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A. Boursali

Observed names: Amin Boursali, Boursali, Amin, amin boursali
Observed institution: University of Abou Bekr Belkaïd
OpenAlex ID: A5063898532
DC and RF characteristics of 20 nm gate length InAlAs/InGaAs/InP HEMTs for high frequency application
2020 · Amin Boursali, Ahlam Guen-Bouazza, et al. · International Journal of Electrical and Computer Engineering (IJECE) · 7
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Impact of Indium concentration In0.52 Al0.48 As/Inx Ga1-x As/InP HEMT device on DC and AC performances
2022 · amin boursali, ahlam guen -bouazza · Research Square
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Contribution à la modélisation et simulation numérique des composants à base de matériaux III.V : Application à un HEMT sur substrat InP
2021 · Boursali, Amin · Dépôt Institutionnel de lUniversité de Tlemcen
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Etude 3D Quantum Numerical Simulation of Performance in the HEMT
2015 · A. Boursali, A. Guen-Bouazza · World Academy of Science, Engineering and Technology, International Journal of Electronics and Communication Engineering
3D Quantum Simulation of a HEMT Device Performance
2015 · Z. Kourdi, B. Bouazza, et al. · World Academy of Science, Engineering and Technology, International Journal of Electronics and Communication Engineering
Power HEMTs Transistors for Radar Applications
2015 · A. Boursali, A. Guen Bouazza, et al. · World Academy of Science, Engineering and Technology, International Journal of Electronics and Communication Engineering
Works count: 6
Citation count: 7
H-index: 1
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