Author

Paul J. van der Wel

Observed names: P J van der Wel, P. J. Van Der Wel, P. J. van der Wel, P. van der Wel, P.J. Van der Wel, P.J. van der Wel

Observed institutions: NXP (Netherlands), Radboud University Nijmegen, University of Bristol, Institute of High Pressure Physics, Philips (Netherlands), NXP (Germany), Imperial College London, AkzoNobel (Netherlands)

OpenAlex ID: A5067019143

Subband dependent mobilities and carrier saturation mechanisms in thin Si doping layers in GaAs in the high density limit

1991 · E Skuras, R Kumar, et al. · Semiconductor Science and Technology · 85

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Carrier-concentation-dependent electron–LO-phonon coupling observed in GaAs-(Ga,Al)As heterojunctions by resonant-polaron cyclotron resonance

1988 · C. J. G. M. Langerak, J. Singleton, et al. · Physical review. B, Condensed matter · 69

Operating limits for RF power amplifiers at high junction temperatures

2004 · Z. Radivojevic, K. Andersson, et al. · Microelectronics Reliability · 37

De Haas-van Alphen effect in the superconducting state

1995 · R. Corcoran, N. Harrison, et al. · Physica B Condensed Matter · 35

Reliability and degradation mechanism of AlGaN/GaN HEMTs for next generation mobile communication systems

2009 · M. Dammann, W. Pletschen, et al. · Microelectronics Reliability · 33

Thermal behavior of BAW filters at high RF power levels

2009 · O. Wunnicke, P.J. van der Wel, et al. · IEEE Transactions on Ultrasonics Ferroelectrics and Frequency Control · 30

Reliability status of GaN transistors and MMICs in Europe

2010 · M. Dammann, M. Casar, et al. · IEEE International Reliability Physics Symposium proceedings · 22

Quantum oscillations near Bc2 in the organic superconductor κ-(BEDT-TTF)2Cu(NCS)2

1994 · P.J. van der Wel, J. Caulfield, et al. · Physica C Superconductivity · 21

High-spatial-resolution photoluminescence studies on misfit dislocations in lattice-mismatched III-V heterostructures

1992 · P J van der Wel, J te Nijenhuis, et al. · Semiconductor Science and Technology · 21

Investigation of Leakage Current of AlGaN/GaN HEMTs Under Pinch-Off Condition by Electroluminescence Microscopy

2010 · Martina Baeumler, Frank Gütle, et al. · Journal of Electronic Materials · 20

Misfit dislocation formation in lattice-mismatched III - V heterostructures grown by metal - organic vapour phase epitaxy

1996 · J te Nijenhuis, P J van der Wel, et al. · Journal of Physics D Applied Physics · 18

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High spatial resolution photoluminescence studies of dislocations in Si-doped, liquid-encapsulated Czochralski GaAs

1990 · E. P. Visser, P. J. van der Wel, et al. · Journal of Applied Physics · 17

Degradation of 0.25 μm GaN HEMTs under high temperature stress test

2015 · M. Dammann, M. Baeumler, et al. · Microelectronics Reliability · 15

Spatially resolved study of dislocations in Si-doped LEC GaAs by DSL, PL and EBIC

1992 · J L Weyher, P J van der Wel, et al. · Semiconductor Science and Technology · 14

De Haas-van Alphen oscillations near Bc2 in the organic superconductor κ-(ET)2Cu(NCS)2

1995 · P.J. van der Wel, J. Caulfield, et al. · Synthetic Metals · 13

Critical layer thickness of MOVPE-grown GaAs on InxGa1−xAs

1991 · J. te Nijenhuis, P.J. van der Wel, et al. · Journal of Crystal Growth · 12

Reliability and electric properties for PECVD a-SiN/sub x/:H films with an optical band-gap ranging from 2.5 to 5.38 eV

2003 · M.H.W.M. van Delden, P.J. van der Wel · IEEE International Reliability Physics Symposium proceedings · 11

The effect of DX centres on mobility in heavily doped n-GaAs calculated by Monte Carlo simulations

1993 · P J van der Wel, M J Anders, et al. · Semiconductor Science and Technology · 11

Complementary DSL, EBIC and PL study of grown-in defects in Si-doped GaAs crystals grown under Ga- and As-rich conditions by LEC method

1990 · J.L. Weyher, C. Frigeri, et al. · Journal of Crystal Growth · 11

Electromigration behavior in aluminum wires for power base-station applications

2017 · Paul J. van der Wel, Rik Otte, et al. · IEEE International Reliability Physics Symposium proceedings · 7

Hermeticity testing of capacitive RF MEMS switches

2008 · P.J. van der Wel, J. Stulemeijer, et al. · IEEE International Reliability Physics Symposium proceedings · 7

Reliability Assessment of Extrinsic Defects in Sinx Metal-Insulator-Metal Capacitors

2006 · P.J. van der Wel, J.R. de Beer, et al. · Reliability of Compound Semiconductors Workshop (ROCS) · 7

Unusual Behaviour of the DX-Centre in GaAs:Ge

1993 · P. Wisniewski, P. van der Wel, et al. · Japanese Journal of Applied Physics · 7

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Elimination of DX centerlike behavior of donors in heavily doped GaAs

1991 · T. Suski, P. Wisniewski, et al. · Journal of Applied Physics · 7

Moisture absorption and desorption in wafer level chip scale packages

2015 · K. Rongen, A. Mavinkurve, et al. · Microelectronics Reliability · 6

Works count: 45

Citation count: 576

H-index: 14

I10-index: 19