Author

Subhash S. Pidaparthi

Observed names: Pidaparthi, Subhash, S. Pidaparthi, Subhash Pidaparthi

Observed institution: University of Notre Dame

ORCID: 0000-0002-6432-5010

Observed ORCID: 0000-0002-6432-5010

OpenAlex ID: A5066395291

1.2-kV Vertical GaN Fin-JFETs: High-Temperature Characteristics and Avalanche Capability

2021 · Jingcun Liu, Ming Xiao, et al. · IEEE Transactions on Electron Devices · 135

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1.2 kV Vertical GaN Fin JFETs with Robust Avalanche and Fast Switching Capabilities

2020 · J. Liu, M. Xiao, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 91

Surge Current and Avalanche Ruggedness of 1.2-kV Vertical GaN p-n Diodes

2021 · Jingcun Liu, Ruizhe Zhang, et al. · IEEE Transactions on Power Electronics · 74

Trap-Mediated Avalanche in Large-Area 1.2 kV Vertical GaN p-n Diodes

2020 · Jingcun Liu, Ming Xiao, et al. · IEEE Electron Device Letters · 62

Breakthrough Short Circuit Robustness Demonstrated in Vertical GaN Fin JFET

2021 · Ruizhe Zhang, Jingcun Liu, et al. · IEEE Transactions on Power Electronics · 51

Dynamic R ON Free 1.2-kV Vertical GaN JFET

2023 · Xin Yang, Ruizhe Zhang, et al. · IEEE Transactions on Electron Devices · 36

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Robust Through-Fin Avalanche in Vertical GaN Fin-JFET With Soft Failure Mode

2022 · Ruizhe Zhang, Jingcun Liu, et al. · IEEE Electron Device Letters · 34

Evaluation and MHz Converter Application of 1.2-kV Vertical GaN JFET

2024 · Xin Yang, Ruizhe Zhang, et al. · IEEE Transactions on Power Electronics · 30

Tuning Avalanche Path in Vertical GaN JFETs By Gate Driver Design

2021 · Jingcun Liu, Ruizhe Zhang, et al. · IEEE Transactions on Power Electronics · 26

Exponentially Adiabatic Switching in Quantum-Dot Cellular Automata

2018 · Subhash S. Pidaparthi, Craig S. Lent · Journal of Low Power Electronics and Applications · 22

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Vertical GaN Fin JFET: A Power Device with Short Circuit Robustness at Avalanche Breakdown Voltage

2022 · R. Zhang, J. Liu, et al. · IEEE International Reliability Physics Symposium proceedings · 14

Evaluation of Dynamic RON, Coss Loss, and Short-Circuit Ruggedness of 650V and 1200V Industrial Vertical GaN JFETs

2024 · Xin Yang, Qihao Song, et al. · IEEE International Symposium on Power Semiconductor Devices and ICs/Proceedings of the International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices and ICs · 13

Energy dissipation during two-state switching for quantum-dot cellular automata

2021 · Subhash S. Pidaparthi, Craig S. Lent · Journal of Applied Physics · 13

Switching Performance Evaluation of 650 V Vertical GaN Fin JFET

2023 · R. Zhang, Q. Yang, et al. · Conference proceedings/Conference proceedings - IEEE Applied Power Electronics Conference and Exposition · 12

Molecular reorganization energy in quantum-dot cellular automata switching

2022 · Subhash S. Pidaparthi, Craig S. Lent · Journal of Applied Physics · 10

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Exceptional Repetitive-Short-Circuit Robustness of Vertical GaN Fin-JFET at High Voltage

2022 · R. Zhang, J. Liu, et al. · IEEE International Symposium on Power Semiconductor Devices and ICs/Proceedings of the International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices and ICs · 9

Application of 1.2kV Vertical GaN JFET in MHz Buck Converter

2024 · Xin Yang, Qiuzhe Yang, et al. · IEEE Energy Conversion Congress and Exposition (ECCE) · 2

Switching of a Bus Voltage of 1400 V at 10 MHz Using Vertical GaN Fin-JFETs

2023 · Andrew Edwards, Vianey Padilla, et al. · IEEE International Symposium on Power Semiconductor Devices and ICs/Proceedings of the International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices and ICs · 1

A Vertical GaN-Based Neutral-Pointless Three-Level Inverter for High-Performance Automotive Traction Applications

2026 · USDOE Office of Energy Efficiency and Renewable Energy (EERE), Ali Halawa, et al. · OSTI OAI (U.S. Department of Energy Office of Scientific and Technical Information)

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World’s First Vertical GaN based High Power (200 kW) Multi-level Traction Electric Drive Design

2026 · USDOE Office of Energy Efficiency and Renewable Energy (EERE), Khorshed Alam, et al. · OSTI OAI (U.S. Department of Energy Office of Scientific and Technical Information)

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Works count: 21

Citation count: 635

H-index: 13

I10-index: 15