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Roman Izmailov

Observed names: Izmailov, Roman, R. Izmailov, R.A. Izmailov, Roman A. Izmailov
Institution: IMEC
ORCID: 0000-0003-1876-647X
Observed ORCID: 0000-0003-1876-647X
OpenAlex ID: A5065130460
Defect profiling in FEFET Si:HfO2 layers
2020 · B. J. O'Sullivan, V. Putcha, et al. · Applied Physics Letters · 36
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Electron trapping in ferroelectric HfO2
2021 · Roman A. Izmailov, Jack W. Strand, et al. · Physical Review Materials · 33
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Improved Capacitive Memory Window for Non-Destructive Read in HZO-Based Ferroelectric Capacitors with Incorporation of Semiconducting IGZO
2024 · S. Mukherjee, J. Bizindavyi, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 14
Electron emission from deep traps in HfO2 under thermal and optical excitation
2024 · Roman Izmailov, Jack Strand, et al. · Physical review. B./Physical review. B · 13
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Novel Design Strategy for High-Endurance $(> 10^{10})$ and Fast-Erase Oxide-Semiconductor Channel FeFET
2024 · Zhuo Chen, Hyun-Cheol Kim, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 10
Gate Side Injection Operating Mode for 3D NAND Flash Memories
2024 · L. Breuil, R. Izmailov, et al. · IEEE International Memory Workshop (IMW) · 9
A Theoretical Analysis of Ferroelectric Switching Physics in Metal/Ferroelectric/IGZO Stack Toward Interlayer-Free FeFETs
2024 · Zhuo Chen, Nicolò Ronchi, et al. · IEEE Electron Device Letters · 8
Deep electron traps in HfO2-based ferroelectrics: (Al/Si-doped) HfO2 versus HfZrO4
2022 · R.A. Izmailov, B.J. O'Sullivan, et al. · Solid-State Electronics · 7
Understanding the Slow Erase Operation in IGZO-Channel FeFETs: The Role of Positive Charge Generation Kinetics
2025 · Zhuo Chen, Nicolò Ronchi, et al. · IEEE Journal of the Electron Devices Society · 5
Plasma Etch of IGZO Thin Film and IGZO/SiO2 Interface Diffusion in Inductively Coupled CH4/Ar Plasmas
2024 · Jie Li, Shreya Kundu, et al. · Plasma Processes and Polymers · 5
Understanding the Time Dependent Write and Read Performance of IGZO-channel FeFETs
2024 · Zhuo Chen, Nicolò Ronchi, et al. · 5
Shallow electron traps in high-k insulating oxides
2021 · R.A. Izmailov, B.J. O'Sullivan, et al. · Solid-State Electronics · 3
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First Demonstration of 3D Stacked FeFET Memory Devices with Vertical IGZO Channel-Last Process for Dense Non-Volatile Memory
2024 · Roman Izmailov, Nicolò Ronchi, et al. · International Conference on Solid State Devices and Materials (SSDM) · 1
Vertically Stacked Five-Word-Line IGZO FeFETs with Dual-Gate-Enabled Stable Erase Toward High-Bandwidth Storage
2026 · Zhuo Chen, Nicolò Ronchi, et al. · IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)
3D Charge Coupled Device for High-Density and Cost-Efficient Buffer Memory
2026 · Rishabh Kishore, Swaraj Bandhu Mahato, et al. · IEEE International Memory Workshop (IMW)
Electron trapping in ferroelectric HfZrO4 and Al- and Si-doped layers
2021 · R.A. Izmailov, B.J. O'Sullivan, et al. · Solid-State Electronics
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Works count: 17
Citation count: 149
H-index: 7
I10-index: 5
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