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Daiki Iino

Observed names: Iino Daiki, Iino, Daiki, 飯野, 大輝
ORCID: 0009-0005-6993-2740
Observed ORCID: 0009-0005-6993-2740
OpenAlex ID: A5064319673
Analysis of formation mechanism of deposited film in a high-aspect-ratio hole during dry etching using fluorocarbon gas plasmas
2022 · Noboru Hiwasa, Junji Kataoka, et al. · Applied Physics Express · 14
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Angular distribution measurement of high-energy argon neutral and ion in a 13.56 MHz capacitively-coupled plasma
2021 · Keita Ichikawa, Manh Hung Chu, et al. · Applied Physics Express · 14
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Evaluation of absolute charge density at the bottom of high aspect capillary holes exposed to a pulsed very high frequency plasma
2020 · Makoto Moriyama, Naoya Nakahara, et al. · Japanese Journal of Applied Physics · 12
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Time-dependent measurement of charge density on the bottom of high aspect capillary hole in pulse-modulated VHF capacitively coupled Ar plasma
2020 · Makoto Moriyama, Naoya Nakahara, et al. · Japanese Journal of Applied Physics · 9
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Angular distribution measurement of high-energy ions and neutrals impinging on an RF electrode in a dual-frequency capacitively-coupled Ar plasma
2025 · Shunya Kawamura, Dohan Kim, et al. · Plasma Sources Science and Technology · 5
Influence of bias voltage on the Ar/CH 2 F 2 /O 2 plasma etching of Si 3 N 4 films
2024 · Shuichi Kuboi, Junji Kataoka, et al. · Japanese Journal of Applied Physics · 5
In situ analysis of SiO2 films etched under cryogenic conditions using H2/F2/Ar gas mixture plasma
2026 · Yuma Kato, Junji Kataoka, et al. · Applied Physics Letters · 4
Influence of Oxygen Addition and Wafer Bias Voltage on Bromine Atom Surface Reaction in a HBr/Ar Inductively Coupled Plasma
2013 · Daiki Iino, Yasuhiro Nojiri, et al. · Japanese Journal of Applied Physics · 4
Influence of sheath collisions on the ion angular distributions in a dual-frequency capacitively coupled plasma
2025 · Dohan Kim, Shunya Kawamura, et al. · Japanese Journal of Applied Physics · 3
Measurement of energy-resolved ion angular distribution in a dual-frequency capacitively coupled argon plasma
2025 · Dohan Kim, Shunya Kawamura, et al. · Japanese Journal of Applied Physics · 3
Infinite selectivity in dry etching process for high-aspect-ratio hole using C7HF7 gas plasma
2025 · Junji Kataoka, Norikatsu Sasao, et al. · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 2
Reactive ion etching process of SiO 2 film using on-site synthesized C 2 F 4 from CF 4
2021 · Daiki Iino, Satoshi Tanida, et al. · Japanese Journal of Applied Physics · 2
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On-site tetrafluoroethylene gas generation from moderate-pressure pure tetrafluoromethane plasma reactor
2020 · Hiromasa Ohmi, Jou Kikura, et al. · Chemical Engineering Science · 2
Investigation of surface reactions of etched SiN films using HF/PF3 gas mixture plasma under cryogenic conditions via in-line XPS: The role of ammonium salts in etch rate enhancement
2026 · Junji Kataoka, Yuma Kato, et al. · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 1
In-situ analysis of SiO2 films etched under cryogenic conditions using H2/F2/Ar gas mixture plasma
2026 · Kurihara, Kazuaki, Iino, Daiki, et al. · AIP Publishing
Supplement Number 1
2026 · Kato, Yuma, kataoka, junji, et al. · AIP Publishing
On-site C 2 F 4 generation from CF 4 feedstock gas using moderate-pressure plasma
2020 · Rei Tanaka, Tomoyuki Tanaka, et al. · The Japan Society of Applied Physics
Study on separation and concentration techniques for C 2 F 4 gas synthesized by pure CF 4 plasma
2020 · Hiromasa Ohmi, Rei Tanaka, et al. · The Japan Society of Applied Physics
The effect of reactive fluorocarbon species on high aspect ratio etching
2020 · Satoshi Tanida, Daiki Iino, et al. · The Japan Society of Applied Physics
Cf 4 プラズマによりオンサイト生成されるc 2 F 4 ガスの濃縮・高純度化
2020 · Nakatsuka Kogaku, Tanaka Ryo, et al. · 精密工学会大会学術講演会講演論文集
臭化水素誘導結合型プラズマにおける臭素ラジカルの表面損失過程に関する研究
2014 · 飯野, 大輝 · Institutional Repositories DataBase (IRDB)
Influence of Si Substrate Temperature and Bias Voltage on Surface Reaction of Br Radical in HBr Inductively Coupled plasma
2014 · Daiki Iino, Yoshitaka Fujii, et al. · Asia Pacific Physics Conference (APPC)
Influence of Oxygen Addition and Wafer Bias Voltage on Bromine Atom Surface Reaction in a HBr/Ar Inductively Coupled Plasma (Special Issue : Advanced Plasma Science and Its Applications for Nitrides and Nanomaterials)
2013 · Daiki Iino, Yasuhiro Nojiri, et al. · Japanese Journal of Applied Physics
Behavior of Br radical in HBr inductively coupled plasma
2013 · Daiki Iino · The Japan Society of Applied Physics
Works count: 24
Citation count: 80
H-index: 5
I10-index: 3
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