Get started
Author

Hamilton Carrillo-Nuñez

Observed names: Carrillo Nunez, Hamilton, Carrillo Núñez, Hamilton, Carrillo-Nuñez, Hamilton, H. Carrillo-Nunez, H. Carrillo-Nuñez, Hamilton Carrillo Nunez, Hamilton Carrillo-Nunez, Hamilton Carrillo‐Nuñez
Observed institutions: Centre National de la Recherche Scientifique, University of Antwerp, Universidad de Granada, Universidade Estadual de Campinas (UNICAMP), ETH Zurich, Fluxim (Switzerland), Institut des Matériaux, de Microélectronique et des Nanosciences de Provence, Château Gombert, Institut de Recherche sur les Phénomènes Hors Équilibre, Integrated Systems Laboratory, University of Glasgow
ORCID: 0000-0002-5042-3664
Observed ORCID: 0000-0002-5042-3664
OpenAlex ID: A5068107036
Machine Learning Approach for Predicting the Effect of Statistical Variability in Si Junctionless Nanowire Transistors
2019 · Hamilton Carrillo-Nunez, Nadezhda Dimitrova, et al. · IEEE Electron Device Letters · 128
PDF
Nano-electronic Simulation Software (NESS): a flexible nano-device simulation platform
2020 · Salim Berrada, Hamilton Carrillo-Nunez, et al. · Journal of Computational Electronics · 40
PDF
Modeling direct band-to-band tunneling: From bulk to quantum-confined semiconductor devices
2015 · H. Carrillo-Nuñez, A. Ziegler, et al. · Journal of Applied Physics · 33
Phonon-limited performance of single-layer, single-gate black phosphorus n- and p-type field-effect transistors
2015 · Aron Szabo, Reto Rhyner, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 32
Simulation of the Impact of Ionized Impurity Scattering on the Total Mobility in Si Nanowire Transistors
2019 · Toufik Sadi, Cristina Medina-Bailon, et al. · Materials · 29
PDF
Understanding Electromigration in Cu-CNT Composite Interconnects: A Multiscale Electrothermal Simulation Study
2018 · Jaehyun Lee, Salim Berrada, et al. · IEEE Transactions on Electron Devices · 22
NESS: new flexible Nano-Electronic Simulation Software
2018 · Salim Berrada, Tapas Dutta, et al. · International Conference on Simulation of Semiconductor Processes and Devices · 21
Analysis of InAs-Si heterojunction nanowire tunnel FETs: Extreme confinement vs. bulk
2015 · Hamilton Carrillo-Nuñez, Mathieu Luisier, et al. · Solid-State Electronics · 21
Comprehensive Study of Cross-Section Dependent Effective Masses for Silicon Based Gate-All-Around Transistors
2019 · Oves Badami, Cristina Medina-Bailon, et al. · Applied Sciences · 20
PDF
Mobility of Circular and Elliptical Si Nanowire Transistors Using a Multi-Subband 1D Formalism
2019 · Cristina Medina-Bailon, Toufik Sadi, et al. · IEEE Electron Device Letters · 19
PDF
Influence of electron–phonon interactions in single dopant nanowire transistors
2014 · H. Carrillo-Nuñez, M. Bescond, et al. · Journal of Applied Physics · 16
Random Dopant-Induced Variability in Si-InAs Nanowire Tunnel FETs: A Quantum Transport Simulation Study
2018 · Hamilton Carrillo-Nunez, Jaehyun Lee, et al. · IEEE Electron Device Letters · 14
Multi‐Scale Simulation of Reverse‐Bias Breakdown in All‐Perovskite Tandem Photovoltaic Modules under Partial Shading Conditions
2024 · Urs Aeberhard, Nelly Natsch, et al. · Solar RRL · 13
PDF
Localization of electronic states in finite ladder models: Participation ratio and localization length as measures of the wave-function extension
2008 · H. Carrillo-Nuñez, Peter A. Schulz · Physical Review B · 13
Quantum Enhancement of a S/D Tunneling Model in a 2D MS-EMC Nanodevice Simulator: NEGF Comparison and Impact of Effective Mass Variation
2020 · Cristina Medina-Bailon, Hamilton Carrillo-Nunez, et al. · Micromachines · 10
PDF
Surface Roughness Scattering in NEGF using self-energy formulation
2019 · Oves Badami, Salim Berrada, et al. · International Conference on Simulation of Semiconductor Processes and Devices · 10
An Accurate Analytical Model for Tunnel FET Output Characteristics
2019 · Yunhe Guan, Zunchao Li, et al. · IEEE Electron Device Letters · 10
Schrödinger Equation Based Quantum Corrections in Drift-Diffusion: A Multiscale Approach
2019 · Tapas Dutta, Cristina Medina-Bailon, et al. · IEEE Nanotechnology Materials and Devices Conference (NMDC) · 9
PDF
Variability Predictions for the Next Technology Generations of n-type SixGe1−x Nanowire MOSFETs
2018 · Jaehyun Lee, Oves Badami, et al. · Micromachines · 9
PDF
The Impact of Dopant Diffusion on Random Dopant Fluctuation in Si Nanowire FETs: A Quantum Transport Study
2018 · Jaehyun Lee, Salim Berrada, et al. · International Conference on Simulation of Semiconductor Processes and Devices · 9
Impact of Randomly Distributed Dopants on $\Omega$ -Gate Junctionless Silicon Nanowire Transistors
2018 · Hamilton Carrillo-Nunez, Muhamad M. Mirza, et al. · IEEE Transactions on Electron Devices · 9
Design of High-Performance InAs–Si Heterojunction 2D–2D Tunnel FETs With Lateral and Vertical Tunneling Paths
2016 · Hamilton Carrillo-Nunez, Mathieu Luisier, et al. · IEEE Transactions on Electron Devices · 9
Effect of surface roughness and phonon scattering on extremely narrow InAs-Si Nanowire TFETs
2016 · Hamilton Carrillo-Nunez, Reto Rhyner, et al. · European Solid-State Device Research Conference · 8
Size and temperature dependence of the electron–phonon scattering by donors in nanowire transistors
2016 · M. Bescond, H. Carrillo-Nuñez, et al. · Solid-State Electronics · 8
Phonon-assisted Zener tunneling in a cylindrical nanowire transistor
2013 · H. Carrillo-Nuñez, Wim Magnus, et al. · Journal of Applied Physics · 8
Works count: 58
Citation count: 580
H-index: 13
I10-index: 17
Year
Topic
Type