Get started
Author

Alexis C. Vilas-Bôas

Observed names: A C V Bôas, A. C. Vilas Bôas, A. C. Vilas-Bòas, A. C. Vilas-Bôas, A.C. Vilas-Bôas, A.C.V. Bôas, Alexis C Vilas Bôas, Alexis C. V. Boas, Alexis C. V. Bôas, Alexis C. Vilas Boas, Alexis C. Vilas Bôas, Alexis C. Vilas-Boas, Alexis Cristiano Vilas Bôas, Alexis V. Boas, Alexis Vilas Bôas
Observed institution: Centro Universitário FEI
ORCID: 0000-0002-5975-5518
Observed ORCID: 0000-0002-5975-5518
OpenAlex ID: A5064687598
Ionizing radiation hardness tests of GaN HEMTs for harsh environments
2020 · Alexis C. Vilas Bôas, M.A.A. de Melo, et al. · Microelectronics Reliability · 44
Radiation Hardness of GaN HEMTs to TID Effects: COTS for harsh environments
2019 · Alexis C. Vilas Boas, M. A. A. de Melo, et al. · European Conference on Radiation and Its Effects on Components and Systems · 15
Effects of neutron radiation on the thermal conductivity of highly oriented pyrolytic graphite
2024 · M.A. Guazzelli, L.H. Avanzi, et al. · Diamond and Related Materials · 12
PDF
On the Vulnerability of UMOSFETs in Terrestrial Radiation Environments
2025 · Saulo G. Alberton, Alexis C. V. Bôas, et al. · IEEE Access · 8
Assessment of Ionizing Radiation Hardness of a GaN Field-Effect Transistor
2019 · Alexis C. Vilas Boas, M. A. A. de Melo, et al. · Symposium on Microelectronics Technology and Devices · 8
Single-Event Effects Induced by Monoenergetic Fast Neutrons in Silicon Power UMOSFETs
2025 · Saulo G. Alberton, Alexis C. Vilas-Bôas, et al. · IEEE Transactions on Device and Materials Reliability · 6
PDF
Reliability analysis of gamma- and X-ray TID effects, on a commercial AlGaN/GaN based FET
2021 · Alexis Cristiano Vilas Bôas, Saulo Gabriel Alberton, et al. · Journal of Integrated Circuits and Systems · 6
PDF
Ionizing radiation effects in a rectifier circuit
2019 · A C V Bôas, M A Guazzelli, et al. · Journal of Physics Conference Series · 6
PDF
Alpha Particle- and Neutron-Induced Single-Event Effects in COTS Power FETS
2022 · Saulo G. Alberton, Alexis C. V. Bôas, et al. · European Conference on Radiation and Its Effects on Components and Systems · 5
Modeling of MOSFETs Altered by Ionizing Radiation Using Artificial Neural Networks
2023 · Lucas S. A. dos Santos, Paula R. P. Allegro, et al. · Brazilian Journal of Physics · 4
Neutron-Induced Radiation Effects in UMOS Transistor
2022 · S G Alberton, A C V Bôas, et al. · Journal of Physics Conference Series · 4
PDF
Ion-Induced Charge and Single-Event Burnout in Silicon Power UMOSFETs
2025 · Saulo G. Alberton, Vitor A. P. Aguiar, et al. · Electronics · 3
PDF
Ionizing Radiation Hardness Characterization of GaN HEMTs Depends on the Radiation Source
2022 · A.C.V. Bôas, S.G. Alberton, et al. · European Conference on Radiation and Its Effects on Components and Systems · 3
Testing a Fault Tolerant Mixed-Signal Design Under TID and Heavy Ions
2021 · Carlos J Gonzalez, Diego Machado, et al. · Journal of Integrated Circuits and Systems · 3
PDF
Estudo de transistores de potência de alta mobilidade eletrônica baseados em GaN: tolerância aos efeitos da radiação Ionizante
2025 · Alexis Vilas Bôas · 2
PDF
Neutron-induced effects on a commercial GaN High Electron Mobility Transistor
2024 · Alexis Cristiano Vilas Bôas, Saulo Gabriel Alberton, et al. · Symposium on Microelectronics Technology and Devices · 2
Comparing Rectangular and ELT MOSFET layouts under TID
2023 · Paulo R. Garcia, Guilherme I Grandesi, et al. · Symposium on Microelectronics Technology and Devices · 2
COTS Tolerant to Total Ionizing Dose (TID): AlGaN/GaN-based transistor 10 KeV X-ray Analysis
2022 · A.C.V. Bôas, S.G. Alberton, et al. · Journal of Physics Conference Series · 2
PDF
Failure Mechanism and Sampling Frequency Dependency on TID Response of SAR ADCs
2021 · Carlos J. González, Bruno L. Costa, et al. · Journal of Electronic Testing · 2
Evaluation of LGAD Performance Degradation due to TID Aging Under 10 keV X-ray Irradiation
2025 · T. A. Silva, A. C. Vilas-Bôas, et al. · RADECS Data Workshop · 1
Exploring Fault Tolerance to Ionizing Radiation in Severe Environments: Power Transistors with Distinct Layouts
2025 · Paulo R. Garcia, Guilherme I Grandesi, et al. · IEEE Latin American Symposium on Circuits and Systems (LASCAS) · 1
Impact of Ionizing Radiation and Temperature on the Performance of pMOSFETs with Different Layouts
2024 · Guilherme Inácio Grandesi, Paulo R. Garcia, et al. · Symposium on Microelectronics Technology and Devices · 1
Impact of terrestrial cosmic radiation on modern information processing: from transistors to qubits
2026 · Saulo G. Alberton, Alexis C. Vilas-Bôas, et al. · Symposium on Microelectronics Technology and Devices
Trade-offs in Radiation Predictability: A Comparative Analysis of ELT and Rectangular Power Transistors Layouts
2026 · Paulo R. G. Junior, Alexis C. V. Bôas, et al. · Symposium on Microelectronics Technology and Devices
Resilience of the physicochemical properties of graphene-based materials for applications in harsh radiation environments
2026 · M.A. Guazzelli, S.G. Alberton, et al. · Diamond and Related Materials
Works count: 33
Citation count: 140
H-index: 6
I10-index: 3
Year
Topic
Type