Author

Arefin Ahamed Shuvo

Institution: Khulna University of Engineering and Technology

Observed institution: Khulna University of Engineering and Technology

ORCID: 0009-0000-2856-2310

Observed ORCID: 0009-0000-2856-2310

OpenAlex ID: A5067556403

Finite Element Modeling of MXene/PVDF-Based High-Performance Triboelectric Nanogenerators for Self-Powered Wearable Electronics

2024 · Arefin Ahamed Shuvo, Ashraful Ghani Bhuiyan, et al. · ACS Applied Electronic Materials · 14

Ultrawide-bandgap AlGaN-based HEMTs for high-power switching

2020 · Arefin Ahamed Shuvo, Md. Rafiqul Islam, et al. · Journal of Computational Electronics · 7

Electrical Characteristics of Dual Gate AlGaN/GaN High-Electron Mobility Transistors

2021 · Sagor Hazra, Arefin Ahamed Shuvo, et al. · International Conference on Electrical Information and Communication Technology (EICT) · 3

Effects of Structural Variation for Improved Performance of a Vertical AlGaN/GaN Superjunction HEMT

2021 · Shahriar Sheikh, Arefin Ahamed Shuvo, et al. · International Conference on Electrical Engineering and Information Communication Technology · 3

Impact of EV charging scheduling and demand side management on overall load profile: An Australian case study

2026 · Anis Ahmed, Arefin Ahamed Shuvo, et al. · Electric Power Systems Research · 2

Study on E-Mode AlGaN/GaN High-Electron Mobility Transistor with Composite P-GaN Cap and Recessed Gate Structure

2024 · Abdullah Al Fahad, Priyotous Banik Tirtha, et al. · IEEE International Conference on Power, Electrical, Electronics and Industrial Applications (PEEIACON) · 1

Demonstration of Strong Electrostatic Control in N-Polar E-Mode GaN MISHEMTs

2026 · Md. Muntasir Rahman Abir, Arefin Ahamed Shuvo, et al. · IEEE International Conference on Quantum Photonics, Artificial Intelligence & Networking (QPAIN)

Influence of p-GaN Cap Layer Engineering and Thermal Effects on the Electrical Performance of AlGaN/GaN HEMTs

2026 · Hrithik Mohanto Himel, Md. Rafiqul Islam, et al. · IEEE International Conference on Quantum Photonics, Artificial Intelligence & Networking (QPAIN)

Performance Trade-Offs in HEMTs Due to Differences in Gate Length and Gate-to-Drain Spacing

2026 · Hrithik Mohanto Himel, Md. Rafiqul Islam, et al. · IEEE International Conference on Quantum Photonics, Artificial Intelligence & Networking (QPAIN)

Analysis of p-GaN-Gate HEMTs: Impact of Gate Length and Gate-to-Drain Spacing on Device Performance and Characteristics

2026 · Hrithik Mohanto Himel, Md. Rafiqul Islam, et al. · International Conference on Electrical, Computer & Telecommunication Engineering (ICECTE)

Effect of Fin-width on the DC Performance of AlGaN/GaN Fin-HEMTs

2023 · Priyotous Banik Tirtha, Md. Mutassim Fuad, et al. · International Conference on Electrical Information and Communication Technology (EICT)

Works count: 11

Citation count: 30

H-index: 3

I10-index: 1