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Chenkai Deng
Observed names:
ChenKai Deng,
ChengKai Deng
Institution:
Shenzhen Polytechnic University
Observed institutions:
Shenzhen Polytechnic University,
Harbin Institute of Technology,
Southern University of Science and Technology
ORCID:
0000-0001-9585-353X
Observed ORCID:
0000-0001-9585-353X
OpenAlex ID:
A5064226577
Simulation of High Breakdown Voltage, Improved Current Collapse Suppression, and Enhanced Frequency Response AlGaN/GaN HEMT Using A Double Floating Field Plate
2023
·
Peiran Wang
, Chenkai Deng
, et al.
·
Crystals
·
17
PDF
Current collapse suppression in AlGaN/GaN HEMTs using dual-layer SiNx stressor passivation
2023
·
Chenkai Deng
, Wei-Chih Cheng
, et al.
·
Applied Physics Letters
·
15
2.86-kV vertical Cu2O/Ga2O3 heterojunction diodes with stepped double-layer structure
2025
·
XiaoHui Wang
, MuJun Li
, et al.
·
Journal of Alloys and Compounds
·
12
Optimization of CuOx/Ga2O3 Heterojunction Diodes for High-Voltage Power Electronics
2025
·
Xiaohui Wang
, Mujun Li
, et al.
·
Nanomaterials
·
11
PDF
Suppression of Short-Channel Effects in AlGaN/GaN HEMTs Using SiNx Stress-Engineered Technique
2024
·
Chenkai Deng
, Chuying Tang
, et al.
·
Nanomaterials
·
11
Charge Trapping Layer Enabled Normally-Off β-Ga2O3 MOSFET
2023
·
Minghao He
, Kangyao Wen
, et al.
·
IEEE Transactions on Electron Devices
·
11
Hydrogen Detection Performance of a Pt-AlGaN/GaN HEMT Sensor at High Temperatures in Air Ambient
2024
·
Wenmao Li
, Robert Sokolovskij
, et al.
·
Journal of The Electrochemical Society
·
10
Low Contact Resistivity of <10 Ω·mm for Au-Free Ohmic Contact on p-GaN/AlGaN/GaN
2024
·
ChuYing Tang
, ChengKai Deng
, et al.
·
IEEE Electron Device Letters
·
9
High-performance β-Ga2O3 Schottky barrier diodes with Mg current blocking layer using spin-on-glass technique
2024
·
MuJun Li
, MingHao He
, et al.
·
Applied Physics Letters
·
8
Carrier transport mechanism of Mg/Pt/Au Ohmic contact on p-GaN/AlGaN/GaN platform with ultra-low resistivity
2023
·
Chuying Tang
, Chun Fu
, et al.
·
Applied Physics Letters
·
8
Lithium Niobate MEMS Antisymmetric Lamb Wave Resonators with Support Structures
2024
·
Yi Zhang
, Yang Jiang
, et al.
·
Micromachines
·
7
PDF
A robust Ni/Au process and mechanism for p-type ohmic contact applied to GaN p-FETs
2024
·
Chuying Tang
, Chun Fu
, et al.
·
Journal of Alloys and Compounds
·
7
Gate Leakage suppression and breakdown improvement of InAlN/GaN MIS-HEMTs with N2O surface treatment
2025
·
Yang Jiang
, Fangzhou Du
, et al.
·
Journal of Alloys and Compounds
·
5
A Novel AlGaN/GaN SBD Thermal Sensor With Ultralow Power, Excellent Linearity, and High Sensitivity
2025
·
Yuhan Sun
, Kangyao Wen
, et al.
·
IEEE Sensors Journal
·
5
Electrically reconfigurable surface acoustic wave phase shifters based on ZnO TFTs on LiNbO3 substrate
2025
·
Yi Zhang
, Zilong Xiong
, et al.
·
International Journal of Extreme Manufacturing
·
5
Threshold voltage modulation on a CTL-based monolithically integrated E/D-mode GaN inverters platform with improved voltage transfer performance
2024
·
Yang Jiang
, FangZhou Du
, et al.
·
Applied Physics Letters
·
5
Improved breakdown performance in recessed-gate normally off GaN MIS-HEMTs by regrown fishbone trench
2024
·
JiaQi He
, PeiRan Wang
, et al.
·
Applied Physics Letters
·
5
Numerical Investigation on Electrothermal Performance of AlGaN/GaN HEMTs with Nanocrystalline Diamond/SiNx Trench Dual-Passivation Layers
2025
·
Peiran Wang
, Chenkai Deng
, et al.
·
Nanomaterials
·
4
PDF
High-temperature sensing of low-concentration CO2 using La2O3-gated AlGaN/GaN HEMT sensor
2025
·
Wenmao Li
, Hongze Zheng
, et al.
·
Sensors and Actuators A Physical
·
4
Improved gate leakage current and breakdown voltage of InAlN/GaN MIS-HEMTs by HfAlOx-based charge-trapping layer dielectric and in situ O3 treatment
2025
·
Fangzhou Du
, Yang Jiang
, et al.
·
Applied Physics Letters
·
4
Improvement of DC Performance and RF Characteristics in GaN-Based HEMTs Using SiNx Stress-Engineering Technique
2024
·
Chenkai Deng
, Peiran Wang
, et al.
·
Nanomaterials
·
4
PDF
Investigation on Gate Etching and Stability of GaN p-FETs
2024
·
Chuying Tang
, Fangzhou Du
, et al.
·
IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)
·
3
A Novel Discrete GaN/AlGaN/GaN-Based Schottky Diode Thermal Sensor With a Sensitivity Up to 13.3 mV/K
2025
·
Yuhan Sun
, Kangyao Wen
, et al.
·
IEEE Electron Device Letters
·
2
Novel 4H-SiC Double-Trench MOSFETs with Integrated Schottky Barrier and MOS-Channel Diodes for Enhanced Breakdown Voltage and Switching Characteristics
2025
·
Peiran Wang
, Chenglong Li
, et al.
·
Nanomaterials
·
2
PDF
Optimization of electric field distribution for AlGaN/GaN MIS-HEMT with thick i-GaN cap layer
2025
·
Kangyao Wen
, Chenkai Deng
, et al.
·
Applied Physics Letters
·
1
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Works count:
34
Citation count:
179
H-index:
8
I10-index:
7
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