Author

Rajan Biswas

Observed names: Biswas, Rajan, R. Biswas, Rajan Biswas

Institution: University of St Andrews

Observed institutions: University of Vienna, TU Wien, Indian Institute of Technology Bombay, University of St Andrews, Christian Doppler Laboratory for Thermoelectricity, Indian Institute of Science Bangalore

ORCID: 0000-0002-3350-266X

Observed ORCID: 0000-0002-3350-266X

OpenAlex ID: A5065576885

Ultralow thermal conductivity and low charge carrier scattering potential in Zn1-xCdxSb solid solutions for thermoelectric application

2019 · R. Biswas, S. Mukherjee, et al. · Materials Today Energy · 22

Thermoelectric properties of Al substituted tetrahedrite

2020 · Sahil Tippireddy, Sanyukta Ghosh, et al. · Journal of Applied Physics · 17

Influence of zinc content and grain size on enhanced thermoelectric performance of optimally doped ZnSb

2021 · Rajan Biswas, Satish Vitta, et al. · Materials Research Bulletin · 11

Alloying and Doping Control in the Layered Metal Phosphide Thermoelectric CaCuP

2023 · Robert J. Quinn, Rajan Biswas, et al. · ACS Applied Electronic Materials · 10

Vacancy induced anomalies in the electrical transport properties of Ag-doped Zn1−xCdxSb (x = 0.375) solid solutions

2022 · Rajan Biswas, Velaga Srihari, et al. · Applied Physics Letters · 5

Enhanced Thermoelectric Performance in Zn1–xCdxSb (x = 0–0.375) Solid Solutions by Dynamic Optimization of Charge Carrier Concentration

2022 · Rajan Biswas, Pankaj K. Patro, et al. · ACS Applied Energy Materials · 3

Thermoelectric properties and Kondo transition in the pseudo‐gap metals TiNiSi and TiNiGe

2023 · Ruth A. Downie, Blair F. Kennedy, et al. · Zeitschrift für anorganische und allgemeine Chemie

Works count: 11

Citation count: 68

H-index: 5

I10-index: 4