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Author

Chong Gao

ORCID: 0000-0002-8912-9403
Observed ORCID: 0000-0002-8912-9403
OpenAlex ID: A5064629324
High-Performance Solar-Blind Ultraviolet Photodetectors Based on β-Ga 2 O 3 Thin Films Grown on p -Si(111) Substrates with Improved Material Quality via an AlN Buffer Layer Introduced by Metal–Organic Chemical Vapor Deposition
2023 · Chong Gao, Yuefei Wang, et al. · ACS Applied Materials & Interfaces · 63
High-performance UV photodetector based on β-Ga2O3/GaN heterojunction prepared by a new route of reverse substitution growth
2024 · Yurui Han, Yuefei Wang, et al. · Journal of Material Science and Technology · 55
Rapid Response Solar Blind Deep UV Photodetector with High Detectivity Based On Graphene:N/βGa2O3:N/GaN p‐i‐n Heterojunction Fabricated by a Reversed Substitution Growth Method
2023 · Yurui Han, Yuefei Wang, et al. · Small Methods · 52
High Gain, Low Voltage Solar‐Blind Deep UV Photodetector Based on Ga 2 O 3 /(Al x Ga 1‐x ) 2 O 3 /GaN nBp Heterojunction
2025 · Yuefei Wang, Shihao Fu, et al. · Small · 50
Solar blind avalanche photodetector based on a n-β-Ga2O3/n-Si heterojunction via an introduction of AlN buffer layer for interface lattice and band Engineering
2024 · Chong Gao, Yuefei Wang, et al. · Materials Today Physics · 41
Thermal Annealing Restricts the Rotation Domains of Epitaxial β-Ga2O3 Thin Films on Off-Angle Sapphire Substrates, Enabling Ultrahigh-Sensitivity Solar-Blind Deep UV Photodetector
2025 · Weizhe Cui, Shihao Fu, et al. · ACS Applied Materials & Interfaces · 30
High-detectivity solar-blind deep UV photodetectors based on cubic/monoclinic mixed-phase (InxGa1−x)2O3 thin films
2023 · Kai Qi, Shihao Fu, et al. · Journal of Alloys and Compounds · 30
High-Sensitivity Solar-Blind Photodetector Based on β-Ga2O3 Schottky Junction Under Forward and Reverse Bias
2023 · Shihao Fu, Yuefei Wang, et al. · IEEE Electron Device Letters · 29
High-performance solar-blind photodetector of β-Ga2O3 grown on sapphire with embedding an ultra-thin AlN buffer layer
2024 · Zhe Wu, Yuefei Wang, et al. · Journal of Alloys and Compounds · 28
Al-Nanoparticle Sensitized β-Ga2O3-Based Solar-Blind Photodetector Fabricated via Focused Ion Beam Micro/Nano Processing
2023 · Shihao Fu, Yuefei Wang, et al. · IEEE Electron Device Letters · 20
Solar-blind deep UV photodetector based on β-Ga2O3/AlN/p-Si nBp tunneling photodiode for extreme temperature applications
2026 · Chong Gao, Yuefei Wang, et al. · Materials Today · 19
Deep Ultraviolet Photodetector with Ultrahigh Responsivity based on a Nitrogen‐Doped Graphene‐Modified Polypyrrole/SnO2 Organic/Inorganic p–n Heterojunction
2023 · Shihao Fu, Renjing Song, et al. · Advanced Materials Interfaces · 17
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High-performance solar-blind UV photodetector based on single p-type Cu-doped β-Ga2O3 microwire
2025 · Yan-Ming Wang, Xue Sui, et al. · Materials Science in Semiconductor Processing · 9
Performance optimization of self-powered deep ultraviolet photodetector based on PEDOT:PSS/SnO2 organic/inorganic p–n heterojunction by embedding a nitrogen-doped graphene
2023 · Shihao Fu, Renjing Song, et al. · Applied Physics Letters · 9
Preparation and photodetection performance of high crystalline quality and large size β-Ga2O3 microwires
2023 · Yuefei Wang, Yurui Han, et al. · Journal of Semiconductors · 6
Enhanced Ultra-narrowband Fast Response Ultraviolet Photodetector based on GaN Homojunction with a Carbon-Doped Semi-insulating Intermediate Layer
2025 · Shihao Fu, Danyang Xia, et al. · The Journal of Physical Chemistry Letters · 4
MOCVD-grown α-Ga2O3 with increased growth rate and improved crystal quality for deep UV optoelectronics application
2026 · Yujie Wang, Rongpeng Fu, et al. · Applied Physics Reviews · 3
High quality AlN thin films grown on sapphire substrate via interface defect strain engineering for vacuum UV photodetector application
2025 · Zhe Wu, Youheng Song, et al. · Applied Materials Today · 3
Self-powered p/Ga2O3/GaN p–i–n ultraviolet photodetector with a composite material made of polypyrrole (PPy) and nitrogen-doped graphene (PGr) as the P-region
2026 · Yurui Han, Ruize Gao, et al. · Applied Physics Reviews · 2
Two-zone temperature AlN buffer layer-assisted growth of high-quality AlN films with controllable step bunching morphology on Si (111) substrates
2026 · Youheng Song, Zhe Wu, et al. · Journal of Alloys and Compounds · 2
Plasma modification induced interface engineering enhanced GaN UV photodetectors with ultrahigh performance and bias-tuned selective response
2025 · Shihao Fu, Danyang Xia, et al. · Materials Today Physics · 2
Magnetically Programmable Hydrogel–Elastomer Composite for Engineering Controlled Equibiaxial Mechanical Microenvironments
2026 · Wei Gao, Yibin Mai, et al. · ACS Applied Materials & Interfaces
Works count: 22
Citation count: 473
H-index: 12
I10-index: 12
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