electron Energy Distributions in Gate-All-Around Si Nanowire MOSFETs
2021 · Mahmud Reaz, Andrew M. Tonigan, et al. · IEEE Transactions on Electron Devices · 18
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Modeling of Negative Bias Temperature Instability (NBTI) for Gate-All-Around (GAA) Stacked Nanosheet Technology
2024 · Leitao Liu, Jingtian Fang, et al. · IEEE International Reliability Physics Symposium proceedings · 4
Modeling of Hole Generation Process in AlGaN/GaN HEMTs
2025 · Ying-Chun Kuo, Hao Yu, et al. · International Conference on Simulation of Semiconductor Processes and Devices · 3
Threshold Voltage Bias Temperature Instability of RF MIS-HEMTs and Schottky HEMTs Under Semi-On State Stress
2025 · Meng-Che Tsai, Ying-Chun Kuo, et al. · IEEE Transactions on Electron Devices · 3
Full-band ballistic quantum transport in nanostructures using empirical pseudopotentials
2014 · J. Fang, W. Vandenberghe, et al. · International Workshop on Computational Electronics · 2
Transistors performance in the sub-1 nm technology node based on one-dimensional nanomaterials
2015 · Jingtian Fang, William G. Vandenberghe, et al. · International Conference on Simulation of Semiconductor Processes and Devices · 1
Progress on quantum transport simulation using empirical pseudopotentials
2015 · Jingtian Fang, William Vandenberghe, et al. · International Workshop on Computational Electronics · 1
Semi-On State Hole Generation in GaN HEMTs: Experimental Evidence and TCAD Modeling
2026 · Ying-Chun Kuo, Hao Yu, et al. · IEEE Electron Device Letters
UISEE: Driving Innovation Technology and the Evolution of Autonomous Vehicles
2024 · Jingtian Fang · Advances in business strategy and competitive advantage book series
Ab initio Methods for Electronic Transport in Semiconductors and Nanostructures
2022 · Massimo V. Fischetti, William G. Vandenberghe, et al. · Springer handbooks
First-principles Monte Carlo simulation of electron transport in Al x Ga 1-x N/GaN high-electron-mobility transistors
2018 · Jingtian Fang, Ronald D. Schrimpf, et al. · Bulletin of the American Physical Society
Quantum transport and dielectric response of nanometer scale transistors using empirical pseudopotentials
2016 · Jingtian Fang
Three-dimensional plane-wave full-band quantum transport using empirical pseudopotentials
2015 · Jingtian Fang, William G. Vandenberghe, et al. · Bulletin of the American Physical Society
Full band quantum transport using mixed supercell and envelop function method
2014 · Jingtian Fang, William G. Vandenberghe, et al. · Bulletin of the American Physical Society
Works count: 21
Citation count: 283
H-index: 7
I10-index: 7
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