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Juanita Bocquel

Atomic scale analysis of self assembled GaAs/AlGaAs quantum dots grown by droplet epitaxy
2010 · J. G. Keizer, J. Bocquel, et al. · Applied Physics Letters · 69
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Spatial metrology of dopants in silicon with exact lattice site precision
2016 · M. Usman, J. Bocquel, et al. · Nature Nanotechnology · 54
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Size-dependent line broadening in the emission spectra of single GaAs quantum dots: Impact of surface charge on spectral diffusion
2015 · Neul Ha, Takaaki Mano, et al. · Physical Review B · 48
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Precise shape engineering of epitaxial quantum dots by growth kinetics
2015 · Sergio Bietti, Juanita Bocquel, et al. · Physical Review B · 45
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Valley interference and spin exchange at the atomic scale in silicon
2020 · B. Voisin, J. Bocquel, et al. · Nature Communications · 33
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Valley interference and spin exchange at the atomic scale in silicon
· B. Voisin, J. Bocquel, et al. · RePEc: Research Papers in Economics · 27
Temperature-Dependent Photophysics of Single NV Centers in Diamond
2023 · Jodok Happacher, Juanita Bocquel, et al. · Physical Review Letters · 26
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Low-Temperature Photophysics of Single Nitrogen-Vacancy Centers in Diamond
2022 · Jodok Happacher, David A. Broadway, et al. · Physical Review Letters · 26
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Spin-dependent photodynamics of boron-vacancy centers in hexagonal boron nitride
2024 · T. Clua-Provost, Z. Mu, et al. · Physical review. B./Physical review. B · 25
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Two-electron states of a group-V donor in silicon from atomistic full configuration interactions
2018 · Archana Tankasala, Joseph Salfi, et al. · Physical review. B./Physical review. B · 24
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Spatially resolved resonant tunneling on single atoms in silicon
2015 · B Voisin, J Salfi, et al. · Journal of Physics Condensed Matter · 23
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Donor hyperfine Stark shift and the role of central-cell corrections in tight-binding theory
2015 · Muhammad Usman, Rajib Rahman, et al. · Journal of Physics Condensed Matter · 23
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Valley Filtering in Spatial Maps of Coupling between Silicon Donors and Quantum Dots
2018 · J. Salfi, B. Voisin, et al. · Physical Review X · 20
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Core-state manipulation of single Fe impurities in GaAs with a scanning tunneling microscope
2013 · J. Bocquel, V. R. Kortan, et al. · Physical Review B · 19
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Donor wave functions in Si gauged by STM images
2016 · A. L. Saraiva, J. Salfi, et al. · Physical review. B./Physical review. B · 18
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Composition profiling of GaAs/AlGaAs quantum dots grown by droplet epitaxy
2014 · J. Bocquel, A. D. Giddings, et al. · Applied Physics Letters · 15
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Shape control of quantum dots studied by cross-sectional scanning tunneling microscopy
2011 · J. G. Keizer, M. Bozkurt, et al. · Journal of Applied Physics · 15
Charge Stability and Charge-State-Based Spin Readout of Shallow Nitrogen-Vacancy Centers in Diamond
2023 · Rakshyakar Giri, Rasmus Ho̷y Jensen, et al. · ACS Applied Electronic Materials · 14
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Sensing of magnetic field effects in radical-pair reactions using a quantum sensor
2024 · Deepak Khurana, Rasmus H. Jensen, et al. · Physical Review Research · 9
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Magnetic Field Mapping Around Individual Magnetic Nanoparticle Agglomerates Using Nitrogen‐Vacancy Centers in Diamond
2021 · Filipe Camarneiro, Juanita Bocquel, et al. · Particle & Particle Systems Characterization · 9
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CdSe quantum dots in ZnSe nanowires as efficient source for single photons up to 220K
2008 · Thomas Aichele, Adrien Tribu, et al. · Journal of Crystal Growth · 9
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A Probabilistic Finite State Logic Machine Realized Experimentally on a Single Dopant Atom
2017 · Barbara Fresch, Juanita Bocquel, et al. · Nano Letters · 7
Mn doped InSb studied at the atomic scale by cross-sectional scanning tunneling microscopy
2015 · S. J. C. Mauger, J. Bocquel, et al. · Applied Physics Letters · 6
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Implementation of Multivariable Logic Functions in Parallel by Electrically Addressing a Molecule of Three Dopants in Silicon
2017 · Barbara Fresch, Juanita Bocquel, et al. · ChemPhysChem · 5
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Observation of the symmetry of core states of a single Fe impurity in GaAs
2017 · J. Bocquel, V. R. Kortan, et al. · Physical review. B./Physical review. B · 3
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Works count: 41
Citation count: 581
H-index: 15
I10-index: 18
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