Author

Jeff J. Ye

Observed institution: Micron (United States)

ORCID: 0009-0000-1700-003X

Observed ORCID: 0009-0000-1700-003X

OpenAlex ID: A5068210723

Continuous plasma etch process with waferless chamber clean optimization for defect reduction by eliminating center injector shading

2022 · Jeff J. Ye, John Lee, et al. · ASMC proceedings · 6

In situ plasma pin-up clean process for backside bevel polymer removal, defect reduction, and queue time relaxation

2024 · Benjamin B. Ye, Ganquan Song, et al. · Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena · 4

Defect Reduction and Line Width Roughness Improvement by Using a Post Precoat Treatment in Waferless Chamber Conditioning

2025 · Jeff J. Ye, Raviteja Pagadala, et al. · IEEE Transactions on Semiconductor Manufacturing · 3

High aspect ratio etch yield improvement by a novel polymer dump thickness metrology

2015 · Jeff J. Ye, Ganga R. Ega, et al. · ASMC proceedings · 3

High aspect ratio container edge profile tilting solution on advanced DRAM technology

2025 · Wisely Huang, Jeff J. Ye, et al. · ASMC proceedings · 2

Defect Reduction And Line Width Roughness (LWR) improvement By Using A Post Precoat Treatment (PPT) In Waferless Chamber Conditioning (WCC)

2024 · Jeff J. Ye, Raviteja Pagadala, et al. · ASMC proceedings · 2

A Novel Continuous Plasma Etch with Optimized Algorithms for Yield Improvement and High Production Throughput in NOR Memory

2023 · Jeff J. Ye, Fei Lu, et al. · ASMC proceedings · 2

Line width roughness (LWR) improvement and queue time elimination by a chlorine-based process in pitch doubling for improving throughput

2021 · Jeff J. Ye, Benjamin B. Ye, et al. · ASMC proceedings · 2

A New and Innovative In situ Plasma Etch Pin-up Clean for Defect Reduction and Process Simplification

2025 · Jeff J. Ye, Bill Crandley, et al. · ASMC proceedings · 1

Elimination of Pinhole Defects in Self-Aligned Double Patterning Process by using Bias Pulsed Plasma

2024 · Wan-Ping Lien, Jeff J. Ye, et al. · ASMC proceedings · 1

A Role of N2 and O2 Gasses in Post Etch Treatment (PET) for Removing Fluorocarbon Based By-Product Outgassing in DRAM Memory

2023 · Jeff J. Ye, Wan-Ping Lien, et al. · ASMC proceedings · 1

Reduction of Plasma Etch Induced Defects Using Variable Delay Time Buffer Station

2026 · Jeff J. Ye, Raviteja Pagadala, et al. · ASMC proceedings

Elimination of First Wafer Effect in Plasma Etch Processes

2026 · Jeff J. Ye, Raviteja Pagadala, et al. · ASMC proceedings

Intrinsic Reliability Enhancement and Elimination of Extrinsic Defects for Critical Memory Device Applications

2026 · Seiichi Takedai, Adityan Murthi, et al. · ASMC proceedings

Endpoint Strategy for Process Optimization and Yield Improvement in Advanced Memory Devices

2026 · Jeff J. Ye, Wan-Ping Lien, et al. · ASMC proceedings

Effect of plasma RF state 0 pulsing power on micro-loading and cross-wafer uniformity in high aspect ratio contact etch

2025 · Jeff J. Ye, Bill Crandley, et al. · ASMC proceedings

A New Continuous Plasma Process For Defect Reduction

2025 · Jeff J. Ye, Dami Egbeyemi, et al. · ASMC proceedings

Elimination of Bond Pad Etch Induced Wafer Arcing via Reducing ESC Chuck Surface Charges

2024 · Jeff J. Ye, Wan-Ping Lien, et al. · ASMC proceedings

In-Situ Post Etch Fluorocarbon Byproduct Removal for HDP Void Reduction

2024 · Prabhakar Bharatan, Jeff J. Ye, et al. · ASMC proceedings

Process Margin Improvement and Cost Saving from a New Plasma Oxide Etch Process with Endpoint Algorithm During Photolithography Positive- to Negative-Tone Develop Conversion

2024 · Jeff J. Ye, Todd Smith, et al. · ASMC proceedings

Control Gate Device Leakage Reduction by Improving Polysilicon Etch Uniformity and Active Area Recess

2023 · Jeff J. Ye, Meng-Yin Wu, et al. · ASMC proceedings

Works count: 21

Citation count: 27

H-index: 3

I10-index: