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Исмаил-Заде Мамед Рашидович

Observed names: M. R. Ismail-Zade, M.R. Ismail-Zade, M.R. Ismail-zade, Mamed Ismail-Zade, Mamed Ismail-zade, Mamed R. Ismail-Zade, Mamed R. Ismail-zade, Исмаил-Заде М.Р., М.Р. Исмаил-Заде
ORCID: 0000-0002-2146-0642
Observed ORCID: 0000-0002-2146-0642
OpenAlex ID: A5064811812
Automation of parameter extraction procedure for Si JFET SPICE model in the −200…+110°C temperature range
2018 · Konstantin O. Petrosyants, Mamed R. Ismail-zade, et al. · Moscow Workshop on Electronic and Networking Technologies (MWENT) · 17
SPICE Compact BJT, MOSFET, and JFET Models for ICs Simulation in the Wide Temperature Range (From −200 °C to +300 °C)
2020 · Konstantin O. Petrosyants, Lev M. Sambursky, et al. · IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems · 16
Analysis of SEU effects in MOSFET and FinFET based 6T SRAM Cells
2022 · Konstantin O. Petrosyants, Denis S. Silkin, et al. · Moscow Workshop on Electronic and Networking Technologies (MWENT) · 10
High temperature submicron SOI CMOS technology characterization for analog and digital applications up to 300°C
2017 · Konstantin O. Petrosyants, Sergey V. Lebedev, et al. · Annual IEEE Semiconductor Thermal Measurement and Management Symposium/Proceedings · 7
Complex for automated measurement and processing of BJTs and MOSFETs characteristics for extremal applications
2016 · Konstantin O. Petrosyants, Igor A. Kharitonov, et al. · International Siberian Conference on Control and Communications · 5
TCAD and SPICE Models for Account of Radiation Effects in Nanoscale MOSFET Structures
2020 · K.O. Petrosyants, D.A. Popov, et al. · Problems of advanced micro- and nanoelectronic systems development · 3
Hardware-software system for automation of characteristics measurement of SOI CMOS VLSI elements under extreme high temperature conditions (up to 300°C)
2017 · Mamed R. Ismail-zade, Aleksandr Y. Romanov, et al. · IEEE Conference of Russian Young Researchers in Electrical and Electronic Engineering · 3
Compact Si JFET model for cryogenic temperature
2020 · Konstantin O. Petrosyants, Mamed R. Ismail-zade, et al. · Cryogenics · 2
Highlights of JFET I-V Characteristics Simulation in Cryogenic Temperature Range
2019 · Konstantin O. Petrosyants, Mamed R. Ismail-Zade, et al. · Proceedings of Universities ELECTRONICS · 2
Generalized test automation method for MOSFET's including characteristics measurements and model parameters extraction for aero-space applications
2017 · Konstantin O. Petrosyants, Lev M. Sambursky, et al. · IEEE East-West Design & Test Symposium (EWDTS) · 2
Compact SPICE Models of Sub-100 nm FDSOI and FinFET Devices in the Wide Temperature Range (-269°C … + 300°C)
2022 · Konstantin O. Petrosyants, Mamed R. Ismail-zade, et al. · International Workshop on Thermal Investigations of ICs and Systems · 1
Подсистема Tcad- И Spice-моделирования Элементов Кремниевых Бис С Учетом Влияния Температуры, Радиации И Старения
2022 · К.О. Петросянц, М.Р. Исмаил-Заде, et al. · Nanoindustry Russia · 1
Early Study of Transistor and Circuit Parameter Variation for 180 nm High-Temperature SOI CMOS Production Technology
2020 · Lev M. Sambursky, Mamed R. Ismail-zade, et al. · Moscow Workshop on Electronic and Networking Technologies (MWENT) · 1
Prediction of High-Temperature Operation (up to +300°C) of Reference Voltage Source Built with Temperature-Tolerant Production Technology
2018 · Lev M. Sambursky, Dmitry A. Parfenov, et al. · IEEE East-West Design & Test Symposium (EWDTS) · 1
SPICE-Models of Field-Effect Transistors with MOSFET and JFET Structures in the Temperature Range down to –200°C
2018 · K.O. Petrosyants, M.R. Ismail-zade, et al. · Problems of advanced micro- and nanoelectronic systems development · 1
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SPICE Modeling of GaN HEMTs in the Wide Temperature Range $(-269^{\circ}\mathrm{C}\ldots+500^{\circ}\mathrm{C})$
2025 · Konstantin O. Petrosyants, Mamed R. Ismail-Zade, et al. · International Workshop on Thermal Investigations of ICs and Systems
Features of TCAD and SPICE Simulation of a Charged Particle Impact into a 6T SRAM Cell Manufactured Using the CMOS 28-nm Technology Node
2024 · K. O. Petrosyants, D. S. Silkin, et al. · Russian Microelectronics
JFET and MOSFET SPICE Models in a Wide Temperature Range
2021 · M. R. Ismail-Zade · Russian Microelectronics
Investigation of the Possibilities of Using Various Industrial Extractors to Determine the Spice Model Parameters of Submicron Mosfets in the Temperature Range up to +300°c
2021 · Konstantin Petrosyants, Mamed Ismail-zade, et al. · International Conference on Mathematical Modeling in Materials Science of Electronic Components (MMMSEC)
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Оценка Эффективности Применения Различных Промышленных Экстракторов Для Определения Параметров Spice-моделей Субмикронных Моп-транзисторов
2021 · М.Р. Исмаил-Заде · Nanoindustry Russia
Spice-модели Для Учета Радиационных И Низкотемпературных Эффектов В Суб-100-нм Моп-транзисторных Структурах
2020 · К.О. Петросянц, М.Р. Исмаил-Заде, et al. · Nanoindustry Russia
The Special Features of Simulation of the Current–Voltage Characteristics of JFETs in the Cryogenic Temperature Range
2020 · K. O. Petrosyants, M. R. Ismail-Zade, et al. · Russian Microelectronics
SPICE Modeling of Small-Size Bulk, SOI and SOS MOSFETs at Deep-Cryogenic Temperatures
2020 · Mamed R. Ismail-zade, Konstantin O. Petrosyants, et al. · International Workshop on Thermal Investigations of ICs and Systems
Spice Models of Sub-micron Cmos Mosfets in the Cryogenic Temperature Range
2020 · Mamed Ismail-Zade, Lev Sambursky · International Forum “Microelectronics – 2020”. Joung Scientists Scholarship “Microelectronics – 2020”. XIII International conference «Silicon – 2020». XII young scientists scholarship for silicon nanostructures and devices physics, material science, process and analysis
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JFET and MOSFET Spice Models in Wide Temperature Range
2020 · M.R. Ismail-Zade · Proceedings of Universities ELECTRONICS
Works count: 30
Citation count: 72
H-index: 5
I10-index: 3
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