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Shuichi Kuboi

Observed name: S. Kuboi
ORCID: 0009-0005-5316-162X
Observed ORCID: 0009-0005-5316-162X
OpenAlex ID: A5064885264
High aspect ratio SiO2/SiN (ON) stacked layer etching using C3HF5, C4H2F6, and C4H4F6
2024 · C. Abe, T. Sasaki, et al. · Japanese Journal of Applied Physics · 14
Analysis of formation mechanism of deposited film in a high-aspect-ratio hole during dry etching using fluorocarbon gas plasmas
2022 · Noboru Hiwasa, Junji Kataoka, et al. · Applied Physics Express · 14
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Mass spectroscopic measurement of time-varying ion composition in a pulse-modulated Ar/C4F8/O2 dual-frequency capacitively coupled plasma
2023 · Shuichi Kuboi, Haruhito Kato, et al. · Japanese Journal of Applied Physics · 10
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Phenomenological model for predicting C x H y F z + ion etching yields of SiO2 and SiN x substrates
2023 · Akiko Kawamoto, Junji Kataoka, et al. · Japanese Journal of Applied Physics · 6
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Influence of bias voltage on the Ar/CH 2 F 2 /O 2 plasma etching of Si 3 N 4 films
2024 · Shuichi Kuboi, Junji Kataoka, et al. · Japanese Journal of Applied Physics · 5
Infinite selectivity in dry etching process for high-aspect-ratio hole using C7HF7 gas plasma
2025 · Junji Kataoka, Norikatsu Sasao, et al. · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 2
Time-varying mechanism of ion composition in a pulse-modulated Ar/C4F8/O2 dual-frequency capacitively coupled plasma
2023 · Shuichi Kuboi, Haruhito Kato, et al. · Japanese Journal of Applied Physics · 2
Investigation of plasma-induced damage in silicon trench etching
2016 · Shuichi Kuboi, Masashi Yamage, et al. · IEEE International Symposium on Semiconductor Manufacturing conference proceedings · 1
The effect of reactive fluorocarbon species on high aspect ratio etching
2020 · Satoshi Tanida, Daiki Iino, et al. · The Japan Society of Applied Physics
Investigation of plasma-induced damage in silicon trench structures
2016 · Shuichi Kuboi, Masashi Yamage, et al. · The Japan Society of Applied Physics
Works count: 10
Citation count: 54
H-index: 5
I10-index: 3
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