Author

N. Novkovski

Observed names: N Novkovski, N. NOVKOVSKI, NENAD NOVKOVSKI, Nenad Novkovski, Novkovski, Nenad

Institutions: Macedonian Academy of Sciences and Arts, Ss. Cyril and Methodius University in Skopje

Observed institutions: Macedonian Academy of Sciences and Arts, University of Macedonia, École Polytechnique Fédérale de Lausanne, Ss. Cyril and Methodius University in Skopje

ORCID: 0000-0003-0084-7888

Observed ORCID: 0000-0003-0084-7888

OpenAlex ID: A5068566228

Oxygen annealing modification of conduction mechanism in thin rf sputtered Ta2O5 on Si

2002 · E Atanassova, N Novkovski, et al. · Solid-State Electronics · 64

Properties of SnO2:F films prepared on glass substrates by the spraying method

1984 · G. Mavrodiev, M. Gajdardziska, et al. · Thin Solid Films · 48

A comprehensive model for the I –V characteristics of metal-Ta 2 O 5 /SiO 2 -Si structures

2006 · N. Novkovski, E. Atanassova · Applied Physics A · 40

Optimization of Thin Si Oxynitride Films Produced by Rapid Thermal Processing for Applications in EEPROMs

1993 · M. Dutoit, P. Letourneau, et al. · Journal of The Electrochemical Society · 39

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Charge trapping effect at the contact between a high-work-function metal and Ta2O5 high-k dielectric

2008 · N Novkovski, A Skeparovski, et al. · Journal of Physics D Applied Physics · 36

Conduction mechanisms and reliability of thermal Ta2O5–Si structures and the effect of the gate electrode

2005 · E. Atanassova, A. Paskaleva, et al. · Journal of Applied Physics · 35

Exploring Natural Hazards: From Earthquakes, Floods, and Beyond

2025 · Vlado Spiridonov, Mladjen Ćurić, et al. · Springer eBooks · 28

Effects of the metal gate on the stress-induced traps in Ta2O5/SiO2 stacks

2007 · E. Atanassova, A. Paskaleva, et al. · Microelectronics Reliability · 28

Constant current stress of Ti-doped Ta2O5on nitrided Si

2008 · A Paskaleva, E Atanassova, et al. · Journal of Physics D Applied Physics · 26

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Origin of the optical absorption of In2O3thin films in the visible range

2008 · N Novkovski, A Tanuševski · Semiconductor Science and Technology · 26

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Dielectric properties of rf sputtered Ta2O5on rapid thermally nitrided Si

2005 · N Novkovski, A Paskaleva, et al. · Semiconductor Science and Technology · 26

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A comparative study of charge trapping in HfO2/Al2O3 and ZrO2/Al2O3 based multilayered metal/high-k/oxide/Si structures

2016 · D. Spassov, A. Skeparovski, et al. · Thin Solid Films · 24

Electrospun PEO/rGO Scaffolds: The Influence of the Concentration of rGO on Overall Properties and Cytotoxicity

2022 · Aleksandra Ivanoska-Dacikj, Petre Makreski, et al. · International Journal of Molecular Sciences · 23

Origin of the stress-induced leakage currents in Al–Ta2O5∕SiO2–Si structures

2005 · N. Novkovski, E. Atanassova · Applied Physics Letters · 23

Modification of the Terman method for determination of interface states in metal–insulator–semiconductor structures

2017 · N Novkovski · Journal of Physics Communications · 21

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Injection of holes from the silicon substrate in Ta2O5 films grown on silicon

2004 · N. Novkovski, E. Atanassova · Applied Physics Letters · 20

Electrical behaviour of Ti-doped Ta2O5on N2O- and NH3-nitrided Si

2009 · D Spassov, E Atanassova, et al. · Semiconductor Science and Technology · 18

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Dielectric breakdown in thin Si oxynitride films produced by rapid thermal processing

1990 · N. Novkovski, M. Dutoit, et al. · Applied Physics Letters · 17

Frequency Dependence of C-V Characteristics of MOS Capacitors Containing Nanosized High-κ Ta2O5 Dielectrics

2017 · Nenad Novkovski, Elena Atanassova · Advances in Materials Science and Engineering · 14

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Atmospheric Perspectives: Unveiling Earth's Environmental Challenges

2025 · Vlado Spiridonov, Mladjen Ćurić, et al. · Springer eBooks · 13

Frequency dependence of the effective series capacitance of metal–Ta2O5/SiO2–Si structures

2007 · N Novkovski, E Atanassova · Semiconductor Science and Technology · 13

Thin SiO2 films nitrided by rapid thermal processing in NH3 or N2O for applications in EEPROMs

1994 · M. Dutoit, D. Bouvet, et al. · Microelectronics Journal · 13

Conduction and charge analysis of metal (Al, W and Au)–Ta2O5/SiO2–Si structures

2006 · N Novkovski · Semiconductor Science and Technology · 12

Dielectric properties of Ta2O5 films grown on silicon substrates plasma nitrided in N2O

2004 · N. Novkovski, E. Atanassova · Applied Physics A · 12

Energy consumption and hidden economy in Macedonia: Causes and responses

2017 · B. Novkovska, N. Novkovski · Journal of Policy Modeling · 11

Works count: 107

Citation count: 851

H-index: 17

I10-index: 30