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Shingo Genchi

Broad range thickness identification of hexagonal boron nitride by colors
2019 · Yuto Anzai, Mahito Yamamoto, et al. · Applied Physics Express · 36
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Growth of vanadium dioxide thin films on hexagonal boron nitride flakes as transferrable substrates
2019 · Shingo Genchi, Mahito Yamamoto, et al. · Scientific Reports · 20
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Noncontact evaluation of the interface potential in VO2/Si heterojunctions across metal–insulator phase transition
2023 · Dongxun Yang, Fumikazu Murakami, et al. · Applied Physics Letters · 11
Crystal orientation dependence of metal–insulator transition for VO2 microwires fabricated on TiO2(110) substrates with step and terrace structures
2022 · Kyungmin Kim, Shingo Genchi, et al. · Applied Physics Express · 4
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Step-like resistance changes in VO2 thin films grown on hexagonal boron nitride with in situ optically observable metallic domains
2022 · Shingo Genchi, Mahito Yamamoto, et al. · Applied Physics Letters · 4
Strain-free thin film growth of vanadium dioxide deposited on 2D atomic layered material of hexagonal boron nitride investigated by their thickness dependence of insulator–metal transition behavior
2025 · Boyuan Yu, Shingo Genchi, et al. · Applied Physics Express · 2
Step electrical switching in VO2 on hexagonal boron nitride using confined individual metallic domains
2023 · Shingo Genchi, Shu Nakaharai, et al. · Japanese Journal of Applied Physics · 2
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Prominent Verway Transition of Fe3O4 Thin Films Grown on Transferable Hexagonal Boron Nitride
2021 · Shingo Genchi, Ai I. Osaka, et al. · ACS Applied Electronic Materials · 2
Si–VO2 Hybrid Materials with Tunable Networks of Submicrometer Metallic VO2 Domains Provide Enhanced Diode Functionality
2025 · Ai I. Osaka, Masaya Nagai, et al. · ACS Applied Electronic Materials · 1
Nonlinear Electric Field Enhancement in the THz Range by Self-organized Metal Networks through Phase Transition of the VO2
2024 · Ai Isohashi Osaka, Masaya Nagai, et al. · International Conference on Solid State Devices and Materials (SSDM)
Interface Potential Estimation on VO2/Si Heterojunction by Terahertz Emission Spectroscopy with Temperature Variation
2023 · Dongxun Yang, Fumikazu Murakami, et al. · International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz)
Novel Method of Controlling the Metal–insulator Transition Anisotropy of VO2 Thin Films by Using Step and Terrace Structures
2023 · Kyungmin KIM, Shingo GENCHI, et al. · Vacuum and Surface Science
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Preparation of VO 2 ultra-thin films on the hexagonal Boron Nitride and their thicknesses dependence of electrical properties
2021 · Boyuan Yu, Shingo Genchi, et al. · The Japan Society of Applied Physics
Dependence of resistance jumps on the electrode gap distance in VO 2 grown on hexagonal boron nitride
2019 · Shingo Genchi, Mahito Yamamoto, et al. · The Japan Society of Applied Physics
Device size dependence on the metal-insulator transition-mediated resistivity change in VO 2 grown on hexagonal boron nitride
2019 · Shingo Genchi, Mahito Yamamoto, et al. · The Japan Society of Applied Physics
Growth and characterization of Fe 3 O 4 thin films on hexagonal boron nitride
2018 · Shingo Genchi, Mahito Yamamoto, et al. · The Japan Society of Applied Physics
Works count: 16
Citation count: 82
H-index: 4
I10-index: 3
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