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P. John

Observed names: John, Philipp M., P John, Philipp John, Philipp Maximilian John
ORCID: 0000-0001-6658-6938
Observed ORCID: 0000-0001-6658-6938
OpenAlex ID: A5063115398
Microstructure of epitaxial Mg3N2 thin films grown by MBE
2021 · P. John, P. Vennéguès, et al. · Journal of Applied Physics · 15
ScN/GaN(11̅00): A New Platform for the Epitaxy of Twin-Free Metal–Semiconductor Heterostructures
2024 · Philipp John, Achim Trampert, et al. · Nano Letters · 12
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Crystalline magnesium nitride ( Mg3N2 ): From epitaxial growth to fundamental physical properties
2020 · P. John, H. Rotella, et al. · Physical Review Materials · 12
AlN Nanowire-Based Vertically Integrated Piezoelectric Nanogenerators
2024 · N. Buatip, T. Auzelle, et al. · ACS Applied Nano Materials · 10
Dislocation correlations in GaN epitaxial films revealed by EBSD and XRD
2025 · Vladimir M. Kaganer, Domenik Spallek, et al. · Acta Materialia · 9
Growth kinetics and substrate stability during high-temperature molecular beam epitaxy of AlN nanowires
2023 · P John, M Gómez Ruiz, et al. · Nanotechnology · 8
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Epitaxial Zn3N2 thin films by molecular beam epitaxy: Structural, electrical, and optical properties
2021 · P. John, M. Al Khalfioui, et al. · Journal of Applied Physics · 8
Density control of GaN nanowires at the wafer scale using self-assembled SiN x patches on sputtered TiN(111)
2023 · T Auzelle, M Oliva, et al. · Nanotechnology · 5
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Corrigendum to “Dislocation correlations in GaN epitaxial films revealed by EBSD and XRD” [Acta Materialia 297 (2025) 121357]
2025 · Vladimir M. Kaganer, Domenik Spallek, et al. · Acta Materialia · 1
Growth of compositionally uniform InxGa1−xN layers with low relaxation degree on GaN by molecular beam epitaxy
2025 · Jingxuan Kang, Mikel Gómez Ruiz, et al. · Journal of Physics D Applied Physics · 1
Supplementary materials
2026 · Huaide Zhang, Philipp John, et al. · AIP Publishing
Simultaneously monitoring Ga adsorption and desorption kinetics on GaN(0001) using four in situ techniques
2026 · Oliver Brandt, Lutz Geelhaar, et al. · AIP Publishing
Simultaneously monitoring Ga adsorption and desorption kinetics on GaN(0001) using four in situ techniques
2026 · Huaide Zhang, Philipp John, et al. · APL Materials
Molecular Beam Epitaxy of Al(1-x)Sc(x)N Nanowires: Towards Group-III Nitride Piezoelectric Nanogenerators with Enhanced Response
2026 · Notarangelo, Adriano, Songmuang, Rudeesun, et al. · HAL
Molecular Beam Epitaxy of Al$\mathrm{_{1-x}}$Sc$\mathrm{_{x}}$N Nanowires: Towards Group-III Nitride Piezoelectric Nanogenerators with Enhanced Response
2026 · Notarangelo, Adriano, Songmuang, Rudeesun, et al. · arXiv (Cornell University)
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Composition and optical properties of (In, Ga)As nanowires grown by group-III-assisted molecular beam epitaxy
2024 · M Gómez Ruiz, A Castro, et al. · Nanotechnology
MBE-growth and characterization of Zn3N2 and Mg3N2 : from epitaxy to materials science
2021 · Philipp Maximilian John · theses.fr (ABES)
Works count: 17
Citation count: 81
H-index: 7
I10-index: 4
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