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Author

U. P. Asatova

Observed names: Asatova Umida Palvanovna, Umida Asatova, У Асатова, У.П. Асатова
ORCID: 0000-0002-5256-8760
Observed ORCID: 0000-0002-5256-8760
OpenAlex ID: A5068522229
Growth of (InSb)1 − x (Sn2) x films on GaAs substrates by liquid-phase epitaxy
2010 · A. S. Saidov, M. S. Saidov, et al. · Semiconductors · 9
Growth of Ge1 − x Sn x solid solution films and study of their structural properties and some of their photoelectric properties
2012 · A. S. Saidov, Sh. N. Usmonov, et al. · Semiconductors · 7
Peculiarities of the Current–Voltage Characteristic of n-GaP–p-(InSb)1 – x(Sn2)x Heterostructures
2020 · A. S. Saidov, A. Yu. Leiderman, et al. · Technical Physics Letters · 4
Active solar energy material science thermoelectric properties of nGe-p(InSb)1 − x (Sn2) x heterostructures
2010 · A. S. Saidov, Sh. N. Usmonov, et al. · Applied Solar Energy · 4
Investigation of the Spectral Photosensitivity of nGaAs-n+(GaAs)1-x-y(Ge2)x(ZnSe)y Heterostructure Obtained from Bi Solution-Melt
2024 · Ismailov Shavkat Kuzievich, Saidov Amin Safarbaevich, et al. · The Transactions of The Korean Institute of Electrical Engineers · 2
First-principles study of cooperative GaP incorporation and defect clustering in silicon
2026 · Shahzod Masharipov, Amin Saidov, et al. · Computational Condensed Matter · 1
Features of Liquid–Phase Epitaxy of (InSb)1–z(Sn2)z Solid Solutions of Molecular Substitution on GaAs and GaP Substrates
2022 · Shukrullo Usmonov, Umida Asatova, et al. · International Conference on Information Science and Communications Technologies (ICISCT) · 1
Regarding Spectrum Photosensitivity and Certain GaAs’s Structural Properties Heterostructures, Namely (GaAs)1-x-y(Ge2)x(ZnSe)y
2024 · Shavkat Ismailov, Dadajon Saparov, et al. · International Siberian workshops and tutorials on electron devices and materials
ОСОБЕННОСТИ ЭПИТАКСИИ СЛОЕВ ТВЕРДЫХ РАСТВОРОВ (InSb)1-х(Sn2)х НА GaAs ПОДЛОЖКАХ
2020 · А Саидов, Ш Усмонов, et al. · Современные тенденции развития физики полупроводников: достижения, проблемы и перспективы
FEATURES OF EPITAXY OF THE LAYERS OF SOLID SOLUTIONS (InSb)1-x(Sn2)x ON GaAs SUBSTRATES
2020 · А. С. Саидов, Sh. N. Usmonov, et al.
Особенности вольт-амперной характеристики гетероструктуры n-GaP--p-(InSb)-=SUB=-1-x-=/SUB=-(Sn-=SUB=-2-=/SUB=-)-=SUB=-x-=/SUB=-
2020 · А.С. Саидов, А.Ю. Лейдерман, et al. · Письма в журнал технической физики
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The influence of Co 60 quanta on current characteristics of rectifier columns on the base of silicon
1995 · G. Aripov, A. É. Atamuratov, et al.
Works count: 12
Citation count: 28
H-index: 4
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