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Daniel J. Szostak
Observed names:
D Szostak,
D. J. Szostak,
D. SZOSTAK,
D. Szostak,
D.J. Szostak,
Daniel Szostak,
DanielJ. Szostak,
Szostak, D.
show all 8
Observed institutions:
Lawrence Berkeley National Laboratory,
Princeton University,
RCA (United States),
Fritz Haber Institute of the Max Planck Society,
Technische Universität Berlin,
University of California, Berkeley
show all 6
OpenAlex ID:
A5064395043
Subshell photoionization of Xe between 40 and 1000 eV
1989
·
U. Becker
, D. Szostak
, et al.
·
Physical Review A
·
198
Shake-off on inner-shell resonances of Ar, Kr and Xe
1987
·
P A Heimann
, D W Lindle
, et al.
·
Journal of Physics B Atomic and Molecular Physics
·
123
PDF
Helium and neon photoelectron satellites at threshold
1986
·
P. A. Heimann
, U. Becker
, et al.
·
Physical Review A
·
104
Langmuir evaporation from the (100), (111A), and (111B) faces of GaAs
1976
·
Bernard Goldstein
, Daniel J. Szostak
, et al.
·
Surface Science
·
80
Diffusion length of holes in a-Si:H by the surface photovoltage method
1981
·
J. Dresner
, D. J. Szostak
, et al.
·
Applied Physics Letters
·
71
Near-Threshold Resonance Enhancement of Neon Valence Satellites Studied with Synchrotron Radiation
1986
·
U. Becker
, R. Hölzel
, et al.
·
Physical Review Letters
·
68
Observation of many new argon valence satellites near threshold
1988
·
U. Becker
, B. Langer
, et al.
·
Physical Review Letters
·
62
PDF
Decay of the Xe 4d to np excitations: resonant shake-off versus shake-up and spectator transitions
1989
·
U Becker
, D Szostak
, et al.
·
Journal of Physics B Atomic Molecular and Optical Physics
·
51
Near-Threshold Measurements of the C 1s Satellites in the Photoelectron Spectrum of CO
1986
·
A. Reimer
, J. Schirmer
, et al.
·
Physical Review Letters
·
49
Characterization of clean and oxidized (100)LaB6
1978
·
Bernard Goldstein
, D.J. Szostak
·
Surface Science
·
48
Electron-Ejection Asymmetries by Molecular Orientation Following K -Shell Excitation of CO
1986
·
U. Becker
, R. Hölzel
, et al.
·
Physical Review Letters
·
46
Different bonding states of Cs and O on highly photoemissive GaAs by flash−desorption experiments
1975
·
Bernard Goldstein
, Daniel Szostak
·
Applied Physics Letters
·
46
Surface photovoltage, band-bending and surface states on a-Si : H
1980
·
Bernard Goldstein
, Daniel J. Szostak
·
Surface Science
·
35
Electrical characterization of solar cells by surface photovoltage
1981
·
Bernard Goldstein
, David Redfield
, et al.
·
Applied Physics Letters
·
29
High-performance GaAs photocathodes
1977
·
G. H. Olsen
, D. J. Szostak
, et al.
·
Journal of Applied Physics
·
28
Light-induced effects in amorphous silicon material and devices
1983
·
D.E. Carlson
, A.R. Moore
, et al.
·
Solar Cells
·
26
Photovoltage profiling of hydrogenated amorphous Si solar cells
1984
·
D. J. Szostak
, B. Goldstein
·
Journal of Applied Physics
·
20
Preferential evaporation of In from GaxIn1−xAs
1975
·
Bernard Goldstein
, Daniel Szostak
·
Applied Physics Letters
·
20
Effects of annealing on X-ray-amorphous CVD W-Si-N barrier layer materials
1999
·
O.H. Gokce
, S. Amin
, et al.
·
Thin Solid Films
·
17
Cascade-free lifetime measurements on the 1s3d-levels of He I
1978
·
G. v. Oppen
, W. -D. Perschmann
, et al.
·
The European Physical Journal A
·
17
Fine-structure and tensor polarizabilities of 1snd 3 D levels of He I (n=3 to 7)
1983
·
W. D. Perschmann
, G. Oppen
, et al.
·
The European Physical Journal A
·
15
The diffusion of holes in undoped amorphous Si :H
1982
·
B. Goldstein
, J. Dresner
, et al.
·
Philosophical Magazine B
·
14
Tensor polarizabilities of 1snd 1D levels in He I
1980
·
D. Szostak
, G. von Oppen
, et al.
·
Physics Letters A
·
14
Radiative lifetimes and tensor polarizabilities of 1s4f 1 F and 1s5f 1 F level of He I
1981
·
A. S. Aynacioglu
, G. v. Oppen
, et al.
·
The European Physical Journal A
·
13
Work function and Auger measurements of the initial oxidation of hydrogenated amorphous Si and of single-crystal Si
1978
·
Bernard Goldstein
, Daniel J. Szostak
·
Applied Physics Letters
·
13
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Works count:
39
Citation count:
1,270
H-index:
18
I10-index:
29
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