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Dongyean Oh
Observed names:
D.-Y. Oh,
Oh, Dongyean
Institutions:
SK Group (South Korea),
SK Hynix (South Korea)
Observed institutions:
SK Group (United States),
SK Group (South Korea),
Samsung (South Korea),
Samsung Electronics (South Korea),
SK Hynix (South Korea)
ORCID:
0000-0002-1262-1838
Observed ORCID:
0000-0002-1262-1838
OpenAlex ID:
A5068485787
TCAD Simulation of Data Retention Characteristics of Charge Trap Device for 3-D NAND Flash Memory
2015
·
Dongyean Oh
, Bonghoon Lee
, et al.
·
IEEE International Memory Workshop (IMW)
·
25
Atomistic Simulation of HF Etching Process of Amorphous Si 3 N 4 Using Machine Learning Potential
2024
·
Changho Hong
, Sangmin Oh
, et al.
·
ACS Applied Materials & Interfaces
·
24
Program Disturb Phenomenon by DIBL in MLC NAND Flash Device
2008
·
Dongyean Oh
, Seungchul Lee
, et al.
·
IEEE International Memory Workshop (IMW)
·
17
First Demonstration of Fully Integrated 16 nm Half-Pitch Selector Only Memory (SOM) for Emerging CXL Memory
2024
·
Myoungsub Kim
, Yooncheol Bae
, et al.
·
IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)
·
15
TCAD augmented generative adversarial network for hot-spot detection and mask-layout optimization in a large area HARC etching process
2022
·
Hyoungcheol Kwon
, Hyunsuk Huh
, et al.
·
Physics of Plasmas
·
13
A New Self-Boosting Phenomenon by Soure/Drain Depletion Cut-off in NAND Flash Memory
2007
·
Dongyean Oh
, Changsub Lee
, et al.
·
IEEE International Memory Workshop (IMW)
·
13
Effect of heavy inert ion strikes on cell density-dependent profile variation and distortion during the etching process for high-aspect ratio features
2022
·
Hyoungcheol Kwon
, Imhee Won
, et al.
·
Physics of Plasmas
·
6
3-dimensional analysis on the cell string current of NAND flash memory
2006
·
H.-S. Oh
, S.-C. Lee
, et al.
·
Non-Volatile Memory Technology Symposium
·
6
Etching-to-deposition transition in SiO2/Si 3 N 4 using CH x F y ion-based plasma etching: An atomistic study with neural network potentials
2025
·
Hyungmin An
, Sangmin Oh
, et al.
·
Applied Surface Science
·
4
PDF
Dielectric Confinement Impact on Electrical Performance of Highly Scaled Saddle-Fin Cell Transistor for High Density DRAM
2021
·
Dongyean Oh
, Seunghan Lee
, et al.
·
Technical digest - International Electron Devices Meeting/Technical digest
·
3
An abnormal floating gate interference and a low program performance in 2y nm NAND flash devices
2011
·
Eunmee Kwon
, Dongyean Oh
, et al.
·
International Conference on Simulation of Semiconductor Processes and Devices
·
3
Mass Producible Multi-Site NAND Flash for Fast, Reliable and Power-Efficient 5-Bits/Cell Operation
2025
·
Jung-Shik Jang
, In Su Park
, et al.
·
Technical digest - International Electron Devices Meeting/Technical digest
·
2
Industry's First Recessed Gate Transistor Technology for Sense Amplifer Circuit in DRAM: Phenomena of Randomly Threshold Voltage High Flying and Subthreshold Swing Degradation
2020
·
Dongyean Oh
, Heejung Yang
, et al.
·
Technical digest - International Electron Devices Meeting/Technical digest
·
2
New Cell Structure with Edge-thick Tunnel Oxide for Highly Reliable NAND Flash Memory Devices
2006
·
Tae-Kyung Kim
, Jaihyuk Song
, et al.
·
IEEE International Memory Workshop (IMW)
·
1
Asynchronous pulse-modulated plasma effect on the generation of abnormal high-energetic electrons for the suppression of charge-up induced tilting and cell density-dependent etching profile variation
2023
·
Hyoungcheol Kwon
, Felipe Iza
, et al.
·
Physics of Plasmas
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Works count:
17
Citation count:
134
H-index:
6
I10-index:
6
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