Author

Stephan Sprengel

Observed names: S Sprengel, S. Sprengel, Sprengel Stephan, Sprengel, Stephan

Institution: Technical University of Munich

Observed institutions: University of California, Santa Barbara, Benue State University, University of Surrey, IMEC, Technical University of Munich

OpenAlex ID: A5063899677

III–V-on-Silicon Photonic Integrated Circuits for Spectroscopic Sensing in the 2–4 μm Wavelength Range

2017 · Ruijun Wang, Anton Vasiliev, et al. · Sensors · 98

Widely tunable 23 μm III-V-on-silicon Vernier lasers for broadband spectroscopic sensing

2018 · Ruijun Wang, Stephan Sprengel, et al. · Photonics Research · 71

Room-temperature vertical-cavity surface-emitting lasers at 4 μ m with GaSb-based type-II quantum wells

2017 · G. K. Veerabathran, S. Sprengel, et al. · Applied Physics Letters · 59

Broad wavelength coverage 23 μm III-V-on-silicon DFB laser array

2017 · Ruijun Wang, Stephan Sprengel, et al. · Optica · 49

2 μm wavelength range InP-based type-II quantum well photodiodes heterogeneously integrated on silicon photonic integrated circuits

2015 · Ruijun Wang, Stephan Sprengel, et al. · Optics Express · 49

Type-II InP-based lasers emitting at 2.55 μm

2012 · Stephan Sprengel, Alexander Andrejew, et al. · Applied Physics Letters · 48

23 µm range InP-based type-II quantum well Fabry-Perot lasers heterogeneously integrated on a silicon photonic integrated circuit

2016 · Ruijun Wang, Stephan Sprengel, et al. · Optics Express · 43

InP-Based Type-II Quantum-Well Lasers and LEDs

2013 · S. Sprengel, C. Grasse, et al. · IEEE Journal of Selected Topics in Quantum Electronics · 43

III-V-on-silicon 2-µm-wavelength-range wavelength demultiplexers with heterogeneously integrated InP-based type-II photodetectors

2016 · Ruijun Wang, Muhammad Muneeb, et al. · Optics Express · 41

Novel InP- and GaSb-based light sources for the near to far infrared

2016 · Sprengel Stephan, Demmerle Frederic, et al. · Semiconductor Science and Technology · 37

Wavelength Dependence of Efficiency Limiting Mechanisms in Type-I Mid-Infrared GaInAsSb/GaSb Lasers

2017 · Timothy David Eales, Igor P. Marko, et al. · IEEE Journal of Selected Topics in Quantum Electronics · 33

GaSb-based vertical-cavity surface-emitting lasers with an emission wavelength at 3 μm

2016 · Alexander Andrejew, Stephan Sprengel, et al. · Optics Letters · 33

Up to 3 μm light emission on InP substrate using GaInAs/GaAsSb type-II quantum wells

2011 · Stephan Sprengel, Christian Grasse, et al. · Applied Physics Letters · 29

Heterogeneously integrated III–V-on-silicon 2.3x μm distributed feedback lasers based on a type-II active region

2016 · Ruijun Wang, Stephan Sprengel, et al. · Applied Physics Letters · 28

InP-based 2.8–3.5 μm resonant-cavity light emitting diodes based on type-II transitions in GaInAs/GaAsSb heterostructures

2012 · Christian Grasse, Peter Wiecha, et al. · Applied Physics Letters · 25

Widely Tunable III–V/Silicon Lasers for Spectroscopy in the Short-Wave Infrared

2019 · Ruijun Wang, Bahawal Haq, et al. · IEEE Journal of Selected Topics in Quantum Electronics · 20

Continuous wave vertical cavity surface emitting lasers at 2.5 μm with InP-based type-II quantum wells

2015 · S. Sprengel, A. Andrejew, et al. · Applied Physics Letters · 19

Room-temperature type-I GaSb-based lasers in the 3.0 - 3.7 μm wavelength range

2012 · Kristijonas Vizbaras, Augustinas Vizbaras, et al. · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · 19

GaInAs/GaAsSb-based type-II micro-cavity LED with 2–3μm light emission grown on InP substrate

2012 · Christian Grasse, Tobias Gruendl, et al. · Journal of Crystal Growth · 12

Transient thermal analysis of semiconductor diode lasers under pulsed operation

2017 · G. K. Veerabathran, S. Sprengel, et al. · AIP Advances · 7

InP-based type-II heterostructure lasers for wavelengths up to 2.7 μm

2015 · Stephan Sprengel, Ganpath K. Veerabathran, et al. · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · 6

Electrically-pumped VCSELs using type-II quantum wells for the mid-infrared

2018 · Markus-Christian Amann, Ganpath Kumar Veerabathran, et al. · Smart Photonic and Optoelectronic Integrated Circuits · 4

InP-Based Vertical-Cavity Surface-Emitting Lasers With Type-II Quantum Wells

2015 · Stephan Sprengel, Ganpath Kumar Veerabathran, et al. · IEEE Journal of Selected Topics in Quantum Electronics · 3

III-V/silicon photonic integrated circuits for spectroscopic sensing in the 2um wavelength range

2018 · Ruijun Wang, Muhammad Muneeb, et al. · Smart Photonic and Optoelectronic Integrated Circuits · 2

GaSb-based Electrically-Pumped Vertical Cavity Surface Emitting Lasers for the 3-4 μm Wavelength Range

2017 · G. K. Veerabathran, S. Sprengel, et al. · Conference on Lasers and Electro-Optics · 2

Works count: 50

Citation count: 790

H-index: 18

I10-index: 19