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Joonas Leppänen

Observed names: J. Leppänen, Joonas A. R. Leppanen, Joonas A. R. Leppänen, Joonas Leppanen, Leppänen, Joonas
Institution: ABB (Finland)
Observed institutions: ABB (Finland), Aalto University
ORCID: 0000-0002-1961-1181
Observed ORCID: 0000-0002-1961-1181
OpenAlex ID: A5066268623
A humidity-induced novel failure mechanism in power semiconductor diodes
2021 · J. Leppänen, G. Ross, et al. · Microelectronics Reliability · 27
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Aluminium corrosion in power semiconductor devices
2022 · J. Leppänen, J. Ingman, et al. · Microelectronics Reliability · 13
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A facility for mixed flowing gas testing of and experimentation with power electronic components and systems
2020 · Juuso Rautio, Janne Jappinen, et al. · European Conference on Power Electronics and Applications · 8
Cyclic temperature and humidity profile for mixed flowing gas tests of power semiconductor modules
2023 · J. Rautio, T. J. Kärkkäinen, et al. · International Conference on Power Electronics and ECCE Asia (ICPE-ECCE Asia) · 6
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Reliability of Power Modules in Corrosive Environments: Effect of Heating on Dendritic Corrosion Growth in the Isolation Trenches
2025 · Juuso Rautio, Tommi J. Kärkkäinen, et al. · IET Power Electronics · 5
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Detection of Corrosion in Thick Film Resistors by X-Ray Imaging
2021 · Jonny M. Ingman, Joni P. A. Jormanainen, et al. · IEEE Access · 4
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Humidity Related Failure Mechanisms in Power Semiconductor Devices
2017 · Joonas Leppänen · 3
Early Detection of Wire Bond Degradation in IGBT Modules Using On-Chip Junction Temperature Sensor
2025 · Joonas A. R. Leppänen, Atte L. J. Hoffrén, et al. · IEEE Transactions on Power Electronics · 2
Impeding Dendritic Corrosion in Silicone Gel Potted Power Module Isolation Trenches by Heating
2025 · Juuso Rautio, Tommi J. Kärkkäinen, et al. · IET Power Electronics · 2
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Multiphysics Simulations for IGBT Power Semiconductor Module Cooling
2025 · Péter Pálovics, Eeli Kerttula, et al. · International Workshop on Thermal Investigations of ICs and Systems · 1
Life Cycle Assessment as an Eco-Design Tool in Power Electronics: A Case Study of 1.2 kV Si IGBT vs SiC MOSFET Modules in Motor Drive Inverter
2025 · Mostafa Radwan, Hossein Sadegh Lafmejani, et al. · Energy Conversion Congress and Expo Europe (ECCE Europe) · 1
Kosteuteen liittyviä tehopuolijohdekomponenttien vikamekanismeja
2017 · Leppänen, Joonas · Aaltodoc (Aalto University)
IGBT-vaihtosuuntaajan yleisimpien vauriomekanismien analysointi taajuusmuuttajakäytössä
2014 · Joonas Leppänen · Aaltodoc (Aalto University)
Works count: 13
Citation count: 72
H-index: 5
I10-index: 2
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