Author

Kyunghun Lyu

Institution: Soongsil University

Observed institution: Soongsil University

ORCID: 0009-0007-8191-9308

Observed ORCID: 0009-0007-8191-9308

OpenAlex ID: A5062762037

Suppression of interfacial layers in ZrO 2 /TiN capacitors by atomic layer deposition using ligand-engineered Zr precursors for scalable DRAM

2025 · Hyeongjun Kim, Juan Hong, et al. · Materials Horizons · 7

Emergence of material-driven two-dimensional electron gas by thermodynamically robust layers in Al 2 O 3 /In 2 O 3 /Al 2 O 3 nanolaminate structures

2025 · Kyunghun Lyu, Jiyoung Park, et al. · Nanoscale · 6

Crystallinity and stoichiometry engineering in TiO2 thin films via O3 post-treatment for enhanced dielectric properties

2026 · Juan Hong, Hyeongjun Kim, et al. · Ceramics International · 1

Indirect Synthesis of Carbon-Free Perovskite SrTiO3 Thin Films via SrF2 and TiO2 ALD for DRAM Capacitors

2026 · Jaejun Lee, Sangyeon Jeong, et al. · Applied Surface Science · 1

Dual-Co-reactant ALD of high-k TiO2 with reduced carbon and improved interfaces

2026 · Kyunghun Lyu, Jiwon Ahn, et al. · Surfaces and Interfaces

Author response for "Suppression of Interfacial Layers in ZrO₂/TiN Capacitors by Atomic Layer Deposition Using Ligand-Engineered Zr Precursors for Scalable DRAM"

2025 · Hyeongjun Kim, Juan Hong, et al. · Publons reviews and discussion

Author response for "Suppression of Interfacial Layers in ZrO₂/TiN Capacitors by Atomic Layer Deposition Using Ligand-Engineered Zr Precursors for Scalable DRAM"

2025 · Hyeongjun Kim, Juan Hong, et al. · Publons reviews and discussion

Works count: 7

Citation count: 15

H-index: 2

I10-index: