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Mohammed Tanvir Quddus

Observed names: M T Quddus, M. Quddus, M.T. Quddus, Mohammed Quddus, Mohammed T Quddus, Mohammed T. Quddus, T. Quddus, Tanvir Quddus
OpenAlex ID: A5062955543
Efficacy of Charge Sharing in Reshaping the Surface Electric Field in High-Voltage Lateral RESURF Devices
2004 · M. Imam, M. Quddus, et al. · IEEE Transactions on Electron Devices · 80
Design and optimization of double-resurf high-voltage lateral devices for a manufacturable process
2003 · M. Imam, Z. Hossain, et al. · IEEE Transactions on Electron Devices · 72
UltiMOS: A local charge-balanced trench-based 600V super-junction device
2011 · P Moens, F. Bogman, et al. · IEEE International Symposium on Power Semiconductor Devices and ICs/Proceedings of the International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices and ICs · 27
Unified model for QBD prediction for thin gate oxide MOS devices with constant voltage and current stress
2000 · Mohammed T. Quddus, Thomas A. DeMassa, et al. · Microelectronic Engineering · 23
Surface plasmons and breakdown in thin silicon dioxide films on silicon
1998 · Jong-Hyun Kim, Julian J. Sanchez, et al. · Journal of Applied Physics · 16
Physics-Based Breakdown Voltage Optimization of Trench MOS Barrier Schottky Rectifiers
2018 · Alvaro D. Latorre-Rey, Mihir Mudholkar, et al. · IEEE Transactions on Electron Devices · 15
A novel trench Schottky rectifier structure with controlled conductivity modulation
2014 · Mihir Mudholkar, Mohammed Tanvir Quddus, et al. · IEEE International Symposium on Power Semiconductor Devices and ICs/Proceedings of the International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices and ICs · 6
Trench schottky rectifiers with non-uniform trench depths
2017 · Mihir Mudholkar, Mohammed Tanvir Quddus, et al. · IEEE International Symposium on Power Semiconductor Devices and ICs/Proceedings of the International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices and ICs · 5
Modeling of time dependence of hole current and prediction of QBD and tBD for thin gate MOS devices based upon anode hole injection
2001 · Mohammed T Quddus, Thomas A DeMassa, et al. · Solid-State Electronics · 5
Trench MOS Schottky Diodes: A Physics-Based Analytical Model Approach to Charge Sharing
2025 · Mohammed Tanvir Quddus, Alvaro D. Latorre-Rey, et al. · Micromachines · 4
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A Generic Methodology for Breakdown Voltage Optimization of Lateral Silicon‐On‐Insulator Power Devices
2020 · Viswanathan Naveen Kumar, Mihir Mudholkar, et al. · physica status solidi (a) · 4
A charge-based model of Junction Barrier Schottky rectifiers
2018 · Alvaro D. Latorre-Rey, Mihir Mudholkar, et al. · Solid-State Electronics · 4
Carrier separation technique to optimize conductivity modulation in high voltage rectifiers
2015 · Mohammed Tanvir Quddus, Mihir Mudholkar, et al. · IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC) · 3
Temperature dependence of surface plasmon and breakdown for thin and thick silicon-dioxide
1999 · Jong-Hyun Kim, Julian J. Sanchez, et al. · Solid-State Electronics · 3
Modeling of charge to breakdown Q/sub BD/ for thin gate oxide MOS devices
2003 · M.T. Quddus, T.A. DeMassa, et al. · Biennial University/Government/Industry Microelectronics Symposium · 2
Back-Gate Bias Effects on Breakdown Voltage in Lateral Silicon-on-Insulator Power Devices
2025 · Viswanathan Naveen Kumar, Mohammed Tanvir Quddus, et al. · Microelectronics · 1
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Energy Band Analysis of Injected and Trapped Charge in Shield Oxide: Effects on Electric Field and Breakdown Behavior in Power Trench MOSFETs
2026 · Zeinab Ramezani, Mohammed Tanvir Quddus, et al. · IEEE International Symposium on Power Semiconductor Devices and ICs/Proceedings of the International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices and ICs
Low forward voltage trench Schottky diode with tapered oxide
2026 · Ziyi Wang, Zeinab Ramezani, et al. · Microelectronics Reliability
Manufacturing optimization for silicon trench rectifiers using NiPt salicide: NiPt salicide formation to modulate electrical parameters
2017 · Mike Thomason, Mohammed Quddus, et al. · ASMC proceedings
Manufacturing optimization for Silicon Trench rectifiers using NiPt salicide
2017 · Mike Thomason, Mohammed Quddus, et al. · International Convention on Information and Communication Technology, Electronics and Microelectronics
Mos素子ゲート酸化膜の絶縁破壊電荷量q Bd のモデル化
1999 · M T Quddus, T A Demassa, et al. · Biennial University/Government/Industry Microelectronics Symposium
Analytical modelling of breakdown in short channel MOSFETs
1993 · Tanvir Quddus
Works count: 22
Citation count: 270
H-index: 6
I10-index: 6
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