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Max Kneiß
Observed names:
Kneiss, Max,
Kneiß, Max,
M. Kneiß,
Max Kneiss
Institution:
Leipzig University
Observed institutions:
United States Naval Research Laboratory,
University of Florida,
Arizona State University,
Leipzig University
ORCID:
0000-0002-8350-7346
Observed ORCID:
0000-0002-8350-7346
OpenAlex ID:
A5066056154
Transparent flexible thermoelectric material based on non-toxic earth-abundant p-type copper iodide thin film
2017
·
C. Yang
, D. Souchay
, et al.
·
Nature Communications
·
386
PDF
Tin-assisted heteroepitaxial PLD-growth of κ-Ga2O3 thin films with high crystalline quality
2018
·
M. Kneiß
, A. Hassa
, et al.
·
APL Materials
·
163
Room-temperature Domain-epitaxy of Copper Iodide Thin Films for Transparent CuI/ZnO Heterojunctions with High Rectification Ratios Larger than 109
2016
·
Chang Yang
, Max Kneiß
, et al.
·
Scientific Reports
·
130
PDF
Heteroepitaxial growth of α-, β-, γ- and κ-Ga2O3 phases by metalorganic vapor phase epitaxy
2019
·
Volker Gottschalch
, Stefan Merker
, et al.
·
Journal of Crystal Growth
·
94
Epitaxial stabilization of single phase κ -(In x Ga1− x )2O3 thin films up to x = 0.28 on c-sapphire and κ -Ga2O3(001) templates by tin-assisted VCCS-PLD
2019
·
M. Kneiß
, A. Hassa
, et al.
·
APL Materials
·
53
Epitaxial κ-(AlxGa1−x)2O3 thin films and heterostructures grown by tin-assisted VCCS-PLD
2019
·
P. Storm
, M. Kneiß
, et al.
·
APL Materials
·
46
Structural, optical, and electrical properties of orthorhombic κ-(InxGa1−x)2O3 thin films
2019
·
A. Hassa
, H. von Wenckstern
, et al.
·
APL Materials
·
46
PDF
Realization of highly rectifying Schottky barrier diodes and pn heterojunctions on κ-Ga2O3 by overcoming the conductivity anisotropy
2021
·
M. Kneiß
, D. Splith
, et al.
·
Journal of Applied Physics
·
42
PDF
PLD of α-Ga2O3 on m-plane Al2O3: Growth regime, growth process, and structural properties
2023
·
Clemens Petersen
, Sofie Vogt
, et al.
·
APL Materials
·
41
PDF
A Review of the Segmented‐Target Approach to Combinatorial Material Synthesis by Pulsed‐Laser Deposition
2019
·
Holger von Wenckstern
, Max Kneiß
, et al.
·
physica status solidi (b)
·
41
PDF
Solubility limit and material properties of a κ-(AlxGa1−x)2O3 thin film with a lateral cation gradient on (00.1)Al2O3 by tin-assisted PLD
2020
·
A. Hassa
, C. Sturm
, et al.
·
APL Materials
·
35
PDF
Control of phase formation of (AlxGa1 − x)2O3 thin films on c-plane Al2O3
2020
·
Anna Hassa
, Charlotte Wouters
, et al.
·
Journal of Physics D Applied Physics
·
33
PDF
Growth, structural and optical properties of coherent κ-(AlxGa1−x)2O3/κ-Ga2O3 quantum well superlattice heterostructures
2020
·
M. Kneiß
, P. Storm
, et al.
·
APL Materials
·
32
Suppression of Grain Boundary Scattering in Multifunctional p‐Type Transparent γ‐CuI Thin Films due to Interface Tunneling Currents
2018
·
Max Kneiß
, Chang Yang
, et al.
·
Advanced Materials Interfaces
·
32
Modeling the electrical transport in epitaxial undoped and Ni-, Cr-, and W-doped TiO2 anatase thin films
2014
·
Max Kneiß
, Marcus Jenderka
, et al.
·
Applied Physics Letters
·
29
Structural and Elastic Properties of α‐(Al x Ga 1− x ) 2 O 3 Thin Films on (11.0) Al 2 O 3 Substrates for the Entire Composition Range
2020
·
Anna Hassa
, Philipp Storm
, et al.
·
physica status solidi (b)
·
25
Band Offsets at κ-([Al,In]xGa1–x)2O3/MgO Interfaces
2020
·
Thorsten Schultz
, Max Kneiß
, et al.
·
ACS Applied Materials & Interfaces
·
25
Strain states and relaxation for $$\alpha$$-(Al$$_x$$Ga$$_{1-x}$$)$$_2$$O$$_3$$ thin films on prismatic planes of $$\alpha$$-Al$$_2$$O$$_3$$ in the full composition range: Fundamental difference of a- and m-epitaxial planes in the manifestation of shear strain and lattice tilt
2021
·
Max Kneiß
, Daniel Splith
, et al.
·
Journal of materials research/Pratt's guide to venture capital sources
·
24
PDF
Realization of Conductive n‐Type Doped α‐Ga2O3 on m‐Plane Sapphire Grown by a Two‐Step Pulsed Laser Deposition Process
2022
·
Sofie Vogt
, Clemens Petersen
, et al.
·
physica status solidi (a)
·
22
PDF
Combinatorial Material Science and Strain Engineering Enabled by Pulsed Laser Deposition Using Radially Segmented Targets
2018
·
Max Kneiß
, Philipp Storm
, et al.
·
ACS Combinatorial Science
·
22
Valence band offsets for ALD SiO2 and Al2O3 on (InxGa1−x)2O3 for x = 0.25–0.74
2019
·
Chaker Fares
, Max Kneiß
, et al.
·
APL Materials
·
20
Epitaxial growth of rhombohedral β- and cubic γ-CuI
2021
·
Volker Gottschalch
, Gabriele Benndorf
, et al.
·
Journal of Crystal Growth
·
16
Epitaxial Growth of κ‐(AlxGa1−x)2O3 Layers and Superlattice Heterostructures up to x = 0.48 on Highly Conductive Al‐Doped ZnO Thin‐Film Templates by Pulsed Laser Deposition
2020
·
Max Kneiß
, Philipp Storm
, et al.
·
physica status solidi (b)
·
14
PDF
Band Alignment of Atomic Layer Deposited SiO2 and Al2O3 on (AlxGa1-x)2O3 for x = 0.2-0.65
2019
·
Chaker Fares
, Max Kneiß
, et al.
·
ECS Journal of Solid State Science and Technology
·
14
PDF
Highly transparent conductors for optical and microwave access to spin-based quantum systems
2019
·
Robert Staacke
, Roger John
, et al.
·
npj Quantum Information
·
12
PDF
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Works count:
47
Citation count:
1,463
H-index:
20
I10-index:
26
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