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Kiryong Kim

ORCID: 0000-0002-2256-3782
Observed ORCID: 0000-0002-2256-3782
OpenAlex ID: A5066554241
0.293-mm2 Fast Transient Response Hysteretic Quasi- $V^{2}$ DC–DC Converter With Area-Efficient Time-Domain-Based Controller in 0.35- $\mu$ m CMOS
2018 · Dong-Hoon Jung, Kiryong Kim, et al. · IEEE Journal of Solid-State Circuits · 34
An Energy-Efficient Design of TSV I/O for HBM With a Data Rate up to 10 Gb/s
2023 · Ji-Young Kim, Taeryeong Kim, et al. · IEEE Journal of Solid-State Circuits · 23
SRAM Write- and Performance-Assist Cells for Reducing Interconnect Resistance Effects Increased With Technology Scaling
2022 · Keonhee Cho, Heekyung Choi, et al. · IEEE Journal of Solid-State Circuits · 21
Full-Swing Local Bitline SRAM Architecture Based on the 22-nm FinFET Technology for Low-Voltage Operation
2015 · Kyoman Kang, Hanwool Jeong, et al. · IEEE Transactions on Very Large Scale Integration (VLSI) Systems · 21
Area- and Energy-Efficient STDP Learning Algorithm for Spiking Neural Network SoC
2020 · Giseok Kim, Kiryong Kim, et al. · IEEE Access · 16
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An Offset-Canceled Sense Amplifier for DRAMs With Hidden Offset-Cancellation Time and Boosted Internal-Voltage-Difference
2023 · In-Jun Jung, Tae-Hyun Kim, et al. · IEEE Transactions on Circuits & Systems II Express Briefs · 15
SRAM Write Assist Circuit Using Cell Supply Voltage Self-Collapse With Bitline Charge Sharing for Near-Threshold Operation
2021 · Keonhee Cho, Juhyun Park, et al. · IEEE Transactions on Circuits & Systems II Express Briefs · 15
A 6.9-μm2 3.26-ns 31.25-fj Robust Level Shifter With Wide Voltage and Frequency Ranges
2020 · Kiryong Kim, Ji Young Kim, et al. · IEEE Transactions on Circuits & Systems II Express Briefs · 15
A 5 Gb/s Time-Interleaved Voltage-Mode Duobinary Encoding Scheme for 3-D-Stacked IC
2022 · Ji-Young Kim, Jongsoo Lee, et al. · IEEE Journal of Solid-State Circuits · 12
Thermal and solar energy harvesting boost converter with time-multiplexing MPPT algorithm
2016 · Dong-Hoon Jung, Kiryong Kim, et al. · IEICE Electronics Express · 12
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Transient Cell Supply Voltage Collapse Write Assist Using Charge Redistribution
2016 · Kiryong Kim, Hanwool Jeong, et al. · IEEE Transactions on Circuits & Systems II Express Briefs · 11
A 0.166 pJ/b/pF, 3.5–5 Gb/s TSV I/O Interface With V OH Drift Control
2020 · Ji-Young Kim, Jongsoo Lee, et al. · IEEE Transactions on Circuits & Systems II Express Briefs · 7
A 14-nm Low Voltage SRAM with Charge-Recycling and Charge Self-Saving Techniques for Low-Power Applications
2022 · Keonhee Cho, Giseok Kim, et al. · IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits) · 4
Bitline Charge Sharing Suppressed Bitline and Cell Supply Collapse Assists for Energy-Efficient 6T SRAM
2021 · Kiryong Kim, Tae Woo Oh, et al. · IEEE Access · 4
Triplet-based Spike Timing Dependent Plasticity Circuit Design for three-terminal Spintronic Synapse
2018 · Beomsang Yoo, Kiryong Kim, et al. · IEEE International Conference on Electronics, Circuits and Systems (ICECS) · 4
A Low Power TSV I/O with Data Rate up to 10 Gb/s for Next Generation HBM
2022 · Ji-Young Kim, Taeryeong Kim, et al. · IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits) · 2
SRAM Write- and Performance-Assist Cells for Reducing Interconnect Resistance Effects Increased with Technology Scaling
2021 · Keonhee Cho, Heekyung Choi, et al. · Symposium on VLSI Circuits · 2
Analyzing and Designing a Current Controller for Circulating Current Reduction in Parallel Three-Phase Voltage-Source Inverters
2018 · Kiryong Kim, Dongsul Shin, et al. · Journal of Power Electronics · 2
DC-DC Boost Converter using Offset-Controlled Zero Current Sensor for Low Loss Thermoelectric Energy Harvesting Circuit
2016 · Sunghwan Joo, Kiryong Kim, et al. · Journal of IKEEE
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Works count: 19
Citation count: 220
H-index: 11
I10-index: 11
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