Get started
Author

Ramkumar Natarajan

Observed name: N. Ramkumar
Institution: SR University
ORCID: 0000-0001-7812-0879
Observed ORCID: 0000-0001-7812-0879
OpenAlex ID: A5067572808
Highly scaled graded channel GaN HEMT with peak drain current of 2.48 A/mm
2021 · K. Husna Hamza, D. Nirmal, et al. · AEU - International Journal of Electronics and Communications · 36
Enhanced drain current and cut off frequency in AlGaN/GaN HEMT with BGaN back barrier
2022 · K. Husna Hamza, D. Nirmal, et al. · Materials Science and Engineering B · 25
UWBG AlN/β-Ga2O3 HEMT on Silicon Carbide Substrate for Low Loss Portable Power Converters and RF Applications
2022 · S. Baskaran, M. Shunmugathammal, et al. · Silicon · 23
Influence of High-k Passivation Layer on Gate Field Plate AlGaN/GaN/AlGaN Double Heterojunction HEMT
2022 · Ramkumar Natarajan, Eswaran Parthasarathy, et al. · Silicon · 23
Influence of AlN passivation on thermal performance of AlGaN/GaN high-electron mobility transistors on sapphire substrate: A simulation study
2021 · P. Murugapandiyan, D. Nirmal, et al. · Materials Science and Engineering B · 23
Investigation of different buffer layer impact on AlN/GaN/AlGaN HEMT using silicon carbide substrate for high-speed RF applications
2024 · Ramkumar Natarajan, P. Murugapandiyan, et al. · Micro and Nanostructures · 22
Investigation of Influence of SiN and SiO2 Passivation in Gate Field Plate Double Heterojunction Al0.3Ga0.7N/GaN/Al0.04Ga0.96N High Electron Mobility Transistors
2021 · P. Murugapandiyan, D. Nirmal, et al. · Silicon · 21
Design and analysis of normally-off GaN-HEMT using β-Ga2O3 buffer for low-loss power converter applications
2023 · A. Revathy, J. Vijaya Kumar, et al. · Micro and Nanostructures · 19
Comparative Study of AlGaN/InGaN/β-Ga2O3 and InAlN/InGaN/β-Ga2O3 HEMTs for Enhanced RF Linearity
2024 · P. Murugapandiyan, A. Revathy, et al. · Journal of Electronic Materials · 14
Ultra‐wide bandgap Al 0. 1 Ga 0 . 9 N double channel HEMT for RF applications
2022 · Ramkumar Natarajan, Eswaran Parthasarathy, et al. · International Journal of RF and Microwave Computer-Aided Engineering · 12
Breakdown Voltage Enhancement of Al0.1Ga0.9 N Channel HEMT with Recessed Floating Field Plate
2021 · Ramkumar Natarajan, Eswaran Parthasarathy · Silicon · 12
PDF
Recent advancement in β-Ga2O3 MOSFETs: From material growth to device architectures for high-power electronics
2025 · P. Murugapandiyan, A.S. Augustine Fletcher, et al. · Microelectronic Engineering · 11
Enhancement of Blocking Voltage in GaN HEMT Using Stacked Passivation Layer
2022 · Ramkumar Natarajan · Silicon · 11
A 28-GHz Low-Loss AlGaN/GaN HEMT for TX/RX Switches in 5G Base Stations
2022 · A. S. Augustine Fletcher, D. Nirmal, et al. · Journal of Electronic Materials · 10
GaN-Based High-Electron Mobility Transistors for High-Power and High-Frequency Application: A Review
2020 · P. Murugapandiyan, V. Rajya Lakshmi, et al. · Lecture notes in networks and systems · 9
Investigating the Impact of Fe-Doped GaN and β-Ga2O3 Buffer Layers on a Laterally Scaled AlN/GaN HEMT Using Silicon Carbide Substrate for Next-Generation RF Electronics
2024 · K. Nirmala Devi, S. Hariprasad, et al. · Journal of Electronic Materials · 7
Structural and electronic properties of Ge-Te clusters
2003 · Ramkumar Natarajan, Serdar Öğüt · Physical review. B, Condensed matter · 7
Impact of high-k dielectrics on enhancement-mode AlGaN/GaN MISHEMTs: performance comparison with various buffer layers for RF power electronics
2025 · R. S. Venkatesan, M. Maria Dominic Savio, et al. · Journal of the Korean Physical Society · 6
Comparative Analysis of In0.15Ga0.85N and β-Ga2O3 Back Barriers in β-Ga2O3-Buffered AlGaN/GaN HEMT Structures for High-Speed RF Electronics
2026 · K. Ferents Koni Jiavana, J. K. Kasthuri Bha, et al. · Physics of the Solid State · 5
Ultrawide Bandgap AlGaN-Channel-Based HEMTs for Next-Generation Electronics
2022 · P. Murugapandiyan, N. Ramkumar, et al. · Springer tracts in electrical and electronics engineering · 5
Performance Investigation of an L-Shaped Tunneling Gate TFET Photodetector for Near-Infrared Detection
2026 · Gali Madhavi, Chakradhar Adupa, et al. · Physics of the Solid State · 4
Optimized DC and RF Characteristics of ScAlN/InGaN/GaN HEMTs on Silicon Carbide using Step-graded AlGaN Buffer Layers
2026 · S. Saju, K. Swaminathan, et al. · Semiconductors · 4
Investigate AlN/GaN HEMT performance for future RF and high voltage switching applications
2024 · Ramkumar Natarajan, P. Murugapandiyan, et al. · International Conference on Advances in Modern Age Technologies for Health and Engineering Science (AMATHE) · 4
A High-Sensitivity Near-Infrared Photodetector Based on Optically Modulated Vertical Silicon TFET (OMVS-TFET) Using TCAD Simulation
2025 · Gali Madhavi, Chakradhar Adupa, et al. · International Conference on Electrical, Electronics, Communication and Computers (ELEXCOM) · 3
Design and Implementation of AHB Protocol-based 16/32 Bit Random Access Memory
2024 · M. Saravanan, TS. Badrii, et al. · International Conference on IoT Based Control Networks and Intelligent Systems (ICICNIS) · 3
Works count: 47
Citation count: 331
H-index: 11
I10-index: 14
Year
Topic
Type