Get started
Author

Basanta Roul

Observed names: B Roul, B. Roul, Basanta Kumar Roul
ORCID: 0000-0001-8953-0099
Observed ORCIDs: 0000-0001-8953-0099, 0000-0001-7749-6698
OpenAlex ID: A5068091756
Self-Powered, Broad Band, and Ultrafast InGaN-Based Photodetector
2019 · Arun Malla Chowdhury, Greeshma Chandan, et al. · ACS Applied Materials & Interfaces · 86
Binary group III-nitride based heterostructures: band offsets and transport properties
2015 · Basanta Roul, Mahesh Kumar, et al. · Journal of Physics D Applied Physics · 81
PDF
Defect-Mediated Transport in Self-Powered, Broadband, and Ultrafast Photoresponse of a MoS2/AlN/Si-Based Photodetector
2020 · Deependra Kumar Singh, Rohit Pant, et al. · ACS Applied Electronic Materials · 71
Wafer-scale synthesis of a uniform film of few-layer MoS 2 on GaN for 2D heterojunction ultraviolet photodetector
2018 · Neeraj Goel, Rahul Kumar, et al. · Journal of Physics D Applied Physics · 66
Temperature dependent electrical characterisation of Pt/HfO2/n-GaN metal-insulator-semiconductor (MIS) Schottky diodes
2015 · Arjun Shetty, Basanta Roul, et al. · AIP Advances · 66
A high-performance hydrogen sensor based on a reverse-biased MoS 2 /GaN heterojunction
2019 · Neeraj Goel, Rahul Kumar, et al. · Nanotechnology · 58
PDF
Toward a Fast and Highly Responsive SnSe 2 -Based Photodiode by Exploiting the Mobility of the Counter Semiconductor
2019 · Emma P. Mukhokosi, Basanta Roul, et al. · ACS Applied Materials & Interfaces · 55
Next-generation self-powered and ultrafast photodetectors based on III-nitride hybrid structures
2020 · Rohit Pant, Deependra Kumar Singh, et al. · APL Materials · 51
PDF
Highly Responsive, Self-Powered a -GaN Based UV-A Photodetectors Driven by Unintentional Asymmetrical Electrodes
2020 · Rohit Pant, Deependra Kumar Singh, et al. · ACS Applied Electronic Materials · 50
PDF
Experimental evidence of Ga-vacancy induced room temperature ferromagnetic behavior in GaN films
2011 · Basanta Roul, Mohana K. Rajpalke, et al. · Applied Physics Letters · 50
Semipolar and nonpolar GaN epi-films grown on m-sapphire by plasma assisted molecular beam epitaxy
2014 · Shruti Mukundan, Lokesh Mohan, et al. · Journal of Applied Physics · 43
Enhanced UV detection by non-polar epitaxial GaN films
2015 · Shruti Mukundan, Basanta Roul, et al. · AIP Advances · 42
PDF
Temperature-Dependent Electrical Transport and Optoelectronic Properties of SnS2/p-Si Heterojunction
2020 · Deependra Kumar Singh, Rohit Pant, et al. · ACS Applied Electronic Materials · 40
NO 2 gas sensing performance enhancement based on reduced graphene oxide decorated V 2 O 5 thin films
2019 · Vijendra Singh Bhati, D Sheela, et al. · Nanotechnology · 39
PDF
Theoretical Understanding of Polar Topological Phase Transitions in Functional Oxide Heterostructures: A Review
2022 · Xiangwei Guo, Linming Zhou, et al. · Small Methods · 38
In-Plane Anisotropic Photoconduction in Nonpolar Epitaxial a-Plane GaN
2018 · Rohit Pant, Arjun Shetty, et al. · ACS Applied Materials & Interfaces · 38
Different types of band alignment at MoS2/(Al, Ga, In)N heterointerfaces
2020 · Deependra Kumar Singh, Basanta Roul, et al. · Applied Physics Letters · 30
Enhanced UV Photodetector Response of ZnO/Si With AlN Buffer Layer
2017 · Basanta Roul, Rohit Pant, et al. · IEEE Transactions on Electron Devices · 28
Double Gaussian distribution of barrier heights and self-powered infrared photoresponse of InN/AlN/Si (111) heterostructure
2019 · Arun Malla Chowdhury, Rohit Pant, et al. · Journal of Applied Physics · 27
Temperature dependent electrical transport behavior of InN/GaN heterostructure based Schottky diodes
2011 · Basanta Roul, Mohana K. Rajpalke, et al. · Journal of Applied Physics · 27
Improved growth of GaN layers on ultra thin silicon nitride/Si (111) by RF-MBE
2010 · Mahesh Kumar, Basanta Roul, et al. · Materials Research Bulletin · 27
Transport and infrared photoresponse properties of InN nanorods/Si heterojunction
2011 · Mahesh Kumar, Thirumaleshwara N Bhat, et al. · Nanoscale Research Letters · 26
PDF
Substrate nitridation induced modulations in transport properties of wurtzite GaN/p-Si (100) heterojunctions grown by molecular beam epitaxy
2011 · Thirumaleshwara N. Bhat, Mohana K. Rajpalke, et al. · Journal of Applied Physics · 25
Barrier height inhomogeneity in electrical transport characteristics of InGaN/GaN heterostructure interfaces
2015 · Basanta Roul, Shruti Mukundan, et al. · AIP Advances · 23
Photodetection Properties of Nonpolar a‐Plane GaN Grown by Three Approaches Using Plasma‐Assisted Molecular Beam Epitaxy
2019 · Rohit Kumar Pant, Deependra Kumar Singh, et al. · physica status solidi (a) · 22
Works count: 110
Citation count: 1,818
H-index: 23
I10-index: 62
Year
Topic
Type